FCP7N60N / FCPF7N60NT N-Channel SupreMOS® MOSFET 600 V, 6.8 A, 520 mΩ Features Description • RDS(on) = 460 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Ultra Low Gate Charge (Typ.Qg = 17.8 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 91 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD/LED TV and Monitor • Lighting • Solar Inverter • AC-DC Power Supply D TO-220 TO-220F G DS G GDS S MOSFET Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted Parameter ID Drain Current FCP7N60N FCPF7N60NT 600 Unit V ±30 V -Continuous (TC = 25oC) 6.8 6.8* -Continuous (TC = 100oC) 4.3 4.3* IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 6.8 A EAR Repetitive Avalanche Energy 0.6 mJ 100 V/ns dv/dt - Pulsed 20.4 20.4 (Note 2) Peak Diode Recovery dv/dt A 79.4 MOSFET dv/dt Ruggedness (Note 3) mJ 4.9 V/ns (TC = 25oC) 64.1 30.5 W - Derate above 25oC 0.51 0.24 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP7N60N FCPF7N60NT RθJC Thermal Resistance, Junction to Case 1.95 4.1 RθCS Thermal Resistance, Case to Heak Sink ( Typical) 0.5 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 1 Unit o C/W www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET March 2013 Device Marking FCP7N60N Device FCP7N60N Package TO-220AB Reel Size - Tape Width - Quantity 50 FCPF7N60NT FCPF7N60NT TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 1 mA, VGS = 0 V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 VDS = 480 V, VGS = 0 V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 ID = 1 mA, Referenced to 25oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 3.4 A - 0.46 0.52 Ω gFS Forward Transconductance VDS = 20 V, ID = 3.4 A - 8.5 - S VDS = 100 V, VGS = 0 V f = 1 MHz - 719 960 pF - 30 40 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 2.1 3.2 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 17 - pF Cosseff Effective Output Capacitance VDS = 0 V to 380 V, VGS = 0 V - 91 - pF Qg(tot) Total Gate Charge at 10V 17.8 35.6 nC Gate to Source Gate Charge VDS = 380 V,ID = 3.4 A VGS = 10 V - Qgs - 3.2 6.3 nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) (Note 4) Drain Open - 6.0 11.9 nC - 2.5 - Ω - 12 24 ns - 6 22 ns - 35 80 ns - 12 24 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 3.4 A RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 6.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20.4 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD =3.4 A - - 1.2 V trr Reverse Recovery Time - 211 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3.4 A dIF/dt = 100 A/μs - 1.8 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 6.8 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 2 www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 30 ID, Drain Current[A] ID, Drain Current[A] VGS = 15.0 V 10.0 V 6.0 V 4.5 V 4.0 V 10 Figure 2. Transfer Characteristics 60 *Notes: 1. 250μs Pulse Test 10 o 150 C o -55 C o 25 C 1 o 2. TC = 25 C 1 0.5 0.1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test 1 10 VDS, Drain-Source Voltage[V] 0.2 30 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 IS, Reverse Drain Current [A] 0.8 0.6 VGS = 10V VGS = 20V 0.4 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.1 0.4 0.2 0 4 8 12 ID, Drain Current [A] 16 20 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 Figure 6. Gate Charge Characteristics 10 10000 VGS, Gate-Source Voltage [V] *Note: 1. VGS = 0V 2. f = 1MHz 1000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.0 RDS(ON) [Ω], Drain-Source On-Resistance 4 6 VGS, Gate-Source Voltage[V] Ciss 100 Coss 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 VDS = 120V VDS = 380V VDS = 480V 8 6 4 2 Crss *Note: ID = 3.4A 0 1 10 100 VDS, Drain-Source Voltage [V] ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 0 600 3 3 6 9 12 15 Qg, Total Gate Charge [nC] 18 www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -80 160 Figure 9. Maximum Safe Operating Area _ FCP7N60N *Notes: 1. VGS = 10V 2. ID = 3.4A 0.5 -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area _ FCPF7N60NT 100 100 10 20μs ID, Drain Current [A] ID, Drain Current [A] 20μs 100μs 1ms 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 10 0.1 *Notes: o 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 10 100 VDS, Drain-Source Voltage [V] DC Operation in This Area is Limited by R DS(on) o 1 100μs 1ms 10ms 1 1. TC = 25 C 0.01 0.1 160 0.01 0.1 1000 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 150 4 www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) FCP7N60N / FCPF7N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve _ FCP7N60N Thermal Response [ZθJC] 3 1 0.5 0.2 0.1 PDM 0.05 0.1 0.02 0.01 Single pulse t1 PDM t2 *Notes: t1 o 1. ZθJC(t) t=2 1.95 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 -5 10 -4 10 -3 -2 -1 10 10 Rectangular Pulse Duration [sec] 10 _ FCPF7N60NT Figure 13. Transient Thermal Response Curve Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 t1 0.1 t2 0.02 0.01 *Notes: o 1. ZθJC(t) = 4.1 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 6 www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 7 www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 8 www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET Mechanical Dimensions TO-220F Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. C0 10 www.fairchildsemi.com FCP7N60N / FCPF7N60NT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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