2SK3914-01 FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof TO-220AB Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR Ratings 450 450 6 ±24 ±30 6 Unit V V A A V A 320 mJ Note *2 mJ kV/μs kV/μs W W °C °C Note *3 VDS < = 450V Note *4 EAS dV DS /dt dV/dt PD Tch Tstg 9 20 5 2.02 90 +150 -55 to +150 Remarks VGS=-30V Note *1 Equivalent circuit schematic Drain(D) Ta=25°C Tc=25°C Gate(G) Note *1 Tch< =150°C Note *2 Starting Tch=25°C, IAS=2.4A, L=102mH, VCC=45V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. < Note *4 IF < = -ID, -di/dt=50A/μs, Vcc < = BVDSS, Tch = 150°C Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Min. Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=450V VGS=0V VDS=360V VGS=0V VGS=±30V VDS=0V ID=3A VGS=10V Typ. 450 3.0 Tch=25°C Tch=125°C ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=3A VGS=10V 2.5 RGS=10 Ω V CC =225V ID=6A VGS=10V IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/μs Tch=25°C 0.98 5 440 67 2.8 12 6.5 25 5.5 15.5 6.8 3.7 1.00 300 2.0 Max. 5.0 25 2.0 100 1.20 660 100 4.5 18 10 38 8.5 23.5 10.5 5.5 1.50 Units V V μA mA nA Ω S pF ns nC V ns μC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.389 62.0 Units °C/W °C/W 1 2SK3914-01 FUJI POWER MOSFET Characteristics 100 Allowable Power Dissipation PD=f(Tc) 12 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C 20V 10V 8.0V 10 80 7.0V 8 ID [A] PD [W] 60 6 6.5V 40 4 6.0V 20 2 VGS=5.5V 0 0 25 50 75 100 125 0 150 0 2 4 6 8 10 12 14 16 18 20 22 VDS [V] Tc [°C] Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 10 gfs [S] ID[A] 10 1 1 0.1 0.01 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0.1 8.0 0.1 1 VGS[V] 3.0 2.5 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25°C VGS=5.5V 6.0V 10 ID [A] 6.5V 3.5 7.0V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V 3.0 8V 10V 20V 1.5 RDS(on) [ Ω ] RDS(on) [ Ω ] 2.5 2.0 2.0 max. 1.5 typ. 1.0 1.0 0.5 0.0 0.5 0 2 4 6 ID [A] 8 10 12 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3914-01 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 20 6.5 Typical Gate Charge Characteristics VGS=f(Qg):ID=3A,Tch=25°C 18 6.0 16 max. 5.0 14 4.5 Vcc= 90V 12 4.0 VGS [V] VGS(th) [V] 5.5 3.5 min. 3.0 225V 360V 10 8 2.5 2.0 6 1.5 4 1.0 2 0.5 0.0 -50 -25 0 25 50 75 100 125 0 150 0 5 10 15 Tch [°C] 10n 20 25 30 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25 °C 1n 10 IF [A] C [F] Ciss 100p Coss 1 10p Crss 1p -1 10 0 1 10 2 10 10 0.1 0.00 3 10 0.25 0.50 0.75 VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 500 1.25 1.50 1.75 2.00 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V 400 tf 2 10 1.00 VSD [V] IAS=2.4A 1 10 300 EAS [mJ] t [ns] td(off) td(on) IAS=3.6A 200 IAS=6A tr 100 0 10 0 -1 10 10 0 10 ID [A] 1 10 2 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3914-01 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=45V 2 Avalanche Current I AV [A] 10 1 10 Single Pulse 0 10 -1 10 -2 10 -8 10 -7 10 10 -6 -5 10 10 -4 -3 10 -2 10 tAV [sec] 1 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 o Zth(ch-c) [ C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4