Inchange Semiconductor Product Specification BUW49 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package. ・High current capability. ・Fast switching speed. ・Low collector saturation voltage APPLICATIONS ・Switching regulators. ・Motor control. ・High frequency and efficency converters PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 半 固电 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO INC R O T UC Fig.1 simplified outline (TO-3PN) and symbol EM S E G N A H PARAMETER D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 160 V Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 30 A ICM Collector current (Pulse) 40 A IB Base current 6 A IBM Base current (peak) 10 A PC Collector power dissipation 150 W Tj Junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ VCEO TC=25℃ Inchange Semiconductor Product Specification BUW49 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 80 V VCEsat-1 Collector-emitter saturation voltage IC=40A; IB=4A 1.4 V VCEsat-2 Collector-emitter saturation voltage IC=30A; IB=3A 1.2 V Base-emitter saturation voltage IC=30A; IB=3A 2.0 V ICEX Collector cut-off current VCE=rated ;VBE=-1.5V TC=125℃ 1 3 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA fT Transition frequency VCE=15V,f=15MHz;IC=1A VBEsat Switching times : ton ts 固电 体 导 半 tf EM S E NG Turn-on time Storage time A H C IN Fall time 0.8 1.2 μs 0.6 1.1 μs 0.15 0.25 μs D N O IC R O T UC IC=30A; IB1=- IB2=4A VCC=80V 8 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case 2 MAX UNIT 1 ℃/W Inchange Semiconductor Product Specification BUW49 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3