PJP10N60 / PJF10N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives ITO-220AB 1 MECHANICAL DATA 2 G 3 D S 1 2 G 3 S D INTERNAL SCHEMATIC DIAGRAM • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE MARKING PACKAGE PACKING PJP10N60 P10N60 TO-220AB 50PCS/TUBE PJF10N60 F10N60 ITO-220AB 50PCS/TUBE Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R S ymb o l P J P 1 0 N6 0 P J F 1 0 N6 0 Uni ts D ra i n-S o urc e Vo lta g e V DS 600 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt ID 10 10 A P uls e d D ra i n C urre nt 1 ) ID M 40 40 A PD 156 1 .2 5 50 0 .4 W Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e Avalanche Energy with Single Pulse IAS=10A, VDD=50V, L=10mH T J ,T S TG -5 5 to +1 5 0 E AS 500 O C mJ Junction-to-Case Thermal Resistance R θJ C 0 .8 2 .5 O C /W Junction-to Ambient Thermal Resistance R θJ A 6 2 .5 100 O C /W Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE March 31,2010-REV.00 PAGE . 1 PJP10N60 / PJF10N60 ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS =0 V, I D =2 5 0 uA 600 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 5.0A - 0.78 1.0 Ω I DSS VDS=600V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 4 1 .6 52 - 8 .6 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 14.2 - Turn-On D e la y Ti me t d (o n) - 16.2 22 Turn-On Ri s e Ti me tr - 18.6 32 - 4 0 .2 86 - 2 2 .8 38 - 1520 - - 140 - - 12.5 - Turn-Off D e la y Ti me Turn-Off F a ll Ti me V D S = 4 8 0 V, ID = 1 0 A , V GS =1 0 V t d (o ff) VDD=300V, I D =10A V GS =1 0 V, RG=25Ω tf Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C o ss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 10 A Ma x.P uls e d S o urc e C urre nt I SM - - - 40 A D i o d e F o rwa rd Vo lta g e V SD IS = 1 0 A , V GS =0 V - - 1 .4 V Re ve rs e Re c o ve ry Ti me t rr - 420 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF = 1 0 A d i /d t=1 0 0 A /us - 4 .2 - uC rr NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%. March 31,2010-REV.00 PAGE . 2 PJP10N60 / PJF10N60 20 100 VGS= 20V~ 6.0V 16 5.0V 12 8 4 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VDS =50V 10 TJ = 125oC 1 25oC 0.1 -55oC 0.01 0 0 2 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 4 1.5 1 VGS=10V 0.5 VGS = 20V RDS(ON) - On Resistance(Ω Ω) RDS(ON) - On Resistance(Ω Ω) 2 0 2 4 3 2 TJ =25oC 1 3 6 8 10 12 14 16 18 20 ID - Drain Current (A) Fig.3 On Resistance vs Drain Current 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.4 On Resistance vs Gate to Source Voltage 2800 VGS =10 V ID =5.0A f = 1MHz VGS = 0V 2400 C - Capacitance (pF) RDS(ON) - On-Resistance(Normalized) ID =5.0A 0 0 2.4 7 Fig.2 Transfer Characteristric Fig.1 Output Characteristric 2.8 3 4 5 6 VGS - Gate-to-Source Voltage (V) 2000 2 Ciss 1600 1.6 1200 1.2 800 0.8 400 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature March 31,2010-REV.00 C C C Coss Crss 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJP10N60 / PJF10N60 12 ID =10A 10 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VDS=480V VDS=300V 8 VDS=120V 6 4 2 10 VGS = 0V 1 TJ = 125oC 25oC -55oC 0.1 0.01 0 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) 40 45 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.8 Source-Drain Diode Forward Voltage Fig. 7 Gate Charge Waveform BVDSS - Breakdown Voltage(Normalized) 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (oC) 150 Fig.9 Breakdown Voltage vs Junction Temperature March 31,2010-REV.00 PAGE. 4 PJP10N60 / PJF10N60 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. March 31,2010-REV.00 PAGE . 5