2SK3685-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Symbol Ratings V DS 500 VDSX 500 ID ±19 ID(puls] ±76 VGS ±30 IAS 19 Unit V V A A V A EAS mJ Operating and storage temperature range 245.3 dV DS/dt dV/dt PD Tch Tstg 20 5 2.50 235 +150 -55 to +150 kV/s kV/µs W Remarks VGS=-30V Equivalent circuit schematic Tch< =150°C L=1.25mH VCC =50V *2 VDS< =500V *3 Ta=25°C Tc=25°C Drain(D) Gate(G) Source(S) °C °C *2 See to Avalanche Energy Graph *3 IF < = 150°C = -ID, -di/dt=50A/µs, VCC < = BVDSS, Tch < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=9.5A VGS=10V Typ. 500 3.0 5.0 25 250 100 0.38 Tch=25°C Tch=125°C ID=9.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=9.5A VGS=10V RGS=10 Ω V CC =250V ID=19A VGS=10V L=1.25mH Tch=25°C IF=19A VGS=0V Tch=25°C IF=19A VGS=0V -di/dt=100A/µs Tch=25°C Max. 10 0.29 7.5 15 1560 2340 230 345 8 12 29 43.5 13 19.5 56 84 8 12 34 51 13 19.5 10 15 19 1.20 1.50 0.57 7.0 Units V V µA nA Ω S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.532 50.0 Units °C/W °C/W 1 2SK3685-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 ° C 400 50 40 300 20V 10V 8V ID [A] PD [W] 30 200 7V 20 100 6.5V 10 VGS=6.0V 0 0 0 25 50 75 100 125 150 0 4 8 12 VDS [V] Tc [°C] 16 20 24 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 100 100 10 gfs [S] ID[A] 10 1 1 0.1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 100 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=9.5A,VGS=10V 1.0 VGS=6V 6.5V 0.9 0.9 7V 0.8 0.8 0.7 0.7 0.6 8V 0.5 RDS(on) [ Ω ] RDS(on) [ Ω ] 10 ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 1.0 1 10V 20V 0.4 0.6 0.5 max. 0.4 typ. 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 0 10 20 ID [A] 30 40 -50 -25 0 25 50 Tch [°C] 75 100 125 150 2 2SK3685-01 FUJI POWER MOSFET Typical Gate Charge Characteristics VGS=f(Qg):ID=19A,Tch=25 °C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA 14 7.0 6.5 12 6.0 Vcc= 100V 5.5 250V 4.5 400V 8 4.0 VGS [V] VGS(th) [V] 10 max. 5.0 3.5 min. 3.0 6 2.5 4 2.0 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 Tch [°C] 100 125 150 0 10 10 3 20 30 40 50 60 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 4 10 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C 100 Ciss 10 IF [A] C [pF] 10 2 Coss 1 10 1 Crss 10 0 10 0 10 1 10 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 3 VDS [V] 10 VSD [V] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=19A Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 3 700 IAS=8A 600 500 10 2 td(off) IAS=12A EAV [mJ] 400 t [ns] td(on) 300 IAS=19A 10 1 200 tf tr 100 10 0 0 10 -1 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3685-01 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25° C,Vcc=50V 2 Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 1 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4