ISC 2SC3907

Inchange Semiconductor
Product Specification
2SC3907
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1516
APPLICATIONS
·Audio and general purpose power
amplifier applications
·Recommend for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
180
V
VCEO
Collector-emitter voltage
Open base
180
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
IB
Base current
1.2
A
PC
Collector power dissipation
130
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3907
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=8 A;IB=0.8 A
0.3
2.0
V
VBE
Base-emitter voltage
IC=7A ; VCE=5V
1.0
1.5
V
ICBO
Collector cut-off current
VCB=180V; IE=0
5
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=7A ; VCE=5V
35
fT
Transition frequency
IC=1A ; VCE=5V
30
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
270
pF
‹
CONDITIONS
hFE-1 classifications
R
O
55-110
90-180
2
MIN
TYP.
MAX
180
UNIT
V
180
Inchange Semiconductor
Product Specification
2SC3907
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3