FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT Features General Description • High Current Capability Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. • Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant • Qualified to Automotive Requirements of AEC-Q101 Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Inverters, PFC, UPS E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC Unit 650 V ± 20 V 80 A 40 A Pulsed Collector Current @ TC = 25oC 120 A Maximum Power Dissipation @ TC = 25oC 290 W Maximum Power Dissipation @ TC = Operating Junction Temperature TJ Ratings Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 100oC 116 W -55 to +150 o C -55 to +150 o C 300 oC Typ Unit Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter RθJC(IGBT) Thermal Resistance, Junction to Case 0.43 o C/W RθJC(Diode) Thermal Resistance, Junction to Case 1.45 o C/W RθJA Thermal Resistance, Junction to Ambient ©2015 Fairchild Semiconductor Corporation FGH40N65UFD_F085 Rev 1.0 40 1 oC/W www.fairchildsemi.com FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT April 2015 Part Number Top Mark FGH40N65UFDTU_F085 FGH40N65UFD Package Packing Method Reel Size Tape Width TO-247 Electrical Characteristics of the IGBT Symbol Parameter Tube N/A Quantity N/A 30 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 650 - - V - 0.6 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA ΔBVCES ΔTJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 μA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 μA, VCE = VGE VGE = 0 V, IC = 250 μA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.0 5.2 6.5 V IC = 40 A, VGE = 15 V - 1.8 2.4 V IC = 40 A, VGE = 15 V, TC = 125oC - 2.0 - V - 1860 - pF VCE = 30 V, VGE = 0 V, f = 1 MHz - 200 - pF - 65 - pF - 23 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 35 - ns td(off) Turn-Off Delay Time - 126 - ns tf Fall Time - 26 60 ns Eon Turn-On Switching Loss - 1.28 - mJ Eoff Turn-Off Switching Loss - 0.50 - mJ Ets Total Switching Loss - 1.78 - mJ td(on) Turn-On Delay Time - 21 - ns tr Rise Time - 39 - ns td(off) Turn-Off Delay Time - 131 - ns tf Fall Time - 72 - ns Eon Turn-On Switching Loss - 1.62 - mJ Eoff Turn-Off Switching Loss - 0.79 - mJ VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25oC VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125oC Ets Total Switching Loss - 2.41 - mJ Qg Total Gate Charge - 119 - nC Qge Gate to Emitter Charge - 14 - nC Qgc Gate to Collector Charge - 64 - nC ©2015 Fairchild Semiconductor Corporation FGH40N65UFD_F085 Rev 1.0 VCE = 400 V, IC = 40 A, VGE = 15 V 2 www.fairchildsemi.com FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions FGH40N65UFD_F085 Rev 1.0 Typ. Max - 1.80 2.6 125oC - 1.71 - TC = 25oC - 65 - o TC = 125 C - 215 - TC = 25oC - 145 - - 775 - TC = 25 C IF = 20 A TC = IF =20 A, diF/dt = 200 A/μs ©2015 Fairchild Semiconductor Corporation Min. o TC = 3 125oC Unit V ns nC www.fairchildsemi.com FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT Electrical Characteristics of the Diode Figure 1. Typical Output Characteristics 120 Figure 2. Typical Output Characteristics 120 o TC = 25 C 20V 15V 100 Collector Current, IC [A] Collector Current, IC [A] 100 80 60 10V 40 20 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 12V 10V 60 40 VGE = 8V 0 0.0 6.0 1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V] 6.0 Figure 4. Transfer Characteristics 120 120 Common Emitter VGE = 15V 100 o Collector Current, IC [A] Collector Current, IC [A] 15V 20 Figure 3. Typical Saturation Voltage Characteristics TC = 25 C o TC = 125 C 80 60 40 Common Emitter VCE = 20V 100 o TC = 25 C o TC = 125 C 80 60 40 20 20 0 0 1 2 3 Collector-Emitter Voltage, VCE [V] 4 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 80A 2.5 40A 2.0 IC = 20A 1.5 1.0 0.5 25 FGH40N65UFD_F085 Rev 1.0 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 4 Common Emitter o TC = -40 C 16 12 8 80A 4 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] ©2015 Fairchild Semiconductor Corporation 2 20 Common Emitter VGE = 15V 3.0 0 Figure 6. Saturation Voltage vs. VGE Collector-Emitter Voltage, VCE [V] 3.5 Collector-Emitter Voltage, VCE [V] 20V 80 VGE = 8V 0 0.0 0 o TC = 125 C 12V 40A IC = 20A 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter o TC = 25 C 16 12 8 80A 4 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 80A 40A 4 IC = 20A 0 20 Figure 9. Capacitance Characteristics 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 10. Gate charge Characteristics 15 5000 Common Emitter Common Emitter VGE = 0V, f = 1MHz Gate-Emitter Voltage, VGE [V] o o 4000 Capacitance [pF] Common Emitter o Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE TC = 25 C Cies 3000 Coes 2000 1000 Cres 0 0.1 TC = 25 C 12 200V VCC = 100V 9 6 3 0 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 11. SOA Characteristics 300V 0 50 100 Gate Charge, Qg [nC] 150 Figure 12. Turn-on Characteristics vs. Gate Resistance 400 200 100μs 10 10μs 100 Switching Time [ns] Collector Current, Ic [A] 100 1ms 10 ms DC 1 *Notes: Single Nonrepetitive O Pulse T C= 25 C 0.1 tr td(on) o TC = 25 C Curves must be derated linearly with increase in temperature 0.01 1 10 100 Collector-Emitter Voltage, V CE [V] ©2015 Fairchild Semiconductor Corporation FGH40N65UFD_F085 Rev 1.0 Common Emitter VCC = 400V, VGE = 15V IC = 40A o TC = 125 C 10 1000 5 0 10 20 30 40 Gate Resistance, RG [Ω] 50 www.fairchildsemi.com FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 500 5500 Common Emitter Common Emitter VGE = 15V, RG = 10Ω VCC = 400V, VGE = 15V IC = 40A o TC = 25 C o TC = 25 C o o TC = 125 C td(off) 100 10 Switching Time [ns] Switching Time [ns] 1000 tf 0 10 20 30 40 TC = 125 C td(on) 10 20 50 40 Figure 15. Turn-off Characteristics vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance Common Emitter VCC = 400V, VGE = 15V Common Emitter VGE = 15V, RG = 10Ω o IC = 40A TC = 25 C o o TC = 125 C td(off) Switching Loss [mJ] Switching Time [ns] 80 10 600 100 tf TC = 25 C 40 60 Collector Current, IC [A] 1 Eoff 80 Figure 17. Switching Loss vs. Collector Current Eon o TC = 125 C 0.3 10 20 10 60 Collector Current, IC [A] Gate Resistance, RG [Ω] 20 tr 100 0 10 20 30 40 Gate Resistance, RG [Ω] 50 Figure 18. Turn off Switching SOA Characteristics 200 Common Emitter VGE = 15V, RG = 10Ω 100 o Eon o TC = 125 C Collector Current, IC [A] Switching Loss [mJ] TC = 25 C 1 Eoff 10 Safe Operating Area o 0.1 20 30 40 50 60 70 1 80 Collector Current, IC [A] ©2015 Fairchild Semiconductor Corporation FGH40N65UFD_F085 Rev 1.0 6 VGE = 15V, TC = 125 C 1 10 100 Collector-Emitter Voltage, VCE [V] 1000 www.fairchildsemi.com FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT Typical Performance Characteristics Figure 19. Forward Characteristics Figure 20. Reverse Current 200 100 80 o TJ = 125 C o Reverse Currnet, IR [uA] Forward Current, IF [A] TJ = 125 C 10 o TJ = 25 C o TJ = 75 C 1 o TC = 25 C 10 o TJ = 75 C 1 o TJ = 25 C 0.1 o TC = 125 C o 0.1 TC = 75 C 0 1 2 3 Forward Voltage, VF [V] 0.01 50 4 Figure 21. Stored Charge 600 90 200A/μs Reverse Recovery Time, trr [ns] Stored Recovery Charge, Qrr [nC] 300 450 Reverse Voltage, VR [V] Figure 22. Reverse Recovery Time 200 150 100 di/dt = 100A/μs 50 0 150 5 10 20 30 Forward Current, IF [A] 200A/μs 30 40 di/dt = 100A/μs 60 5 10 20 30 Forward Current, IF [A] 40 Figure 23. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.01 PDM t1 single pulse 0.001 -5 10 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 -2 10 10 -1 10 1 10 Rectangular Pulse Duration [sec] ©2015 Fairchild Semiconductor Corporation FGH40N65UFD_F085 Rev 1.0 7 www.fairchildsemi.com FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT Typical Performance Characteristics FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT Mechanical Dimensions Figure 24. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2015 Fairchild Semiconductor Corporation FGH40N65UFD_F085 Rev 1.0 8 www.fairchildsemi.com AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm Power Supply WebDesigner™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® ® TinyBuck TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I74 ©2015 Fairchild Semiconductor Corporation FGH40N65UFD_F085 Rev 1.0 9 www.fairchildsemi.com FGH40N65UFD_F085 650 V, 40 A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.