PJP840 / PJF840 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 500V, RDS(ON)=0.9Ω@VGS=10V, ID=4A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 MECHANICAL DATA 2 G 3 D S 1 2 G 3 D S INTERNAL SCHEMATIC DIAGRAM • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE MARKING PACKAGE PACKING PJP840 P840 TO-220AB 50PCS/TUBE PJF840 F840 ITO-220AB 50PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R S ymb o l PJP840 PJF840 Uni ts D ra i n-S o urc e Vo lta g e V DS 500 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt ID 8 8 A P uls e d D ra i n C urre nt 1 ) ID M 32 32 A PD 125 1 .0 45 0 .3 6 W Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e Avalanche Energy with Single Pulse IAS=8.0A, VDD=72V, L=14mH T J ,T S TG -5 5 to +1 5 0 E AS 514 O C mJ Junction-to-Case Thermal Resistance R θJ C 1 .0 2 .7 8 O C /W Junction-to Ambient Thermal Resistance R θJ A 6 2 .5 100 O C /W Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE November 24,2009-REV.00 PAGE . 1 PJP840 / PJF840 ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS =0 V, I D =2 5 0 uA 500 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 4A - 0.62 0.9 Ω I DSS VDS=500V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 3 1 .5 - - 5 .9 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 13.4 - Turn-On D e la y Ti me t d (o n) - 18.8 26 Turn-On Ri s e Ti me tr - 32.6 42 - 8 4 .8 11 0 - 4 5 .2 60 - 11 0 0 1360 - 115 150 - 7.8 10 Turn-Off D e la y Ti me Turn-Off F a ll Ti me V D S =4 0 0 V, I D =8 A V GS =1 0 V VDD=250V , I D =8A VGS=10V , RG=25Ω t d (o ff) tf Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C o ss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 8 .0 A Ma x.P uls e d S o urc e C urre nt I SM - - - 32 A D i o d e F o rwa rd Vo lta g e V SD IS =8 A , V GS =0 V - - 1 .5 V Re ve rs e Re c o ve ry Ti me t rr - 270 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF =8 A d i /d t=1 0 0 A /us - 1 .8 9 - uC rr NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. November 24,2009-REV.00 PAGE . 2 PJP840 / PJF840 20 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VGS= 20V~ 7.0V 18 16 6.0V 14 12 10 8 5.0V 6 4 2 VDS =50V 10 TJ = 125oC 1 25oC -55oC 0.1 0 0 5 10 15 20 25 2 30 3 VDS - Drain-to-Source Voltage (V) 6 7 8 1.2 RDS(ON) - On Resistance(Ω Ω) RDS(ON) - On Resistance(Ω Ω) 1 0.9 0.8 VGS=10V 0.7 VGS = 20V 0.6 0.5 0 2 4 6 8 ID =4A 1.1 1 0.9 0.8 0.7 TJ =25oC 0.6 0.5 2 10 4 6 8 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Fig.3 On Resistance vs Drain Current 10 Fig.4 On Resistance vs Gate to Source Voltage 2000 VGS =10 V ID =4.0A f = 1MHz VGS = 0V 1600 C - Capacitance (pF) RDS(ON) - On-Resistance(Normalized) 5 Fig.2 Transfer Characteristric Fig.1 Output Characteristric 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 4 VGS - Gate-to-Source Voltage (V) Ciss 1200 800 400 Coss Crss 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature November 24,2009-REV.00 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJP840 / PJF840 Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 100 VGS = 0V IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 12 ID =8A 10 VDS=400V VDS=250V 8 VDS=100V 6 4 TJ = 125oC 1 25oC -55oC 0.1 2 0.01 0 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) Fig. 7 Gate Charge Waveform BVDSS - Breakdown Voltage(NORMALIZED) 10 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.8 Source-Drain Diode Forward Voltage 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature November 24,2009-REV.00 PAGE. 4 PJP840 / PJF840 LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. November 24,2009-REV.00 PAGE . 5