2SC4853A Ordering number : ENA1076 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) :⏐S21e⏐2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO 12 V 6 V VEBO IC 1.5 V 15 mA Junction Temperature PC Tj Storage Temperature Tstg 90 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Symbol Conditions Ratings min typ max Unit ICBO IEBO VCB=5V, IE=0A 1.0 μA Emitter Cutoff Current VEB=1V, IC=0A 10 μA DC Current Gain hFE VCE=1V, IC=1mA 60* 270* * : The 2SC4853A is classified by 1mA hFE as follows : Marking Rank hFE CN3 3 60 to 120 CN4 4 90 to 180 CN5 5 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network D2408AB MS IM TC-00001797 No. A1076-1/5 2SC4853A Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Output Capacitance Cob VCE=1V, IC=1mA VCB=1V, f=1MHz Forward Transfer Gain 2 ⏐S21e⏐ 1 2 S21e ⏐ ⏐2 VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz NF1 VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz Noise Figure Ratings Conditions NF2 min typ Unit max 5 GHz 0.6 4.5 1.0 pF 7 dB 10.5 dB 2.6 4.5 dB 1.9 dB Package Dimensions 0.3 0.15 0.2 0.425 unit : mm (typ) 7023-009 3 0.425 2.1 1.25 0 to 0.1 1 2 0.65 0.65 0.3 0.6 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP IC -- VCE 20 hFE -- IC 1000 7 18 150μA 14 10 105μA 90μA 75μA 8 60μA 6 45μA 12 4 1 0 2 3 4 Collector-to-Emitter Voltage, VCE -- V IT14232 5 10 0.1 2 3 5 7 1.0 VC 5 =2 E V 3 1V 2 1.0 7 5 3 5 7 10 2 3 IT14233 Cob -- VCB 2 7 2 Collector Current, IC -- mA fT -- IC 10 3 2 7 2 6 VCE=2V 1V 100 3 5 2 2 15μA IB=0μA 0 3 30μA 2 Gain-Bandwidth Product, fT -- GHz DC Current Gain, hFE 120μA 135μA Output Capacitance, Cob -- pF Collector Current, IC -- mA 5 16 f=1MHz 1.0 7 5 3 2 0.1 7 3 5 7 1.0 2 3 5 Collector Current, IC -- mA 7 2 10 ITR07582 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 ITR07583 Collector-to-Base Voltage, VCB -- V No. A1076-2/5 2SC4853A NF -- IC 10 Forward Transfer Gain,⏐S21e⏐2 -- dB f=1GHz 6 4 V CE =1 V Noise Figure, NF -- dB 8 2 0 2 ⏐S21e⏐2 -- IC 14 2V f=1GHz 12 V =2 E 10 VC 1V 8 6 4 2 0 3 5 7 2 1.0 3 7 5 2 10 Collector Current, IC -- mA ⏐S21e⏐2, NF -- V 2 5 7 2 1.0 3 5 Collector Current, IC -- mA CE 14 3 ITR07585 PC -- Ta 100 f=1GHz 7 ITR07584 90 IC=3mA Collector Dissipation, PC -- mW ⏐S21e⏐2, NF -- dB 12 10 ⏐S21e⏐ 2 1mA 8 6 4 IC=1mA NF 2 3mA 0 0 80 70 60 50 40 30 20 10 0 1 2 3 4 5 6 Collector-to-Emitter Voltage, VCE -- V 7 ITR07586 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT14234 No. A1076-3/5 2SC4853A S Parameters S11e f=200MHz to 2000MHz(200MHz Step) S21e f=200MHz to 2000MHz(200MHz Step) 90° j50 120° j25 j150 150° j200 j250 j10 10 25 50 100 150 250 Hz G 0.2 ±180° 2.0GH z 0 60° j100 VCE=2V IC=3mA --j10 VCE=2V IC=3mA 30° V =1 V CE=1mA IC Hz 2G . 0 z GH 2.0 2 4 8 6 0 0.2GHz --j250 --j200 --j150 V C IC = E =1V 1m A --30° --150° --j100 --j25 --60° --120° --j50 --90° ITR07588 S12e f=200MHz to 2000MHz(200MHz Step) ITR07589 S22e f=200MHz to 2000MHz(200MHz Step) 90° j50 60° 120° j25 150° Hz 2G 0. ±180° j100 GH z j150 30° j200 j250 j10 V =2 E mA C V =3 IC 0.05 0.10 0.15 0.20 0 0 0.2 20 10 2.0G --j10 --30° --150° 0.5 Hz V =1 V CE=1mA IC 2.0 --j25 100 VCE=2V IC=3mA Hz G 0.2 --j250 --j200 --j150 VCE=1V IC=1mA --j100 --60° --120° --90° ITR07590 --j50 ITR07591 No. A1076-4/5 2SC4853A S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 200 0.940 --17.9 3.228 159.6 0.058 77.1 0.972 --12.2 400 0.863 --33.7 2.983 143.7 0.107 66.6 0.914 --22.7 600 0.778 --48.0 2.732 129.9 0.145 58.1 0.844 --31.7 800 0.698 --60.5 2.469 117.7 0.173 50.9 0.773 --39.6 1000 0.608 --73.5 2.320 106.2 0.195 45.4 0.717 --46.0 1200 0.546 --84.7 2.106 96.3 0.210 40.9 0.668 --51.7 1400 0.470 --96.2 1.977 87.1 0.129 37.6 0.624 --56.5 1600 0.418 --106.4 1.826 78.8 0.224 35.3 0.590 --60.6 1800 0.388 --117.3 1.700 72.2 0.230 33.8 0.562 --64.3 2000 0.354 --127.0 1.615 65.9 0.234 32.9 0.546 --67.5 VCE=2V, IC=3mA, ZO=50Ω Freq(MHz) ⏐S11⏐ ∠S11 ⏐S21⏐ ∠S21 ⏐S12⏐ ∠S12 ⏐S22⏐ ∠S22 200 0.839 --30.6 7.428 149.3 0.050 71.4 0.916 --18.3 400 0.672 --53.7 6.016 128.5 0.083 60.6 0.778 --30.2 600 0.536 --71.7 4.908 113.6 0.105 55.1 0.672 --37.1 800 0.431 --85.7 4.073 101.9 0.121 52.5 0.597 --41.9 1000 0.360 --99.0 3.494 92.7 0.135 51.4 0.548 --45.7 1200 0.310 --111.4 3.033 84.4 0.150 50.9 0.514 --49.2 1400 0.265 --122.6 2.694 77.4 0.162 50.9 0.492 --52.3 1600 0.242 --134.7 2.422 70.9 0.175 51.0 0.475 --55.6 1800 0.228 --148.0 2.205 65.9 0.189 51.1 0.461 --59.0 2000 0.217 --157.2 2.061 60.8 0.205 51.0 0.456 --61.8 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1076-5/5