ISC 2SB863

Inchange Semiconductor
Product Specification
2SB863
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-3P(I) package
・Complement to type 2SD1148
APPLICATIONS
・Power amplifier applications
・Recommend for 70W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-140
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-10
A
IB
Base current
-1
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB863
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-5.0A ;IB=-0.5A
-0.60
-2.0
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-0.96
-1.5
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-5.0
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5.0
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
hFE-2
DC current gain
IC=-5A ; VCE=-5V
25
Transition frequency
IC=-1A ; VCE=-10V
15
MHz
Collector output capacitance
IC=0;f=1MHz ; VCB=-10V
400
pF
fT
COB
‹
CONDITIONS
hFE-1 Classifications
R
O
55-110
80-160
2
MIN
TYP.
MAX
-140
UNIT
V
160
Inchange Semiconductor
Product Specification
2SB863
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SB863
Silicon PNP Power Transistors
4