Inchange Semiconductor Product Specification 2SC3907 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SA1516 APPLICATIONS ·Audio and general purpose power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 180 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A IB Base current 1.2 A PC Collector power dissipation 130 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3907 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=8 A;IB=0.8 A 0.3 2.0 V VBE Base-emitter voltage IC=7A ; VCE=5V 1.0 1.5 V ICBO Collector cut-off current VCB=180V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 hFE-2 DC current gain IC=7A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V 30 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 270 pF CONDITIONS hFE-1 classifications R O 55-110 90-180 2 MIN TYP. MAX 180 UNIT V 180 Inchange Semiconductor Product Specification 2SC3907 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3