RMPA2550 2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier General Description • 27 dB modulated gain 5.15 to 5.85 GHz band • 26 dBm output power @ 1 dB compression both frequency bands • 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz • 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz • 3.3 V single positive supply operation • Adjustable bias current operation • Two power saving shutdown options (bias and logic control) • Separate integrated power detectors with 20 dB dynamic range • Low profile 20 pin, 3 x 4 x 0.9 mm standard Device QFN leadless package • Internally matched to 50 ohms • Optimized for use in 802.11a/b/g applications The RMPA2550 is a dual frequency band power amplifier designed for high performance WLAN applications in the 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The single low profile 20 pin 3 x 4 x 0.9 mm package with internal matching on both input and output to 50 Ω minimizes next level PCB space and allows for simplified integration. The two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. Features • Dual band operation in a single package design • 26 dB modulated gain 2.4 to 2.5 GHz band Electrical Characteristics1,3 802.11g/a OFDM Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Supply Voltage Gain Total Current @ 18dBm POUT Total Current @ 19dBm POUT EVM @ 18dBm POUT2 EVM @ 19dBm POUT2 Detector Output @ 19dBm POUT Detector Threshold4 POUT Spectral Mask Compliance5,7 Minimum 2.4 3.0 24.5 Typical Maximum 2.5 3.6 28 182 189 2.5 3.5 600 7.0 3.3 26 150 157 2.0 3.0 508 5.0 21.0 Minimum 5.15 3.0 25.5 Typical 3.3 27 228 235 2.5 3.5 780 5.0 21.0 Maximum 5.85 3.6 29 260 267 3.5 4.5 865 7.0 Unit GHz V dB mA mA % % mV dBm dBm Electrical Characteristics3,6 802.11b CCK Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth Parameter Frequency Supply Voltage Gain Total Current First Sidelobe Power Second Sidelobe Power Max POUT Spectral Mask Compliance7 Minimum 2.4 3.0 24.5 Typical 3.3 26 250 Maximum 2.5 3.6 28 -40 -55 24.0 Unit GHz V dB mA dBc dBc dBm Notes: 1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50Ω system. VL adjusted for either 2.4 or 5 GHz operation. 2: Percentage includes system noise floor of EVM=0.8%. 3: Not measured 100% in production. 4: POUT measured at PIN corresponding to power detection threshold. 5: Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, POUT =+23 dBm, 50Ω system. Satisfies spectral mask. 7: PIN is adjusted to point where performance approaches spectral mask requirements. ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D RMPA2550 August 2004 Parameter Frequency Supply Voltage Gain2 Total Quiescent Current2 Bias Current at pin VM3 P1dB Compression2 Current @ P1dB Comp2 Standby Current4 Shutdown Current (VM=0V) Input Return Loss Output Return Loss Detector Output at P1dB Comp Detector POUT Threshold9 2nd Harmonic Output at P1dB 3rd Harmonic Output at P1dB Logic Shutdown Control Pin: Device Off Device On Logic Current Turn-on Time5 Turn-off Time Spurious (Stability)6 Minimum 2.4 3.0 24 70 25 2.0 Typical 3.3 26 120 13.5 26 350 0.5 <1.0 15 12 2.0 7.0 -45 -42 VL 2.4 2.4 0.0 10 <1 <1 -65 Maximum 2.5 3.6 29 150 18.0 Minimum 5.15 3.0 24 150 24 475 9.0 0.8 2.0 Typical 3.3 27.5 180 15.5 26 400 2 100 14 16 3.0 7.0 -30 -35 VL 5.0 0.0 2.4 100 <1 <1 -65 Maximum 5.85 3.6 31 225 Unit GHz V dB mA mA dBm mA mA µA dB dB V dBm dBc dBc 475 9.0 0.8 V V µA µS µS dBc Notes: 1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50Ω system. VL adjusted for either 2.4 or 5 GHz operation. 2: 100% production screened. 3: Bias current is included in the Total Quiescent Current. 4: VL is set to Logic Level for Device Off operation. 5: Measured from Device On signal turn on, to the point where RF POUT stabilizes to 0.5dB. 6: Load VSWR is set to 8:1 and the angle is varied 360 degrees. POUT = -30dBm to P1dB. 7: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. 