FAIRCHILD FDPF12N60NZ

FDP12N60NZ / FDPF12N60NZ
N-Channel UniFETTM II MOSFET
600 V, 12 A, 650 m
Features
Description
• RDS(on) = 530 m (Typ.) @ VGS = 10 V, ID = 6 A
UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
• Low Gate Charge ( Typ. 26 nC)
• Low Crss ( Typ. 12 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D
G
G
D
S
TO-220
G
D
TO-220F
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP12N60NZ FDPF12N60NZ
600
Unit
V
±30
V
- Continuous (TC = 25oC)
12
12*
7.2
7.2*
ID
Drain Current
- Continuous (TC = 100oC)
IDM
Drain Current
- Pulsed
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
12
A
EAR
Repetitive Avalanche Energy
(Note 1)
24
mJ
20
V/ns
dv/dt
48
(Note 2)
Peak Diode Recovery dv/dt
48*
565
MOSFET dv/dt Ruggedness
(Note 3)
A
mJ
10
V/ns
(TC = 25oC)
240
39
W
- Derate above 25oC
2.0
0.3
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
(Note 1)
A
-55 to +150
oC
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP12N60NZ FDPF12N60NZ
RJC
Thermal Resistance, Junction to Case, Max.
0.52
3.2
RCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
62.5
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
1
Unit
oC/W
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
March 2013
Device Marking
FDP12N60NZ
Device
FDP12N60NZ
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF12N60NZ
FDPF12N60NZ
TO-220F
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TJ = 25oC
600
-
-
V
ID = 250A, Referenced to 25oC
-
0.6
-
V/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
-
-
1
VDS = 480V, TC = 125oC
-
-
10
A
IGSS
Gate to Body Leakage Current
VGS = ±30V, VDS = 0V
-
-
±10
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3
-
5
V
Static Drain to Source On Resistance
VGS = 10V, ID = 6A
-
0.53
0.65

gFS
Forward Transconductance
VDS = 20V, ID = 6A
-
13.5
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
1260
1676
pF
-
150
200
pF
-
12
18
pF
-
26
34
nC
-
6
-
nC
-
10
-
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 480V, ID = 12A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 300V, ID = 12A
RG = 25
(Note 4)
-
25
60
ns
-
50
110
ns
-
80
170
ns
-
60
130
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
12
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
48
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 12A
-
-
1.4
V
trr
Reverse Recovery Time
-
350
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 12A
dIF/dt = 100A/s
-
2.2
-
C
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =7.85mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
2
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
30
ID, Drain Current[A]
10
ID, Drain Current[A]
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1
o
10
150 C
o
25 C
o
-55 C
1
*Notes:
1. 250s Pulse Test
* Notes :
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.1
0.1
0.1
1
VDS, Drain-Source Voltage[V]
10
20
3
4
5
6
7
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.0
100
0.9
IS, Reverse Drain Current [A]
RDS(on) [],
Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.8
VGS = 10V
0.7
VGS = 20V
0.6
o
150 C
10
o
25 C
Notes:
1. VGS = 0V
o
2. 250s Pulse Test
* Note : TJ = 25 C
0.5
0
5
10
15
20
ID, Drain Current [A]
25
1
0.4
30
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
1000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Note:
1. VGS = 0V
2. f = 1MHz
10
0.1
1.4
10
Ciss
100
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
5000
Capacitances [pF]
8
1
10
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
Crss
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 12A
0
30
3
0
6
12
18
24
Qg, Total Gate Charge [nC]
30
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
* Notes :
1. VGS = 0V
2. ID = 250uA
0.8
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10V
2. ID = 6A
0.5
0
-80
160
Figure 9. Maximum Safe Operating Area
-FDPF12N60NZ
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Safe Operating Area
-FDP12N60NZ
100
100
10s
30s
100s
10
ID, Drain Current [A]
100s
ID, Drain Current [A]
160
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
0.1
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
* Notes :
0.1
o
o
1. TC = 25 C
1. TC = 25 C
o
o
2. TJ = 150 C
3. Single Pulse
2. TJ = 150 C
3. Single Pulse
0.01
0.01
1
10
100
VDS, Drain-Source Voltage [V]
1000
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs Case Temperature
15
ID, Drain Current [A]
12
9
6
3
0
25
50
75
100
125
o
TC, Case Temperature [ C]
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
150
4
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics (Continued)
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
Figure 12. Transient Thermal Response Curve
-FDPF12N60NZ
Thermal Response [ZJC]
5
0.5
1
0.2
0.1
0.05
0.1
0.02
P
0.01
DM
t
0.01
* Notes :
Single pulse
1
t
2
o
1. ZJC(t) = 3.2 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
-5
10
-4
10
-3
10
-2
-1
10
10
1
Rectangular Pulse Duration [sec]
2
10
10
3
10
Figure 13. Transient Thermal Response Curve
-FDP12N60NZ
Thermal Response [ZJC]
1
0.5
0.2
0.1
0.1
0.05
0.02
P
DM
t
0.01
1
t
0.01
2
* Notes :
Single pulse
o
1. ZJC(t) = 0.52 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
-5
10
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
-4
10
-3
10
-2
-1
10
10
1
Rectangular Pulse Duration [sec]
5
10
2
10
3
10
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
6
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
7
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
Mechanical Dimensions
TO-220B03
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
8
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
Package Dimensions
(Continued)
TO-220M03
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used here in:
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expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
10
www.fairchildsemi.com
FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET
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