Inchange Semiconductor Product Specification 2SC5199 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A IB Base current 1.2 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC5199 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=8A; IB=0.8A 2.5 V VBE Base-emitter on voltage IC=6A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=160V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=6A ; VCE=5V 35 Transition frequency IC=1A ; VCE=5V 30 MHz Collector output capacitance f=1MHz;VCB=10V 170 pF fT COB CONDITIONS hFE-1 classifications R O 55-110 80-160 2 MIN TYP. MAX 160 UNIT V 160 Inchange Semiconductor Product Specification 2SC5199 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 Inchange Semiconductor Product Specification 2SC5199 Silicon NPN Power Transistors 4