FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A • High input impedance • Fast switching • Qualified to Automotive Requirements of AEC-Q101 • RoHS complaint Applications • Inverters, SMPS, PFC, UPS • Automotive Auxiliaries Chargers, Converters, High Voltage C C G D2-PAK G E E Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V 40 A 20 A o 60 A o IC ICM (1) IF 25oC Collector Current @ TC = Collector Current @ TC = 100oC Pulsed Collector Current @ TC = 25 C Diode Forward Current @ TC = 25 C 20 A Diode Forward Current @ TC = 100oC 10 A 60 A Maximum Power Dissipation @ TC = 25oC 208 W Maximum Power Dissipation @ TC = 100oC Pulsed Diode Maximum Forward Current IFM(1) PD Operating Junction Temperature TJ Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 83 W -55 to +150 o C -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings Units RθJC(IGBT) ( 2) Thermal Resistance, Junction to Case 0.6 o RθJC(Diode) Thermal Resistance, Junction to Case 2.6 oC/W Typ. Units 75 oC/W Symbol RθJA Parameter Thermal Resistance, Junction to Ambient (PCB Mount)(2) ©2013 Fairchild Semiconductor Corporation FGB20N60SFD_F085 Rev. C1 1 C/W www.fairchildsemi.com FGB20N60SFD_F085 600V, 20A Field Stop IGBT October 2013 Device Marking Device Package Packaging Type FGB20N60SFD FGB20N60SFD_F085 TO-263 Tube Electrical Characteristics of the IGBT Symbol Parameter Max Qty Qty per Tube per Box 50ea - TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250μA - 0.79 - ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 ICES at 80%*BVCES, 150oC - - 250 VGE = VGES, VCE = 0V - - ±400 nA IC = 250μA, VCE = VGE IGES G-E Leakage Current μA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 4.8 6.5 V IC = 20A, VGE = 15V - 2.2 2.85 V IC = 20A, VGE = 15V, TC = 125oC - 2.4 - V - 940 1250 pF VCE = 30V, VGE = 0V, f = 1MHz - 110 146 pF - 40 53 pF 13 ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time - 10 tr Rise Time - 16 21 ns td(off) Turn-Off Delay Time - 90 120 ns tf Fall Time Eon Turn-On Switching Loss VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25oC - 24 36 ns - 0.31 0.41 mJ Eoff Turn-Off Switching Loss - 0.13 0.21 mJ Ets Total Switching Loss - 0.44 0.59 mJ td(on) Turn-On Delay Time - 12 16 ns tr Rise Time - 16 21 ns td(off) Turn-Off Delay Time - 95 126 ns tf Fall Time - 28 43 ns Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 400V, IC = 20A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125oC - 0.45 0.60 mJ - 0.21 0.38 mJ Ets Total Switching Loss - 0.66 0.88 mJ Qg Total Gate Charge - 63 95 nC Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2013 Fairchild Semiconductor Corporation FGB20N60SFD_F085 Rev. C1 VCE = 400V, IC = 20A, VGE = 15V 2 - 7 11 nC - 32 48 nC www.fairchildsemi.com FGB20N60SFD_F085 600V, 20A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max o - 1.9 2.5 125oC - 1.7 - TC = 25oC - 111 - o TC = 125 C - 204 - TC = 25oC - 174 244 - 463 - TC = 25 C IF = 10A TC = IES = 10A, dIES/dt = 200A/μs TC = 125oC Units V ns nC Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature 2:Rthjc for D2-PAK: according to Mil standard 883-1012 test method. Rthja for D2-PAK: according to JESD51-2, test method environmental condition and JESD51-3,low effective thermal conductivity test board for leaded surface mount package. thermal measurements. JESD51-2: Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air). ©2013 Fairchild Semiconductor Corporation FGB20N60SFD_F085 Rev. C1 3 www.fairchildsemi.com FGB20N60SFD_F085 600V, 20A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 60 o Collector Current, IC [A] T C = 25 C 20V 10V 40 20 VGE = 8V 0 0.0 o T C = 125 C 15V 12V Collector Current, IC [A] 60 Figure 2. Typical Output Characteristics 1.5 3.0 4.5 Collector-Emitter Voltage, V CE [V] Figure 3. Typical Saturation Voltage Characteristics 40 20 VGE = 8V Common Emitter VCE = 20V Collector Current, IC [A] Collector Current, IC [A] T C = 25oC o T C = 125 C 40 20 o TC = 25 C o 1 2 3 4 Collector-Emitter Voltage, VCE [V] 20 5 40A 20A 2 IC = 10A 1 25 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2013 Fairchild Semiconductor Corporation 2 4 6 8 10 Gate-Emitter Voltage,V GE [V] 20 3 FGB20N60SFD_F085 