FAIRCHILD FGH20N60UFDTU

FGH20N60UFD
600 V, 20 A Field Stop IGBT
Features
General Description
• High Current Capability
Using novel field stop IGBT technology, Fairchild®’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching losses are essential.
• Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 20 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
IF
IFM (1)
PD
Ratings
Unit
600
V
 20
V
Collector Current
@ TC = 25oC
40
A
Collector Current
@ TC = 100oC
20
A
60
A
Pulsed Collector Current
o
@ TC = 25 C
o
Diode Forward Current
@ TC = 25 C
20
A
Diode Forward Current
o
10
A
60
A
W
@ TC = 100 C
Pulsed Diode Maximum Forward Current
o
Maximum Power Dissipation
@ TC = 25 C
165
Maximum Power Dissipation
@ TC = 100oC
66
W
TJ
Operating Junction Temperature
-55 to +150
o
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
1
www.fairchildsemi.com
FGH20N60UFD 600 V, 20 A Field Stop IGBT
April 2013
Device Marking
Device
Package
Packaging
Type
FGH20N60UFD
FGH20N60UFDTU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
BVCES
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
-
0.6
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
A
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250A, VCE = VGE
4.0
5.0
6.5
V
IC = 20A, VGE = 15V
-
1.8
2.4
V
IC = 20A, VGE = 15V,
TC = 125oC
-
2.0
-
V
-
940
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
110
-
pF
-
40
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
13
-
ns
tr
Rise Time
-
17
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 400V, IC = 20A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
-
87
-
ns
-
32
64
ns
-
0.38
-
mJ
-
0.26
-
mJ
Ets
Total Switching Loss
-
0.64
-
mJ
td(on)
Turn-On Delay Time
-
13
-
ns
tr
Rise Time
-
16
-
ns
td(off)
Turn-Off Delay Time
-
92
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
0.36
-
mJ
Ets
Total Switching Loss
-
0.77
-
mJ
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
VCC = 400V, IC = 20A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 20A,
VGE = 15V
2
-
63
-
ns
-
0.41
-
mJ
-
63
-
nC
-
7
-
nC
-
32
-
nC
www.fairchildsemi.com
FGH20N60UFD 600 V, 20 A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Parameter
Typ.
Max.
Unit
RJC(IGBT)
Thermal Resistance, Junction to Case
-
0.76
oC/W
RJC(Diode)
Thermal Resistance, Junction to Case
-
2.51
o
RJA
Thermal Resistance, Junction to Ambient
-
40
Electrical Characteristics of the Diode
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
o
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
IF = 10A
IES =10A, dIES/dt = 200A/s
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
C/W
oC/W
3
Min.
Typ.
Max
TC = 25 C
-
1.9
2.5
TC = 125oC
-
1.7
-
TC = 25oC
-
34
-
TC = 125oC
-
57
-
TC = 25oC
-
41
-
TC = 125oC
-
96
-
Unit
V
ns
nC
www.fairchildsemi.com
FGH20N60UFD 600 V, 20 A Field Stop IGBT
Thermal Characteristics
Figure 1. Typical Output Characteristics
60
Figure 2. Typical Output Characteristics
60
o
TC = 25 C
20V
o
TC = 125 C
20V
12V
Collector Current, IC [A]
Collector Current, IC [A]
10V
40
20
VGE = 8V
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
20
VGE = 8V
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
6.0
Figure 4. Transfer Characteristics
60
60
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
10V
40
0
0.0
6.0
Figure 3. Typical Saturation Voltage
Characteristics
o
TC = 125 C
40
20
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
40
20
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
3.2
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
VGE = 15V
2.8
40A
2.4
2.0
20A
1.6
IC = 10A
1.2
TC = 25 C
0
