ISC BD743

Inchange Semiconductor
Product Specification
BD743/A/B/C
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type BD744/A/B/C
・High current capability
・High power dissipation
APPLICATIONS
・For use in power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
导体
半
电
Absolute maximum ratings (Ta=25℃)
SYMBOL
固
PARAMETER
BD743
BD743A
VCBO
Open emitter
BD743B
INCH
VCEO
VEBO
EMIC
S
E
G
AN
Collector-base voltage
BD743C
BD743
BD743A
Collector-emitter voltage
Emitter-base voltage
TOR
C
U
D
ON
CONDITIONS
VALUE
UNIT
50
70
V
90
110
45
60
Open base
V
BD743B
80
BD743C
100
Open collector
5
V
IC
Collector current
15
A
ICM
Collector current-peak
20
A
IB
Base current
5
A
PC
Collector power dissipation
TC=25℃
90
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
BD743/A/B/C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD743
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
45
BD743A
60
IC=30mA; IB=0
V
BD743B
80
BD743C
100
VCEsat-1
Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=15 A;IB=5 A
3.0
V
VBE -1
Base-emitter on voltage
IC=5A ; VCE=4V
1.0
V
VBE -2
Base-emitter on voltage
IC=15A ; VCE=4V
3.0
V
ICEO
Collector cut-off current
0.1
mA
BD743/A
体
半导
BD743B/C
ICBO
固电
BD743
BD743A
Collector cut-off current
VCE=30V; IB=0
VCE=60V; IB=0
R
O
T
UC
VCE=50V; VBE=0
TC=125℃
VCE=70V; VBE=0
TC=125℃
VCE=90V; VBE=0
TC=125℃
VCE=110V; VBE=0
TC=125℃
D
N
O
IC
M
E
S
GE
BD743B
N
A
H
INC
BD743C
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
40
hFE-2
DC current gain
IC=5A ; VCE=4V
20
hFE-3
DC current gain
IC=15A ; VCE=4V
5
0.1
5.0
0.1
5.0
0.1
5.0
0.1
5.0
mA
0.5
mA
150
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC=5 A;IB1=-IB2=0.5 A
VBE(off)=-4.2V; RL=6Ω
tp=20μs
0.02
μs
0.35
μs
0.5
μs
0.4
μs
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
2
MAX
UNIT
1.40
℃/W
Inchange Semiconductor
Product Specification
BD743/A/B/C
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3