Inchange Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SA1803 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 0.6 A PC Collector power dissipation 55 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR )CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCE(sat) Collector-emitter saturation voltage IC=5A;IB=0.5 A 2.0 V VBE Base-emitter voltage IC=3A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=3A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V 30 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 105 pF CONDITIONS hFE classifications R O 55-110 80-160 2 MIN TYP. MAX 80 UNIT V 160 Inchange Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC4688 Silicon NPN Power Transistors 4