ISC 2SD613

Inchange Semiconductor
Product Specification
2SD613
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·Complement to type 2SB633
·High breakdown voltage :VCEO=85V
·High current 6A
APPLICATIONS
·Recommend for 25-35W high fidelity
audio frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
85
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD613
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; RBE=∞
85
V
V(BR)CBO
Collector-base breakdown voltage
IC=5mA; IE=0
100
V
V(BR)EBO
Emitter-base breakdown votage
IE=5mA; IC=0
6
V
Collector-emitter saturation voltage
IC=4A;IB=0.4 A
2.0
V
VBE
Base-emitter voltage
IC=1A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
40
hFE-2
DC current gain
IC=3A ; VCE=5V
20
fT
Transition frequency
IC=1A ; VCE=5V
15
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
110
pF
VCEsat
‹
CONDITIONS
hFE-1 classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
MIN
TYP.
MAX
UNIT
320
Inchange Semiconductor
Product Specification
2SD613
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3