PANJIT PJP830

PJP830 / PJF830
TO-220AB / ITO-220AB
500V N-Channel Enhancement Mode MOSFET
FEATURES
• 4.5A , 500V, RDS(ON)=1.5Ω@VGS=10V, ID=2.5A
•
•
•
•
•
•
TO-220AB
Low ON Resistance
Fast Switching
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charge and SMPS
In compliance with EU RoHs 2002/95/EC Directives
ITO-220AB
3S
2
1 D
G
3S
12D
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2
Drain
3
Source
ORDERING INFORMATION
1
TYPE
MARKING
PACKAGE
PACKING
PJP830
P830
TO-220AB
50PCS/TUBE
PJF830
F830
ITO-220AB
50PCS/TUBE
Gate
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
S ymb o l
PJP830
PJF830
Uni ts
D ra i n-S o urc e Vo lta g e
V DS
500
V
Ga te -S o urc e Vo lta g e
V GS
+3 0
V
C o nti nuo us D ra i n C urre nt
ID
4 .5
4 .5
A
P uls e d D ra i n C urre nt 1 )
ID M
18
18
A
PD
87
0 .7
44
0 .3 5
W
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
T A =2 5 O C
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=4.5A, VDD=82V, L=26.5mH
T J ,T S TG
-5 5 to +1 5 0
E AS
310
O
C
mJ
Junction-to-Case Thermal Resistance
R θJ C
1 .4 3
2 .8 2
O
C /W
Junction-to Ambient Thermal Resistance
R θJ A
6 2 .5
100
O
C /W
Note : 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JAN.08.2010
PAGE . 1
PJP830 / PJF830
ELECTRICAL CHARACTERISTICS
P a ra me te r
( TA=25OC unless otherwise noted )
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
D rai n-S o urc e B re a k d own Vo ltag e
B V D SS
V GS =0 V, I D =2 5 0 uA
500
-
-
V
Ga te Thre s ho ld Vo lta g e
V GS (th)
V D S =V GS , I D =2 5 0 uA
2 .0
-
4 .0
V
R D S (o n)
VGS= 10V, I D= 2.5A
-
1.3
1.5
Ω
I DSS
VDS=500V, VGS=0V
-
-
10
uA
I GS S
V GS =+3 0 V, V D S =0 V
-
-
+1 0 0
nΑ
-
1 8 .6
-
-
3 .6
-
S ta ti c
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urre nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha rg e
Qg
Ga te -S o urc e C ha rg e
Q gs
Ga te -D ra i n C ha rg e
Q gd
-
8.4
-
Turn-On D e la y Ti me
t d (o n)
-
12.8
26
Turn-On Ri s e Ti me
tr
-
16.4
22
-
3 6 .2
56
-
22
32
-
560
980
-
68
150
-
8.2
12
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
t d (o ff)
V D S =4 0 0 V, ID =4 .5 A
V GS =1 0 V
VDD=250V , I D =4.5A
VGS=10V , RG=25Ω
tf
Inp ut C a p a c i ta nc e
C
i ss
Outp ut C a p a c i ta nc e
C
o ss
Re ve rs e Tra ns fe r
C a p a c i ta nc e
C
rs s
V D S =2 5 V, V GS =0 V
f=1 .0 MH Z
nC
ns
pF
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
IS
-
-
-
4 .5
A
Ma x.P uls e d S o urc e C urre nt
I SM
-
-
-
18
A
D i o d e F o rwa rd Vo lta g e
V SD
IS =4 .5 A , V GS =0 V
-
-
1 .5
V
Re ve rs e Re c o ve ry Ti me
t rr
-
250
-
ns
Re ve rs e Re c o ve ry C ha rg e
Q rr
V GS =0 V, IF = 4 .5 A
d i /d t=1 0 0 A /us
-
2 .2
-
uC
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
STAD-JAN.08.2010
PAGE . 2
PJP830 / PJF830
10
9
8
7
6
5
4
3
2
1
0
ID - Drain Source Current (A)
ID - Drain-to-Source Current (A)
Typical Characteristics Curves ( Ta=25℃
℃, unless otherwise noted)
VGS= 20V~ 7.0V
VDS =50V
10
6.0V
5.0V
TJ = 125oC
-55oC
0.1
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
2
2.4
2
RDS(ON) - On Resistance(Ω
Ω)
RDS(ON) - On Resistance(Ω
Ω)
3
4
5
6
7
8
VGS - Gate-to-Source Voltage (V)
Fig.2 Transfer Characteristric
Fig.1 Output Characteristric
2.2
ID =2.5A
1.8
2
1.6
1.8
1.6
VGS=10V
1.4
1.4
VGS = 20V
TJ =25oC
1.2
1.2
1
1
0
2
4
6
8
ID - Drain Current (A)
2
10
Fig.3 On Resistance vs Drain Current
2.9
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Fig.4 On Resistance vs Gate to Source Voltage
1000
VGS =10 V
ID =2.5A
2.5
C - Capacitance (pF)
RDS(ON) - On-Resistance(Normalized)
25oC
1
2.1
1.7
1.3
0.9
f = 1MHz
VGS = 0V
800
Ciss
600
400
200
Coss
Crss
0.5
0
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (oC)
Fig.5 On Resistance vs Junction Temperature
STAD-JAN.08.2010
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Fig.6 Capacitance
PAGE. 3
PJP830 / PJF830
12
100
ID =4.5A
10
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
Typical Characteristics Curves ( Ta=25℃
℃, unless otherwise noted)
VDS=400V
VDS=250V
8
VDS=100V
6
4
2
VGS = 0V
10
TJ = 125oC
1
25oC
-55oC
0.1
0.01
0
0
4
8
12
16
Qg - Gate Charge (nC)
20
Fig. 7 Gate Charge Waveform
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Fig.8 Source-Drain Diode Forward Voltage
BVDSS - Breakdown Voltage(Normalized)
1.2
ID = 250µA
1.1
1
0.9
0.8
-50 -25
0
25
50
75
100 125 150
TJ - Junction Temperature (oC)
Fig.9 Breakdown Voltage vs Junction Temperature
STAD-JAN.08.2010
PAGE. 4
PJP830 / PJF830
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
STAD-JAN.08.2010
PAGE . 5
HALOGEN FREE PRODUCT DECLARATION
(Use green molding compound:ELER-8)
1. Pan Jit can produce halogen free product use molding compound for
packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm,
Br+Cl<1000ppm,Sb2O3<100ppm.
2. If your company need halogen free product shall be note requirement
green compound material on order for the halogen free product
request.