FGH15T120SMD 1200 V, 15 A Field Stop Trench IGBT Features General Description • FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 15 A • 100% of The Parts Tested for ILM(1) • High Input Impedance • RoHS Compliant Applications • Solar Inverter, Welder, UPS & PFC Applications. E C C G G COLLECTOR (FLANGE) Absolute Maximum Ratings T C Symbol VCES VGES IC E = 25°C unless otherwise noted Ratings Unit Collector to Emitter Voltage Description 1200 V Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V Collector Current @ TC = 25oC 30 A Collector Current @ TC = 100oC 15 A 25oC 60 A 60 A o A A ILM (1) Clamped Inductive Load Current ICM (2) Pulsed Collector Current IF Diode Continuous Forward Current @ TC = 25 C 30 Diode Continuous Forward Current @ TC = 100oC 15 IFM PD @ TC = Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100oC 100 A 333 W 167 W TJ Operating Junction Temperature -55 to +175 o C Tstg Storage Temperature Range -55 to +175 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case -- 0.45 o C/W RθJC(Diode) Thermal Resistance, Junction to Case -- 2.0 o C/W 40 oC/W RθJA Thermal Resistance, Junction to Ambient -- Notes: 1. Vcc = 600 V,VGE = 15 V, IC = 60 A, RG =34 Ω , Inductive Load 2. Limited by Tjmax ©2013 Fairchild Semiconductor Corporation FGH15T120SMD Rev. C1 1 www.fairchildsemi.com FGH15T120SMD — 1200 V, 15 A Field Stop Trench IGBT September 2013 Device Marking Device Package Reel Size Tape Width Quantity FGH15T120SMD FGH15T120SMD_F155 TO-247G03 - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1200 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 15 mA, VCE = VGE On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 4.9 6.2 7.5 V IC = 15 A, VGE = 15 V TC = 25oC - 1.8 2.4 V IC = 15 A, VGE = 15 V, TC = 175oC - 1.9 - V - 1460 - pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1MHz - 65 - pF - 37 - pF Switching Characteristics td(on) Turn-On Delay Time - 32 - ns tr Rise Time - 47 - ns td(off) Turn-Off Delay Time - 490 - ns tf Fall Time - 12 - ns Eon Turn-On Switching Loss - 1.15 - mJ Eoff Turn-Off Switching Loss - 0.46 - mJ VCC = 600 V, IC = 15 A, RG = 34 Ω, VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 1.61 - mJ td(on) Turn-On Delay Time - 32 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time - 510 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 0.70 - mJ Ets Total Switching Loss - 2.56 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2013 Fairchild Semiconductor Corporation FGH15T120SMD Rev. C1 VCC = 600 V, IC = 15 A, RG = 34 Ω, VGE = 15 V, Inductive Load, TC = 175oC VCE = 600 V, IC = 15 A, VGE = 15 V 2 - 24 - ns - 1.86 - mJ - 128 - nC - 11 - nC - 70 - nC www.fairchildsemi.com FGH15T120SMD — 1200 V, 15 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol VFM Parameter Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge Erec Reverse Recovery Energy trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge ©2013 Fairchild Semiconductor Corporation FGH15T120SMD Rev. C1 TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 25oC - 2.8 3.7 V o IF = 15 A, TC = 175 C - 2.3 - V VR = 600 V, IF = 15 A, diF/dt = 200 A/us, TC = 25oC - 72 - ns - 7.4 - A - 270 - nC IF = 15 A, TC = VR = 600 V, IF = 15 A, diF/dt = 200 A/us, TC = 175oC 3 - 120 - uJ - 183 - ns - 12 - A - 1085 - nC www.fairchildsemi.com FGH15T120SMD — 1200 V, 15 A Field Stop Trench IGBT Electrical Characteristics of the DIODE Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 60 60 o o TC = 175 C 48 20V 15V 20V 12V 36 10V 24 12 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 24 VGE = 8V 12 0 0.0 2.0 4.0 6.0 8.0 Collector-Emitter Voltage, VCE [V] 3.0 o 48 TC = 25 C Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V -------- o TC = 175 C 36 24 12 0 0.0 1.0 2.0 3.0 4.0 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15 V 30 A 2.5 2.0 15 A IC = 8 A 1.5 1.0 25 5.0 Figure 5. Saturation Voltage vs. VGE 50 75 100 125 150 o Case Temperature, TC [ C] 175 Figure 6. Saturation Voltage vs. VGE 20 20 Common Emitter Common Emitter o o Collector-Emitter Voltage, VCE [V] TC = 25 C 15 15A 10 IC=8A 30A 5 0 10.0 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 60 Collector