FAIRCHILD FDPF12N50NZ

FDP12N50NZ / FDPF12N50NZ
N-Channel UniFETTM II MOSFET
500 V, 11.5 A, 520 m
Features
Description
• RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A
UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
• Low Gate Charge (Typ. 23 nC )
• Low Crss (Typ. 14 pF )
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D
G
G
D
S
TO-220
G
D
TO-220F
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDPF12N50NZ
500
±25
11.5
11.5*
- Continuous (TC = 100oC)
6.9
6.9*
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
Peak Diode Recovery dv/dt
- Pulsed
(Note 1)
46
Unit
V
V
- Continuous (TC = 25oC)
ID
A
46*
A
(Note 2)
560
Avalanche Current
(Note 1)
11.5
A
Repetitive Avalanche Energy
(Note 1)
17
mJ
(Note 3)
mJ
4.5
V/ns
(TC = 25oC)
170
42
W
- Derate above 25oC
1.37
0.33
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
FDP12N50NZ
-55 to +150
o
C
300
o
C
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP12N50NZ
FDPF12N50NZ
RJC
Thermal Resistance, Junction to Case, Max.
0.73
3.0
RCS
Thermal Resistance, Case to Sink Typ
0.5
-
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
62.5
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
1
Unit
oC/W
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
March 2013
Device Marking
FDP12N50NZ
Device
FDP12N50NZ
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF12N50NZ
FDPF12N50NZ
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.5
-
V/oC
A
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250A, VGS = 0V, TJ = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
1
VDS = 400V, TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±25V, VDS = 0V
-
-
±10
ID = 250A, Referenced to
25oC
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 5.75A
-
0.46
0.52

gFS
Forward Transconductance
VDS = 20V, ID = 5.75A
-
12
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
945
1235
pF
-
155
205
pF
-
14
20
pF
-
23
30
nC
-
5.5
-
nC
-
9.6
-
nC
-
20
50
ns
-
50
110
ns
-
60
130
ns
-
45
100
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
11.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
46
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
-
-
1.4
V
trr
Reverse Recovery Time
-
315
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/s
-
2.0
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 8.5mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 11.5A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
2
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
30
50
ID, Drain Current[A]
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5V
6.0 V
5.5 V
10
ID, Drain Current[A]
Figure 2. Transfer Characteristics
1
10
o
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
2. TC = 25 C
0.1
0.1
1
VDS, Drain-Source Voltage[V]
10
0.1
20
3
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
9
10
100
0.9
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
5
6
7
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.0
0.8
0.7
VGS = 10V
0.6
0.5
VGS = 20V
o
150 C
10
0
6
*Notes:
1. VGS = 0V
o
12
18
ID, Drain Current [A]
24
1
0.4
30
Figure 5. Capacitance Characteristics
2000
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
1000
500
1.4
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
2. 250s Pulse Test
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
2500
o
25 C
*Note: TC = 25 C
0.4
Capacitances [pF]
4
Coss
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
*Note: ID = 11.5A
0
30
0
3
5
10
15
20
Qg, Total Gate Charge [nC]
25
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics
Figure 8. On-Resistance Variation
vs. Temperature
1.20
2.8
1.15
2.4
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250uA
0.90
0.85
-100
-50
0
50
100
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
Figure 7. Breakdown Voltage Variation
vs. Temperature
2.0
1.6
1.2
*Notes:
1. VGS = 10V
2. ID = 5.75A
0.8
0.4
-75 -50
150
Figure 9. Maximum Safe Operating Area
- FDPF12N50NZ
0
50
100
o
TJ, Junction Temperature [ C]
150
Figure 10.Maximum Safe Operating Area
- FDP12N50NZ
100
100
30s
10s
100s
100s
ID, Drain Current [A]
ID, Drain Current [A]
10
1ms
10ms
100 ms
DC
1
Operation in This Area
is Limited by RDS(on)
*Notes:
o
0.1
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
* Notes :
0.1
1. TC = 25 C
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
0.01
1000
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs. Case Temperature
12
ID, Drain Current [A]
10
8
6
4
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
150
4
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics (Continued)
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDP12N50NZ
Thermal Response [ZJC]
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
PDM
t1
t2
* Notes :
Single pulse
o
1. ZJC(t) = 0.73 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
-5
10
-4
-3
10
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
1
10
Figure 13. Transient Thermal Response Curve - FDPF12N50NZ
ZJC(t), Thermal Response
5
D=0.5
1
0.2
PDM
0.1
t1
0.05
t2
-1
10
0.02
*Notes:
0.01
o
1. ZJC(t) = 3.0 C/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZJC(t)
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
10
t1, Square Wave Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
5
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
6
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
7
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
Mechanical Dimensions
TO-220B03
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
8
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
10
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET
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