Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ・Power amplifier applications ・Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Base R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Collector;connected to mounting base Emitter Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 100 V Collector-emitter voltage Open base 100 V Emitter-base voltage Open collector 5 V IC Collector current 5 A IE Emitter current -5 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 100 V V(BR)EBO Emitter-base breakdown votage IE=10mA; IC=0 5 V Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V VBE Base-emitter voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V VCEsat hFE-2 fT COB CONDITIONS 40-80 TYP. 40 MAX UNIT 240 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=4A ; VCE=5V Transition frequency IC=1A ; VCE=5V 12 MHz Output capacitance IE=0; VCB=10V;f=1MHz 100 pF hFE-1 classifications R MIN O Y 70-140 120-240 2 20 Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3