8: Not measured in production. 9: POUT measured at PIN corresponding to power detection threshold. Absolute Ratings1 Symbol VC IC2.4, IC5.0 VM VL PIN TCASE TSTG Parameter Positive Supply Voltage Supply Current IC2.4 IC5.0 Positive Bias Voltage Logic Voltage RF Input Power Case Operating Temperature Storage Temperature Value 5 Units V 820 700 4.0 mA mA V 5 10 -40 to +85 -55 to +150 V dBm °C °C Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D RMPA2550 Electrical Characteristics1 Single Tone BIAS DETECTOR INPUT MATCH 5.0 GHz PA OUTPUT MATCH BIAS INPUT MATCH 2.4 GHz PA OUTPUT MATCH DETECTOR BIAS Backside Ground ©2004 Fairchild Semiconductor Corporation Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Description VM 2.4 DT2 2.4 DT1 2.4 (Vdet) VC2 2.4 N/C RF OUT 2.4 N/C N/C RF OUT 5.0 DT1 5.0 (Vdet) VC3 5.0 VC2 5.0 VM2 5.0 VL 5.0 VM13 5.0 VC1 5.0 RF IN 5.0 VC1 2.4 RF IN 2.4 VL 2.4 RMPA2550 Rev. D RMPA2550 Functional Block Diagram 802.11g/a Frequency Dependency RMPA2550 Total Measured EVM Vs. Modulated Pout 5.15 to 5.85 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 10 10 8 8 6 Total Measured EVM (%) Total Measured EVM (%) RMPA2550 Total Measured EVM Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 2.40 GHz 2.45 GHz 2.50 GHz 4 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz 6 4 Includes 0.8% System Level EVM Includes 0.8% System Level EVM 2 2 0 0 5 10 15 20 25 0 10 15 20 25 Modulated Power Out (dBm) RMPA2550 Detector Voltage Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz RMPA2550 Detector Voltage Vs. Modulated Pout 5.15 to 5.85 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 1000 2000 800 1600 600 2.40 GHz 2.45 GHz 2.50 GHz 400 200 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz 1200 800 400 0 0 0 5 10 15 Modulated Power Out (dBm) 20 25 0 RMPA2550 Total Current Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 5 10 15 Modulated Power Out (dBm) 20 25 RMPA2550 Total Current Vs. Modulated Pout 5.15 to 5.85 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 300 300 250 250 Total Current (mA) Total Current (mA) 5 Modulated Power Out (dBm) Detector Voltage (mV) Detector Voltage (mV) 0 2.40 GHz 2.45 GHz 2.50 GHz 200 150 200 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz 150 100 100 0 5 10 15 Modulated Power Out (dBm) ©2004 Fairchild Semiconductor Corporation 20 25 0 5 10 15 Modulated Power Out (dBm) 20 25 RMPA2550 Rev. D RMPA2550 Performance Data RMPA2550 Performance Data (Continued) 802.11g/a Frequency Dependency (continued) RMPA2550 Gain Vs. Modulated Pout 5.15 to 5.85 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 30 30 28 28 26 26 Gain (dB) Gain (dB) RMPA2550 Gain Vs. Modulated Pout 2.40 to 2.50 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 24 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz 24 2.40 GHz 2.45 GHz 2.50 GHz 22 22 20 20 0 5 10 15 20 25 0 5 Modulated Power Out (dBm) 10 15 20 25 Modulated Power Out (dBm) 802.11g/a Temperature Dependency RMPA2550 Total Measured EVM Vs. Modulated Pout 5.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz RMPA2550 Total Measured EVM Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz 10 10 8 Total Measured EVM (%) Total Measured EVM (%) 8 T=-40C T=+25C T=+85C 6 4 T=-40C T=+25C T=+85C 6 4 Includes 0.8% System Level EVM Includes 0.8% System Level EVM 2 2 0 0 0 5 10 15 20 25 0 5 Modulated Power Out (dBm) 20 25 2000 800 1600 Detector Voltage (mV) Detector Voltage (mV) 15 RMPA2550 Detector Voltage Vs. Modulated Pout 5.