FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ Features Description • 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V ID = 6.8 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge (Typ. 68 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested D G G D FQA13N80_F109 N-Channel QFET® MOSFET April 2013 TO-3PN S S Absolute Maximum Ratings Symbol Parameter FQA13N80_F109 Unit VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 12.6 A IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS - Continuous (TC = 100°C) 8.0 A (Note 1) 50.4 A ± 30 V Single Pulsed Avalanche Energy (Note 2) 1100 mJ IAR Avalanche Current (Note 1) 12.6 A EAR Repetitive Avalanche Energy (Note 1) 30 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 4.0 V/ns 300 W 2.38 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol FQA13N80_F109 Parameter Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.42 RθCS Thermal Resistance, Case-to-Sink, Typ. 0.24 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. C0 1 °C/W www.fairchildsemi.com Device Marking Device Package Reel Size Tape Width Quantity FQA13N80 FQA13N80_F109 TO-3PN -- -- 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 800 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.95 IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6.3A gFS Forward Transconductance VDS = 50 V, ID = 6.3A (Note 4) -- 0.58 0.75 Ω -- 13 -- S -- 2700 3500 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 275 360 pF -- 30 39 pF -- 60 130 ns -- 150 310 ns -- 155 320 ns -- 110 230 ns -- 68 88 nC -- 15 -- nC -- 32 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 400 V, ID = 12.6A, RG = 25 Ω (Note 4, 5) VDS = 640 V, ID = 12.6A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12.6 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 50.4 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =12.6A -- -- 1.4 V trr Reverse Recovery Time -- 850 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 12.6 A, dIF / dt = 100 A/µs -- 11.3 -- µC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13mH, IAS =12.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 12.6A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. C0 2 www.fairchildsemi.com FQA13N80_F109 N-Channel QFET® MOSFET Package Marking and Ordering Information FQA13N80_F109 N-Channel QFET® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test -1 -1 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1.8 VGS = 10V 1.2 VGS = 20V 0.9 0.6 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 0.3 -1 0 5 10 15 20 25 30 35 40 10 45 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 5000 Capacitance [pF] VGS, Gate-Source Voltage [V] Ciss 3000 Coss 2000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1500 Crss 1000 VDS = 400V VDS = 640V 8 6 4 2 500 0 -1 10 1.4 VDS = 160V 10 2500 1.2 12 4000 3500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 4500 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] ※ Note : ID = 12.6 A 0 0 10 1 10 ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. C0 0 10 20 30 40 50 60 70 80 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.3 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 14 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 12 1 10 DC 100µ s 1 ms 10 ms 10µ s ID, Drain Current [A] 2 10 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 1 2 10 8 6 4 2 -2 10 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Zθ JC(t), Thermal Response Figure 11. Transient Thermal Response Curve D = 0 .5 10 -1 ※ N o te s : 1 . Z θ J C (t) = 0 .4 2 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 0 .1 0 .0 5 PDM 0 .0 2 10 t1 0 .0 1 -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. C0 4 www.fairchildsemi.com FQA13N80_F109 N-Channel QFET® MOSFET Typical Performance Characteristics (Continued) FQA13N80_F109 N-Channel QFET® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. C0 5 www.fairchildsemi.com FQA13N80_F109 N-Channel QFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. C0 6 www.fairchildsemi.com FQA13N80_F109 N-Channel QFET® MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2007 Fairchild Semiconductor Corporation FQA13N80_F109 Rev. 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