PJF2N70 / PJU2N70 700V N-Channel Enhancement Mode MOSFET ITO-220AB/TO-251 FEATURES ITO-220AB • 700V, RDS(ON)=5.5Ω@VGS=10V, ID=2A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives TO-251 2 1 DS G MECHANICAL DATA G 2 D 3 S INTERNAL SCHEMATIC DIAGRAM • Case: TO-220AB / TO-251 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE MARKING PACKAGE PACKING PJF2N70 F2N70 ITO-220AB 50PCS/TUBE PJU2N70 U2N70 TO-251 80PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l P J F 2 N7 0 P J U2 N7 0 U ni t s D r a i n- S o ur c e Vo l t a g e V DS 700 V G a t e - S o ur c e Vo l t a g e V GS +30 V C o nt i nuo us D r a i n C ur r e nt ID 2 2 A P ul s e d D r a i n C ur r e nt 1) ID M 8 8 A PD 20 0 .1 6 31 0 .2 5 W M a xi m um P o w e r D i s s i p a t i o n D e r a t i ng F a c t o r T A = 2 5 OC O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse IAS=2A, VDD=50V, L=45mΗ T J , T S TG -5 5 to +1 5 0 E AS 140 O C mJ Junction-to-Case Thermal Resistance R θJC 6 .2 5 4 O C /W Junction-to Ambient Thermal Resistance R θJA 6 2 .5 100 O C /W Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-NOV.24.2009 PAGE . 1 PJF2N70 / PJU2N70 ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V GS = 0 V , I D = 2 5 0 uA 700 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V GS , I D = 2 5 0 uA 2 .0 - 4 .0 V R D S ( o n) VGS= 10V, I D= 1A - 5.5 6.5 Ω I DSS VDS=700V, VGS=0V - - 10 uA I GS S V G S =+ 3 0 V , V D S = 0 V - - +100 nΑ - 1 0 .8 - - 2 .1 - S ta ti c D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o Ga te Vo lta g e D r a i n C ur r e nt Gate Body Leakage Dynamic To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e Q gs G a t e - D r a i n C ha r g e Q gd - 4.5 - Tu r n - O n D e l a y Ti m e t d ( o n) - 11.2 18 Tu r n - O n R i s e Ti m e tr - 10.8 16 - 2 2 .4 31 - 1 6 .8 24 - 338 395 - 28.6 65 - 2.4 3.6 Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e V D S = 5 6 0 V , ID = 2 A V GS = 1 0 V VDD=350V ,I D =2A VGS=10V , RG=25Ω t d (o ff) tf In p u t C a p a c i t a n c e C iss O ut p ut C a p a c i t a nc e C oss R e v e r s e Tr a n s f e r C a p a c i t a nc e C rss V D S = 2 5 V , V GS = 0 V f=1 .0 MHZ nC ns pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt IS - - - 2 .0 A M a x. P ul s e d S o ur c e C ur r e nt I SM - - - 8 .0 A D i o d e F o rwa rd Vo lta g e V SD IS = 2 A , V G S = 0 V - - 1 .4 V R e v e r s e R e c o v e r y Ti m e t rr - 260 - ns R e ve r s e R e c o ve r y C ha r g e Q rr V G S = 0 V , IF = 2 A d i / d t = 1 0 0 A / us - 1 .0 9 - uC NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. STAD-NOV.24.2009 PAGE . 2 PJF2N70 / PJU2N70 Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 10 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 4 VGS= 20V~ 6.0V 3.5 3 2.5 5.0V 2 1.5 1 0.5 0 0 5 10 15 20 25 VDS=40V TJ = 125oC 1 25oC -55oC 0.1 30 2 VDS - Drain-to-Source Voltage (V) 5 6 7 8 RDS(ON) - On Resistance(Ω Ω) 7.0 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 VGS=10V VGS = 20V 0 1 2 3 4 ID =1A 6.5 6.0 5.5 5.0 4.5 TJ =25oC 4.0 3.5 3.0 5 2 4 Fig.3 On Resistance vs Drain Current C - Capacitance (pF) 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 f = 1MHz VGS = 0V 400 Ciss 300 200 100 Coss Crss 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature STAD-NOV.24.2009 10 500 VGS =10 V ID =1.0A 2.1 8 Fig.4 On Resistance vs Gate to Source Voltage 2.5 2.3 6 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) RDS(ON) - On-Resistance(Normalized) 4 Fig.2 Transfer Characteristric Fig.1 Output Characteristric RDS(ON) - On Resistance(Ω Ω) 3 VGS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJF2N70 / PJU2N70 100 12 VGS = 0V ID =2A 10 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VDS=480V VDS=300V 8 VDS=120V 6 4 TJ = 125oC 1 25oC -55oC 0.1 2 0.01 0 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Qg - Gate Charge (nC) Fig.8 Source-Drain Diode Forward Voltage Fig. 7 Gate Charge Waveform BVDSS - Breakdown Voltage(NORMALIZED) 10 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-NOV.24.2009 PAGE. 4 PJF2N70 / PJU2N70 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-NOV.24.2009 PAGE . 5 HALOGEN FREE PRODUCT DECLARATION (Use green molding compound:ELER-8) 1. Pan Jit can produce halogen free product use molding compound for packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm, Br+Cl<1000ppm,Sb2O3<100ppm. 2. If your company need halogen free product shall be note requirement green compound material on order for the halogen free product request.