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz RMPA2550 Detector Voltage Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz 1000 10 Modulated Power Out (dBm) 600 T=-40C T=+25C T=+85C 400 200 T=-40C T=+25C T=+85C 1200 800 400 0 0 0 5 10 15 Modulated Power Out (dBm) ©2004 Fairchild Semiconductor Corporation 20 25 0 5 10 15 20 25 Modulated Power Out (dBm) RMPA2550 Rev. D RMPA2550 Performance Data (Continued) 802.11g/a Temperature Dependency (continued) RMPA2550 Total Current Vs. Modulated Pout 5.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz 300 300 250 250 T=-40C T=+25C T=+85C Total Current (mA) Total Current (mA) RMPA2550 Total Current Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz 200 200 150 150 100 100 0 30 5 10 15 20 25 0 5 10 15 20 Modulated Power Out (dBm) Modulated Power Out (dBm) RMPA2550 Gain Vs. Modulated Pout 2.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz RMPA2550 Gain Vs. Modulated Pout 5.45 GHz VM, VC=3.3V T=-40, +25, +85C Data Rate 54Mbps OFDM 16.7MHz 29 25 30 29 T=-40C T=+25C T=+85C 28 28 27 27 Gain (dB) Gain (dB) T=-40C T=+25C T=+85C 26 25 26 25 24 T=-40C T=+25C T=+85C 24 23 23 0 5 10 15 Modulated Power Out (dBm) 20 25 0 5 10 15 Modulated Power Out (dBm) 20 25 802.11g/a VM Dependency RMPA2550 Total Measured EVM Vs. Modulated Pout 5.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz RMPA2550 Total Measured EVM Vs. Modulated Pout 2.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 10 10 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V 6 4 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V 8 Total Measurment EVM (%) Total Measurment EVM (%) 8 Includes 0.8% System Level EVM 2 6 4 Includes 0.8% System Level EVM 2 0 0 0 5 10 15 Modulated Power Out (dBm) ©2004 Fairchild Semiconductor Corporation 20 25 0 5 10 15 20 25 Modulated Power Out (dBm) RMPA2550 Rev. D 802.11g/a VM Dependency (continued) RMPA2550 Modulated Pout for 3% Total System EVM for VM=2.7 to 3.3V, VC=3.3V, T=25C Data Rate 54Mbps OFDM 16.7MHz 20 20 18 18 Modulated Power Out (dBm) Modulated Power Out (dBm) RMPA2550 Modulated Pout for 3% Total System EVM for VM=2.7 to 3.3V, VC=3.3V, T=25C Data Rate 54Mbps OFDM 16.7MHz 16 14 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V 12 10 8 2.38 16 14 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V 12 10 8 2.4 2.42 2.44 2.46 2.48 2.5 2.52 5.1 5.2 5.3 Frequency (GHz) 5.6 5.7 5.8 5.9 RMPA2550 Total Current Vs. Modulated Pout 5.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 300 300 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V 200 250 Total Current (mA) 250 Total Current (mA) 5.5 Frequency (GHz) RMPA2550 Total Current Vs. Modulated Pout 2.45 GHz VM=2.7 to 3.3V, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 150 100 50 200 150 VM=2.7V VM=2.8V VM=2.9V VM=3.0V VM=3.1V VM=3.2V VM=3.3V 100 50 0 0 0 5 10 15 Modulated Power Out (dBm) 20 25 0 5 10 15 Modulated Power Out (dBm) 20 25 RMPA2550 Total Quiescent Bias Current Vs. VM Voltage 5.45 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz RMPA2550 Total Quiescent Bias Current Vs. VM Voltage 2.45 GHz VM, VC=3.3V T=25C Data Rate 54Mbps OFDM 16.7MHz 250 250 Total Quiescent Supply Current (mA) Total Quiescent Supply Current (mA) 5.4 200 150 100 50 0 200 150 100 50 0 2.6 2.7 2.8 2.9 3 3.1 VM Voltage Supply (V) ©2004 Fairchild Semiconductor Corporation 3.2 3.3 3.4 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 VM Voltage Supply (V) RMPA2550 Rev. D RMPA2550 Performance Data (Continued) RMPA2550 Performance Data (Continued) Single Tone RMPA2550 Single Tone Gain Vs. Power Out 5.15 to 5.85 GHz VM, VC=3.3V T=25C 29 29 28 28 27 27 Gain (dB) Gain (dB) RMPA2550 Single Tone Gain Vs. Power Out 2.40 to 2.50 GHz VM, VC=3.3V T=25C 26 25 26 5.15 GHz 5.25 GHz 5.35 GHz 5.45 GHz 5.55 GHz 5.65 GHz 5.75 GHz 5.85 GHz 25 2.40 GHz 2.45 GHz 2.50 GHz 24 24 23 23 0 5 10 15 20 25 30 0 5 10 Single Tone Power Out (dBm) 30 25 30 30 T=-40C T=+25C T=+85C 29 29 28 Gain (dB) 28 Gain (dB) 20 RMPA2550 Single Tone