WEITRON 2N7000

WEITRON
Small Signal MOSFET
N-Channel
2N7000
3 DRAIN
TO-92
Features:
*Low On-Resistance : 5 Ω
*Low Input Capacitance: 60PF
*Low Out put Capacitance : 25PF
*Low Threshole :1.4V(TYE)
*Fast Switching Speed : 10ns
2
GATE
1. SOURCE
2. GATE
3. DRAIN
1
1
2
3
SOURCE
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
200
mA
Pulsed Drain Current(1)
IDM
500
mA
Power Dissipation (TA=25 C)
PD
350
mW
R θJA
357
C/W
TJ, Tstg
-55 to 150
C
Continuous Drain Current (TA=25 C)
Maximax Junction-to-Ambient
Operating Junction and Storage
Temperature Range
Device Marking
2N7000=7000
Note 1:
Pulse Width Limited by Maximum Junction Temperature
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2N7000
Electrical Characteristics
(TA=25 C Unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)DSS
60
-
V
VGS (th)
0.8
3.0
V
Gate-body Leakage
VDS=0V, VGS=15V
IGSS
-
-10
nA
Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
VDS=48V, VGS=0V, Tj=125 C
IDSS
-
-
1.0
1.0
uA
mA
75
-
mA
Characteristic
Static
Drain-Source Breakdown Voltage
VGS=0V, ID=10 uA
Gate-Threshold Voltage
VDS=VGS , ID=1.0 mA
On-State Drain Current (2)
VGS=4.5V, VDS=10V
ID (on)
Drain-Source On-Resistance (2)
VGS=10V, ID=500mA
VGS=4.5V, ID=75mA
rDS (on)
-
5.0
6.0
Ω
Forward Transconductance (2)
VDS=10V, ID=200mA
gfs
100
-
us
V
Drain-Source On-Voltage
VGS=10V, ID=500mA
VGS=10V, ID=75mA
VSD(on)
-
2.5
0.45
Ciss
-
60
Coss
-
25
Crss
-
5.0
Turn-On Time
VDD=15V, RL=30 Ω ,ID=500mA
VGEN=10V, RG=25 Ω
td(on)
-
10
nS
Turn-Off Time
VDD=15V, RL=30 Ω, ID=500mA
VGEN=10V, RG=25 Ω
td(off )
-
10
nS
Dynamic(1)
Input Capacitance
VDS=25V, VGS=0V, f=1MHZ
Output Capacitance
VDS=25V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHZ
PF
Switching (1) (3)
Note: 1. For Design Aid Only not Subject to Production Testing.
2. Pulse Test : PW<_ 300µs, Duty Cycle <_ 2%
3. Switching Time is Essentially Independent of Operating Temperature .
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2N7000
2.0
VDS = 10 V
TA = 25 C
1.6
VGS = 10 V
1.4
9V
1.2
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
1.8
1.0
8V
1.0
7V
0.8
6V
0.6
0.4
5V
0.2
4V
3V
0
0
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0
VDS , DRAIN SOURCE VOLTAGE (VOLTS)
9.0
0.8
0.4
0.2
2.4
2.2
1.8
VGS = 10 V
ID = 200 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- 60
- 20
+ 20
+ 60
T , TEMPERATURE ( C)
+ 100
FIG.3 Temperature versus Static
Drain-Source On-Resistance
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1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS , GATE SOURCE VOLTAGE (VOLTS)
9.0
10
FIG.2 Transfer Characteristics
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
rDS(on) , STATIC DRAIN-SOURCE ON-RESIST ANCE
(NORMALIZED)
FIG. 1 Ohmic Region
2.0
125 C
0.6
0
10
25 C
- 55 C
+ 140
1.2
1.05
VDS = VGS
ID = 1.0 mA
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
- 60
- 20
+ 20
+ 60
T , TEMPERATURE ( C)
+ 100
FIG.4 Temperature versus Gate
Threshold Voltage
+ 140
2N7000
TO-92 Outline Dimensions
unit:mm
E
H
TO-92
Dim
A
B
C
D
E
G
H
J
K
L
L
C
J
K
D
A
B
G
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Min
Max
5.100
3.000
2.030
1.100
0.600
0.380
1.100
0.360
0.500
4.400
3.430
4.700
4.300
1.270TYP
2.440
2.640
14.100
14.500