Current, IC [A] 10V 10.0 Figure 3. Typical Saturation Voltage Characteristics Collector-Emitter Voltage, VCE [V] 36 VGE = 8V 0 0.0 12V 15V 48 Collector Current, IC [A] Collector Current, IC [A] TC = 25 C TC = 175 C 16 15A 12 IC=8A 30A 8 4 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] ©2013 Fairchild Semiconductor Corporation FGH15T120SMD Rev. C1 4 20 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH15T120SMD — 1200 V, 15 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics 15 10000 Common Emitter Gate-Emitter Voltage, VGE [V] o Capacitance [pF] Cies 1000 Coes 100 Common Emitter VGE = 0V, f = 1MHz Cres TC = 25 C 12 400V VCC = 200V 9 600V 6 3 o TC = 25 C 0 20 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 26 52 78 Gate Charge, Qg [nC] 104 130 Figure 10. Turn-off Characteristics vs. Gate Resistance 10000 Common Emitter VCC = 600V, VGE = 15V IC = 15A 100 1000 td(off) o Switching Time [ns] Switching Time [ns] TC = 25 C o TC = 175 C tr td(on) 100 tf 10 Common Emitter VCC = 600V, VGE = 15V IC = 15A 1 o TC = 25 C o TC = 175 C 10 0 14 28 42 Gate Resistance, RG [Ω] 56 0.1 70 Figure 11. Swithcing Loss vs. Gate Resistance 28 42 Gate Resistance, RG [Ω] 56 70 300 10 Common Emitter VCC = 600V, VGE = 15V Common Emitter VGE = 15V, RG = 34Ω IC = 15A TC = 25 C o o o TC = 25 C o Switching Time [ns] Switching Loss [mJ] 14 Figure 12. Turn-on Characteristics vs. Collector Current 20 Eon TC = 175 C 1 Eoff 0.1 0 TC = 175 C 100 tr td(on) 10 0 14 28 42 56 Gate Resistance, RG [Ω] ©2013 Fairchild Semiconductor Corporation FGH15T120SMD Rev. C1 0 70 6 12 18 24 30 Collector Current, IC [A] 5 www.fairchildsemi.com FGH15T120SMD — 1200 V, 15 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Swithcing Loss vs. Collector Current 10 1000 Common Emitter VGE = 15V, RG = 34Ω o TC = 25 C Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 34Ω Eon o TC = 175 C 1 Eoff o TC = 25 C o TC = 175 C 0.1 1 0 6 12 18 24 Collector Current, IC [A] 0 30 Figure 15. Load Current vs. Frequency 6 12 18 Collector Current, IC [A] 24 Figure 16. SOA Characteristics 200 100 150 VCE = 600V ICMAX(Pulse) 10μs Collector Current, Ic [A] Collector Current, IC [A] Load current : peak of square Wave Duty cycle : 50% 100 o Tc= 100 C Power Dissipation =167 W 50 o TC = 100 C 0 1k 30 10 ICMAX(Continuous) 100μs DC Operation 1 1ms 10ms Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature 0.1 0.01 10k 100k Switching Frequency, f [Hz] 1 1M Figure 17. Forward Characteristics 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 18. Reverse Recovery Current 20 300 Reverse Recovery Current, Irr [A] o 100 Forward Current, IF [A] o TC = 175 C 10 o TC = 25 C 1 TC = 25 C o TC = 175 C 15 diF/dt = 200A/μs 10 diF/dt = 100A/μs diF/dt = 200A/μs 5 diF/dt = 100A/μs 0 0.1 0 1 2 3 4 Forward Voltage, VF [V] ©2013 Fairchild Semiconductor Corporation FGH15T120SMD Rev. C1 5 5 6 10 15 20 Forward Current, IF [A] 25 30 www.fairchildsemi.com FGH15T120SMD — 1200 V, 15 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge 1.4 300 o o Stored Recovery Charge, Qrr [uC] Reverse Recovery Time, trr [ns] TC = 25 C o TC = 175 C 250 diF/dt = 100A/μs 200 diF/dt = 200A/μs 150 100 diF/dt = 100A/μs 5 10 15 20 Forward Current, IF [A] 25 o TC = 175 C diF/dt = 200A/μs 1.0 diF/dt = 100A/μs 0.8 0.6 0.4 diF/dt = 200A/μs 0.2 diF/dt = 100A/μs diF/dt = 200A/μs 50 TC = 25 C 1.2 0.0 30 5 10 15 20 Forwad Current, IF [A] 25 30 Figure 21. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 0.5 0.5 0.1 0.3 0.1 0.05 0.02 0.01 single pulse 0.01 PDM t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec] Figure 22. Transient Thermal Impedance of Diode Thermal Response [Zthjc] 3 0.5 1 0.3 0.1 0.05 0.1 PDM 0.02 0.01 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] ©2013 Fairchild Semiconductor Corporation FGH15T120SMD Rev. C1 7 www.fairchildsemi.com FGH15T120SMD — 1200 V, 15 A Field Stop Trench IGBT Typical Performance Characteristics FGH15T120SMD — 1200 V, 15 A Field Stop Trench IGBT Mechanical Dimensions Figure 23. TO-247,MOLDED,3 LEAD,JEDEC AB LONG LEADS (Active) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. 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