Gain Vs. Power Out 5.45 GHz VM, VC=3.3V T=-40, +25, +85C RMPA2550 Single Tone Gain Vs. Power Out 2.45 GHz VM, VC=3.3V T=-40, +25, +85C 27 26 27 26 25 25 24 24 23 T=-40C T=+25C T=+85C 23 0 5 10 15 20 25 30 0 5 Single Tone Power Out (dBm) 15 20 25 30 RMPA2550 S-Parameters 5.0 GHz Band T=25C VM, VC=3.3V 40 20 20 S-Parameters (dB) 40 0 -20 S11 Mag S21 Mag S22 Mag -40 10 Single Tone Power Out (dBm) RMPA2550 S-Parameters 2.4 GHz Band T=25C VM, VC=3.3V S-Parameters (dB) 15 Single Tone Power Out (dBm) 0 -20 -40 -60 S11 Mag S21 Mag S22 Mag -60 2 2.2 2.4 2.6 Frequency (GHz) ©2004 Fairchild Semiconductor Corporation 2.8 3 5 5.2 5.4 5.6 5.8 6 Frequency (GHz) RMPA2550 Rev. D RMPA2550 Performance Data (Continued) 802.11g/a/b Spectral Mask RMPA2550 802.11g Spectral Mask 2.45 GHz T=25C VM, VC = 3.3V RMPA2550 802.11a Spectral Mask 5.25 GHz T=25C VM, VC = 3.3V 0 Power Spectral Density (dBr) Power Spectral Density (dBr) 0 -10 -20 -30 -40 -50 +10dBm Pout(dBr) +16dBm Pout(dBr) +20dBm Pout(dBr) Mask (dBr) -60 -70 2400 2420 2440 2460 2480 2500 -10 -20 -30 -40 -50 +10dBm Pout(dBr) +16dBm Pout(dBr) +20dBm Pout(dBr) Mask (dBr) -60 -70 5200 5220 Frequency (MHz) 5240 5260 5280 5300 Frequency (MHz) RMPA2550 802.11b Spectral Mask 2.45 GHz T=25C VM,VC =3.3V Power Spectral Density (dBr) 0 +14dBm Pout(dBr) +17dBm Pout(dBr) +21dBm Pout(dBr) +24dBm Pout(dBr) Mask (dBr) -10 -20 -30 -40 -50 -60 -70 2400 2420 2440 2460 2480 2500 Frequency (MHz) ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D RMPA2550 Package Outline Dimensions in inches [mm] Detail B Front Side View Bottom View as Viewed from Bottom ©2004 Fairchild Semiconductor Corporation Detail A RMPA2550 Rev. D RMPA2550 Evaluation Board Schematic Evaluation Board Bill of Materials ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D RMPA2550 Evaluation Board Layout Actual Board Size = 2.0" X 1.5" = component = Jumper/short connection Actual Board Size = 2.0" X 1.5" Evaluation Board Turn-On Sequence1 1) Connect RF ports to RF test equipment. 2) Connect common ground terminal to the Ground (GND) pin on the board. 3) Connect terminals VC1 5.0, VC2 5.0, VC3 5.0, VC1 2.4, VC2 2.4 together and apply to positive supply (VC=3.3V). 4) Connect terminals VM 2.4, VM2 5.0 and VM13 5.0 together and connect to positive supply (VM=3.3V). 5) Connect voltmeter to Detector Output, pin DT1 5.0 and to DT1 2.4. 6) Connect logic control pins VL 5.0 and VL 2.4 together and apply 0V. Now only the 2.4GHz PA is on. Observe the following positive currents flowing into the pins: Pin VL 2.4 VC (total) 2.4 VM 2.4 Current <1 nA 80 – 110 mA 12 – 15 mA Pin VL 5.0 VC (total) 5.0 VM (total) 5.0 Current <1 nA <1 nA <1.9 mA 7) Apply positive voltage of +3.0V to logic control pins VL 5.0 and VL 2.4. Now only the 5GHz PA is on. Observe the following positive currents flowing into the pins: Pin VL 5.0 VC (total) 5.0 VM 5.0 Current ~150 µA ~184 mA ~16 mA Pin VL 2.4 VC (total) 2.4 VM 2.4 Current <0.25mA <1 nA <0.7mA 8) Apply input RF power to SMA connector pin RF IN 2.4 or RF IN 5.0. Currents on collector pins will vary depending on the input drive level. Recommended turn-off sequence: Use reverse order described in the turn-on sequence on the previous page. Note: 1. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design. ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D RMPA2550 Application Information Precautions to Avoid Permanent Device Damage: Static Sensitivity: Follow ESD precautions to protect against ESD damage: • A properly grounded static-dissipative surface on which to place devices. • Static-dissipative floor or mat. • A properly grounded conductive wrist strap for each person to wear while handling devices. ©2004 Fairchild Semiconductor Corporation RMPA2550 Rev. D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11