Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B DESCRIPTION ・With TO-3PN package. ・High voltage. ・Very high switching speed. APPLICATIONS ・Suited for 220V switchmode power supply, DC and AC motor control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 固电 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER CONDITIONS Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage M E S E N G A H C N I Open collector UNIT 850 V 400 V 7 V U D N ICO Open emitter Open base TOR VALUE IC Collector current 9 A ICM Collector current-peak 15 A IB Base current 3 A PC Collector power dissipation 90 W Tj Junction temperature -65~150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.38 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 400 V VCEsat-1 VCEsat-2 VBEsat ICEX IEBO hFE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUV47 IC=5A; IB=1A BUV47B IC=6A; IB=1.2A BUV47 IC=8A; IB=2.5A BUV47B IC=9A; IB=3A BUV47 IC=5A; IB=1A BUV47B 体 导 半 固电 VCE=850V ;VBE=-2.5V Emitter cut-off current VEB=5V; IC=0 N G A H C N I Turn-on time ts Storage time tf Fall time 3.0 V 1.6 V IC=10A ; VCE=5V IC=5A IB1=- IB2=1.0A VCC=150V 2 R O T U D N O IC M E S E DC current gain ton V IC=6A; IB=1.2A Collector cut-off current Switching times : 1.5 7 10 0.15 mA 1.0 mA 14 1.0 μs 3.0 μs 0.8 μs Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV47 BUV47B PACKAGE OUTLINE 体 导 半 固电 R O T U D N O IC M E S NE G A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3