Rev. C1 0 12 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, V CE [V] Common Emitter VGE = 15V TC = 125 C 40 0 0 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 6.0 60 Common Emitter VGE = 15V 4 1.5 3.0 4.5 Collector-Emitter Voltage, V CE [V] Figure 4. Transfer Characteristics 60 0 15V 12V 10V 0 0.0 6.0 20V o T C = -40 C 16 12 8 IC = 10A 40A 4 20A 0 4 Common Emitter 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGB20N60SFD_F085 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter o T C = 25 C 16 12 8 IC = 10A 4 40A 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] T C = 125 C 16 12 8 IC = 10A 4 0 20 Figure 9. Capacitance Characteristics 0 4 8 12 16 Gate-Emitter Voltage, V GE [V] 20 Figure 10. Gate charge Characteristics Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] Cies 2000 o TC = 25 C 1500 1000 C oes 500 Cres 0 0.1 TC = 25 C 12 300V VCC = 100V 9 200V 6 3 0 1 10 Collector-Emitter Voltage, V CE [V] 30 Figure 11. SOA Characteristics 0 20 40 60 Gate Charge, Qg [nC] 80 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 100 10μs Common Emitter VCC = 600V, VGE = 15V IC = 20A 100μs 10 1ms o Switching Time [ns] Collector Current, Ic [A] 40A 20A 15 2500 Capacitance [pF] Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, V CE [V] 20 Figure 8. Saturation Voltage vs. VGE 10 ms DC 1 *Notes: 0.1 o 1. T C = 25 C TC = 25 C o TC = 125 C tr td(on) 10 o 0.01 2. T J = 150 C 3. Single Pulse 1 10 100 Collector-Emitter Voltage, V CE [V] ©2013 Fairchild Semiconductor Corporation FGB20N60SFD_F085 Rev. C1 1000 0 5 10 20 30 40 Gate Resistance, RG [Ω] 50 www.fairchildsemi.com FGB20N60SFD_F085 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance 1000 Figure 14. Turn-on Characteristics vs. Collector Current 100 Common Emitter VCC = 600V, VGE = 15V I C = 20A Common Emitter VGE = 15V, RG = 10Ω o TC = 25 C o T C = 25 C Switching Time [ns] Switching Time [ns] o T C = 125 C td(off) 100 tf 10 0 10 20 30 40 50 TC = 125oC tr 10 td(on) 60 0 10 Gate Resistance, RG [Ω] Figure 15. Turn-off Characteristics vs. Collector Current 500 30 40 Figure 16. Switching Loss vs. Gate Resistance 3 Common Emitter VGE = 15V, RG = 10Ω Common Emitter VCC = 600V, VGE = 15V TC = 25oC IC = 20A o Switching Loss [mJ] TC = 125 C Switching Time [ns] 20 Collector Current, IC [A] td(off) 100 tf TC = 25oC 1 o TC = 125 C Eon Eoff 10 0 10 20 30 0.1 40 0 Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current 10 20 30 40 Gate Resistance, RG [Ω] 50 60 Figure 18. Turn off Switching SOA Characteristics 10 100 Common Emitter VGE = 15V, RG = 10Ω o o Eon TC = 125 C 1 Collector Current, IC [A] Switching Loss [mJ] TC = 25 C 0.1 Eoff 10 Safe Operating Area 0.01 0 10 20 30 1 40 Collector Current, IC [A] ©2013 Fairchild Semiconductor Corporation FGB20N60SFD_F085 Rev. C1 VGE = 15V, TC = 125oC 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 6 www.fairchildsemi.com FGB20N60SFD_F085 600V, 20A Field Stop IGBT Typical Performance Characteristics Figure 20. Typical Reverse Current vs. Reverse Voltage 40 100 10 10 Reverse Current, IR [uA] Forward Current, IF [A] Figure 19. Forward Characteristics o T J = 125 C o T J = 75 C 1 TJ = 25oC 0.1 0 1 2 3 Forward Voltage, V F [V] TJ = 75oC 0.1 1E-3 4 o TJ = 25 C 0 100 200 300 400 500 Reverse Voltage, VR [V] 600 Figure 22. Reverse Recovery Time 150 Reverse Recovery Time, trr [ns] 250 Stored Recovery Charge, Qrr [nC] 1 0.01 Figure 21. Stored Charge 200 200A/μs 150 100 di/dt = 100A/ μs 50 0 o TJ = 125 C 0 5 10 15 120 di/dt = 100A/ μ s 90 200A/ μs 60 30 0 20 5 10 15 20 Forward Current, IF [A] Forward Current, IF [A] Figure 23.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 single pulse 0.01 1E-5 1E-4 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] ©2013 Fairchild Semiconductor Corporation FGB20N60SFD_F085 Rev. C1 7 www.fairchildsemi.com FGB20N60SFD_F085 600V, 20A Field Stop IGBT Typical Performance Characteristics FGB20N60SFD_F085 600V, 20A Field Stop IGBT Mechanical Dimensions D2PAK Dimensions in Millimeters ©2013 Fairchild Semiconductor Corporation FGB20N60SFD_F085 Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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