Inchange Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 85 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 10 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ 85 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 100 V V(BR)EBO Emitter-base breakdown votage IE=5mA; IC=0 6 V Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V VBE Base-emitter voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 15 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 110 pF VCEsat CONDITIONS hFE-1 classifications C D E F 40-80 60-120 100-200 160-320 2 MIN TYP. MAX UNIT 320 Inchange Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3