Inchange Semiconductor Product Specification BD743/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD744/A/B/C ・High current capability ・High power dissipation APPLICATIONS ・For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 Absolute maximum ratings (Ta=25℃) SYMBOL 固 PARAMETER BD743 BD743A VCBO Open emitter BD743B INCH VCEO VEBO EMIC S E G AN Collector-base voltage BD743C BD743 BD743A Collector-emitter voltage Emitter-base voltage TOR C U D ON CONDITIONS VALUE UNIT 50 70 V 90 110 45 60 Open base V BD743B 80 BD743C 100 Open collector 5 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 5 A PC Collector power dissipation TC=25℃ 90 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Inchange Semiconductor Product Specification BD743/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD743 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT 45 BD743A 60 IC=30mA; IB=0 V BD743B 80 BD743C 100 VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=0.5 A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15 A;IB=5 A 3.0 V VBE -1 Base-emitter on voltage IC=5A ; VCE=4V 1.0 V VBE -2 Base-emitter on voltage IC=15A ; VCE=4V 3.0 V ICEO Collector cut-off current 0.1 mA BD743/A 体 半导 BD743B/C ICBO 固电 BD743 BD743A Collector cut-off current VCE=30V; IB=0 VCE=60V; IB=0 R O T UC VCE=50V; VBE=0 TC=125℃ VCE=70V; VBE=0 TC=125℃ VCE=90V; VBE=0 TC=125℃ VCE=110V; VBE=0 TC=125℃ D N O IC M E S GE BD743B N A H INC BD743C IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 40 hFE-2 DC current gain IC=5A ; VCE=4V 20 hFE-3 DC current gain IC=15A ; VCE=4V 5 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 mA 0.5 mA 150 Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time IC=5 A;IB1=-IB2=0.5 A VBE(off)=-4.2V; RL=6Ω tp=20μs 0.02 μs 0.35 μs 0.5 μs 0.4 μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.40 ℃/W Inchange Semiconductor Product Specification BD743/A/B/C Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3