Inchange Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Electronic ignitor ・Relay and solenoid drivers ・Switching regulators ・Motor controls PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter VALUE UNIT 250 V 200 Open base VCEO(SUS) VEBO Collector-emitter voltage V 180 Emitter-base voltage Open collector 10 V 4 A 0.3 A 25 W IC Collector current-continuous IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rθjc CHARACTERISTICS Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1A ; IB=0 180 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A;IB=2mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A;IB=2mA 2.0 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=10V; IC=0 10 mA hFE DC current gain IC=2A ; VCE=2V 1.7 μs 15.0 μs 18.0 μs 1500 Switching times ton Turn-on time ts Storage time tf Fall time IC=2A;IB1=-IB2=5mA; RL=10Ω PW=20μs;Duty≤2% 2 Inchange Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3