Transistors IC MOSFET SMD Type Product specification 2N7002T SOT-523 Unit: mm +0.1 1.6-0.1 ■ Features +0.1 -0.1 1.0 +0.05 0.2-0.05 +0.01 0.1-0.01 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Low Gate Threshold Voltage 0.55 ● Low On-Resistance ● Low Input Capacitance ● Fast Switching Speed 0.35 3 +0.25 0.3-0.05 ● Low Input/Output Leakage +0.1 -0.1 0.5 1.Gate 2.Soruce 3.Drain +0.1 0.8-0.1 +0.05 0.75-0.05 ● Ultra-Small Surface Mount Package ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current - Continuous Power dissipation 115 ID - Pulsed Note(1) mA 800 @ TA = 25℃ Operating and storage junction temperature range PD 0.15 W TJ, Tstg -55 to +150 ℃ Notes: 1. Pulse width limited by maximum junction temperature. ■ Electrical Characteristics Ta = 25℃ Test conditons Min V(BR)DSS VGS=0 V, ID=10μA 60 VGS(th) VDS=VGS, ID=250μA 1 Gate-body leakage lGSS VDS=0 V, VGS=±20 V Zero gate voltage drain current IDSS Parameter Symbol Drain-source breakdown voltage Gate-threshold voltage Typ Max 1.76 2 V ±10 1 VDS=60 V, VGS=0 V VGS=10 V, VDS=7.5 V ID(ON) Drain-source on-resistance Forward tran conductance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 0.5 13.5 VGS=5 V, ID=50 mA 7.5 VDS=10 V, ID=200 mA 80 VDS=25 V, VGS=0 V, f=1 MHz Turn-on Time td(on) VDD = 30 V, RL = 150 Ω Turn-off Time td(off) ID =0.2 A, VGEN = 10 V, RG = 25Ω μA A VGS=10 V, ID=500 mA @Tj = 125℃ gts nA 500 TC = 125℃ On-state drain current Unit Ω ms 22 50 11 25 pF 2 7 7.0 20 ns 11 20 ns ■ Marking Marking 702 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1