PJU1N60 T O- 25 1 600V N-Channel Enhancement Mode MOSFET FEATURES TO -2 5 1 • 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives G 1 2 D S3 MECHANICAL DATA • Case: TO-220AB / TO-251 Molded Plastic INTE RNA L S CHE M ATIC DIA GRA M • Terminals : Solderable per MIL-STD-750,Method 2026 2 Drain 3 S ource 1 ORDERING INFORMATION Gate TYPE MARKING PACKAGE PACKING PJU1N60 U1N60 TO-251 80PCS/TUBE Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R S ymb o l P J U1 N6 0 Uni ts D ra i n-S o urc e Vo lta g e V DS 600 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt ID 1 A P uls e d D ra i n C urre nt 1 ) ID M 4 .6 A PD 28 0 .2 2 W T J ,T S TG -5 5 to +1 5 0 IAS=1.1A, VDD=50V, L=95mH E AS 58 Junction-to-Case Thermal Resistance R θJ C 4 .5 O C /W Junction-to Ambient Thermal Resistance R θJ A 100 O C /W Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e Avalanche Energy with Single Pulse O C mJ Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE April 12,2010-REV.00 PAGE . 1 PJU1N60 ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS =0 V, I D =2 5 0 uA 600 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 0.5A - 8.3 11 Ω I DSS VDS=600V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 6 .2 7 .8 - 1 .4 4 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 3.32 - Turn-On D e la y Ti me t d (o n) - 10.2 14.8 Turn-On Ri s e Ti me tr - 5.6 8.0 - 16 22 - 1 0 .2 16 - 165 220 - 17 28 - 1.65 4.2 Turn-Off D e la y Ti me Turn-Off F a ll Ti me V D S = 4 8 0 V, ID = 1 .0 A V GS =1 0 V VDD=300V, I D =1.0A RG=25Ω , V GS =1 0 V t d (o ff) tf Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C o ss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 1 .0 A Ma x.P uls e d S o urc e C urre nt I SM - - - 4 .6 A D i o d e F o rwa rd Vo lta g e V SD IS =1 A , V GS =0 V - - 1 .5 V Re ve rs e Re c o ve ry Ti me t rr - 190 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF = 1 A d i /d t=1 0 0 A /us - 0 .5 - uC rr NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. April 12,2010-REV.00 PAGE . 2 PJU1N60 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 10 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VGS= 20V~ 7.0V 6.0V 5.0V VDS =40V 1 TJ = 125oC -55oC 0.01 0 2 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) RDS(ON) - On Resistance(Ω Ω) RDS(ON) - On Resistance(Ω Ω) 8 30 35 30 25 20 15 VGS=10V 10 VGS = 20V 5 ID =1A 25 20 15 10 TJ =25oC 5 0 0 0 0.5 1 1.5 2 ID - Drain Current (A) 2.5 3 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.4 On Resistance vs Gate to Source Voltage Fig.3 On Resistance vs Drain Current 300 VGS =10 V ID =1.0A ` C - Capacitance (pF) RDS(ON) - On-Resistance(Normalized) 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Fig.2 Transfer Characteristric Fig.1 Output Characteristric 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 25oC 0.1 f = 1MHz VGS = 0V 250 200 Ciss 150 100 Coss 50 Crss 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature April 12,2010-REV.00 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJU1N60 10 12 ID =1A IS - Source Current (A) VGS - Gate-to-Source Voltage (V) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise VDS=480V 10 VDS=300V 8 VDS=120V 6 1 TJ = 125oC 25oC 0.1 4 2 -55oC 0.01 0 0 1 2 3 4 5 Qg - Gate Charge (nC) 6 7 Fig. 7 Gate Charge Waveform BVDSS - Breakdown Voltage(Normalized) VGS = 0V 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.8 Source-Drain Diode Forward Voltage 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature April 12,2010-REV.00 PAGE. 4 PJU1N60 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. April 12,2010-REV.00 PAGE . 5