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
12V
15V
15V
Common Emitter
o
TC = -40 C
16
12
8
40A
4
20A
IC = 10A
0.8
25
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
4
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGH20N60UFD 600 V, 20 A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
20
Common Emitter
Common Emitter
o
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 8. Saturation Voltage vs. VGE
16
12
8
40A
4
20A
IC = 10A
0
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 125 C
16
12
8
20A
4
40A
IC = 10A
0
20
0
Figure 9. Capacitance Characteristics
20
Figure 10. Gate charge Characteristics
2500
15
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
Gate-Emitter Voltage, VGE [V]
o
o
2000
Capacitance [pF]
4
8
12
16
Gate-Emitter Voltage, VGE [V]
TC = 25 C
Cies
1500
1000
Coes
Cres
500
0
0.1
1
10
Collector-Emitter Voltage, VCE [V]
TC = 25 C
12
300V
VCC = 100V
9
200V
6
3
0
30
0
Figure 11. SOA Characteristics
20
40
60
Gate Charge, Qg [nC]
80
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
100
100s
10
Switching Time [ns]
Collector Current, Ic [A]
10s
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
tr
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
o
TC = 25 C
o
TC = 125 C
5
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
0
1000
5
10
20
30
40
Gate Resistance, RG []
50
60
www.fairchildsemi.com
FGH20N60UFD 600 V, 20 A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
1000
200
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
100
o
TC = 25 C
o
o
o
TC = 125 C
Switching Time [ns]
Switching Time [ns]
TC = 25 C
td(off)
100
tf
10
0
10
20
30
40
50
TC = 125 C
tr
td(on)
10
3
60
0
10
Gate Resistance, RG []
Figure 15. Turn-off Characteristics vs.
Collector Current
30
40
Figure 16. Switching Loss vs.
Gate Resistance
3
300
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
o
IC = 20A
TC = 25 C
o
o
Switching Loss [mJ]
TC = 125 C
Switching Time [ns]
20
Collector Current, IC [A]
td(off)
100
tf
10
0
10
20
30
o
TC = 125 C
0
Collector Current, IC [A]
Figure17. Switching Loss vs.
Collector Current
Eon
Eoff
0.1
40
TC = 25 C
1
10
20
30
40
Gate Resistance, RG []
50
60
Figure18. Turn off Switching
SOA Characteristics
10
100
Common Emitter
VGE = 15V, RG = 10
o
o
Collector Current, IC [A]
Switching Loss [mJ]
TC = 25 C
Eon
TC = 125 C
1
Eoff
0.1
10
Safe Operating Area
o
0.02
0
10
20
30
40
1
Collector Current, IC [A]
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
VGE = 15V, TC = 125 C
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
FGH20N60UFD 600 V, 20 A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
100
40
o
o
10
o
TJ = 75 C
10
Reverse Current , IR [A]
Forward Current, IF [A]
TJ = 125 C
o
TJ = 25 C
1
o
TC = 25 C
o
TC = 125 C
1
o
TC = 75 C
0.1
o
TC = 25 C
0.01
TC = 75 C
o
TC = 125 C
1E-3
0.1
0
1
2
3
Forward Voltage, VF [V]
0
4
Figure 21. Stored Charge
200
300
400
Reverse Voltage, VR [V]
500
600
Figure 22. Reverse Recovery Time
60
Reverse Recovery Time, trr [ns]
0.05
Stored Recovery Charge, Qrr [nC]
100
200A/s
0.04
0.03
di/dt = 100A/s
0.02
50
di/dt = 100A/s
40
200A/s
30
20
10
0.01
0
5
10
15
0
20
5
10
15
20
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
7
www.fairchildsemi.com
FGH20N60UFD 600 V, 20 A Field Stop IGBT
Typical Performance Characteristics
FGH20N60UFD 600 V, 20 A Field Stop IGBT
Mechanical Dimensions
TO-247A03
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2008 Fairchild Semiconductor Corporation
FGH20N60UFD Rev. C0
9
www.fairchildsemi.com
FGH20N60UFD 600 V, 20 A Field Stop IGBT
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