Inchange Semiconductor Product Specification BUH1015 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package. ・High voltage. ・High switching speed. APPLICATIONS ・Horizontal deflection for colour TV and monitors. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 14 A ICM Collector current -peak 18 A IB Base current 8 A IBM Base current -peak 11 A PC Collector power dissipation 160 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BUH1015 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 1.5 V ICES Collector cut-off current VCE=1500V ;VBE=0 Tj=125°C 0.2 2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=10A ; VCE=5V 7 10 14 Switching times ts Storage time 1.5 μs 110 ns IC=10A;IB1=2A;IB2=-6A; VCC=400V tf Fall time THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case 2 MAX UNIT 0.78 ℃/W Inchange Semiconductor Product Specification BUH1015 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3