2SK4085LS Ordering number : ENA0553D SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4085LS General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)=0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (Pulse) V ±30 V Limited only by maximum temperature Tch=150°C 16 A IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 11 A IDP PW≤10μs, duty cycle≤1% 60 A 2.0 W IDc *1 Drain Current (DC) Unit 500 Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 141 mJ 16 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=1mH, IAV=16A (Fig.1) *5 L≤1mH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 Marking Electrical Connection 6.68 3.3 2.54 3.23 K4085 LOT No. 2.76 1 12.98 15.8 15.87 2 1.47 MAX 0.8 3 1 2.54 2 3 0.5 2.54 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS http://semicon.sanyo.com/en/network 40412 TKIM TC-00002743/O1007 TIIM TC-00000927/40407QB TIIM TC-00000628/22107QB TIIM TC-00000556 No. A0553-1/5 2SK4085LS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time td(on) tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings Conditions min Unit max 500 VDS=10V, ID=1mA V 100 μA ±100 nA 3 VDS=10V, ID=8A ID=8A, VGS=10V 5 4.5 V 9 S 0.33 VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=16A 0.43 Ω 1200 pF 250 pF 55 pF 26.5 ns 78 ns 146 ns 57 ns 46.6 nC 8.2 nC 27.4 IS=16A, VGS=0V Fig.1 Avalanche Resistance Test Circuit nC 0.95 1.3 V Fig.2 Switching Time Test Circuit VIN L VDD=200V 10V 0V ≥50Ω RG ID=8A RL=25Ω VIN D 2SK4085LS 10V 0V typ VDD 50Ω VOUT PW=10μs D.C.≤0.5% G 2SK4085LS P.G ID -- VDS 45 Tc=25°C 15V 35 8V 30 25 20 15 10 10 15 20 25 Drain-to-Source Voltage, VDS -- V 75°C 25 20 15 5 VGS=5V 5 30 10 6V 5 Tc= --25°C 25°C 40 Drain Current, ID -- A 35 Drain Current, ID -- A VDS=20V 10V 0 ID -- VGS 45 40 0 RGS=50Ω S 30 IT11732 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT11733 No. A0553-2/5 2SK4085LS RDS(on) -- VGS Tc=75°C 25°C --25°C 0.2 3 5 7 9 11 13 10 = Tc --2 °C 75 2 A =8 ID 0.4 0.3 0.2 0.1 --25 1.0 7 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 5 75 100 125 150 IT11735 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 0.4 0.6 0.8 1.0 1.2 1.4 Diode Forward Voltage, VSD -- V IT11737 Ciss, Coss, Crss -- VDS 10000 7 5 VDD=200V VGS=10V 7 50 VGS=0V IT11736 SW Time -- ID 1000 3 25 IS -- VSD 3 2 5 3 0.1 0 3 2 5°C 3 0.5 =1 S , VG Case Temperature, Tc -- °C Source Current, IS -- A 5 0V 5 °C 25 7 0.6 IT11734 VDS=10V 2 0.7 0 --50 15 | yfs | -- ID 3 0.8 --25°C 0.4 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.8 0 f=1MHz 3 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.9 1.0 0.6 RDS(on) -- Tc 1.0 ID=8A Tc=7 5°C 25°C 1.2 td (off) 2 100 7 tf tr 5 Ô td(on) 3 2 Ô Ciss 1000 7 5 CossÔ 3 2 100 7 5 CrsÔ s 3 2 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 10 7 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 10 20 30 Total Gate Charge, Qg -- nC 0 5 10 40 50 IT11740 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V VDS=200V ID=16A 9 Gate-to-Source Voltage, VGS -- V 5 IT11738 VGS -- Qg 10 3 10 7 5 3 2 1 10 0ms DC 0m IDpack(*2)=11A s op era tio n Operation in this area is limited by RDS(on). 1.0 7 5 3 2 0.1 7 5 3 2 10 10 Tc=25°C Single pulse 0.01 1.0 2 3 50 IT11739 ASO IDP=60A(PW≤10μs) IDc(*1)=16A 45 μs 0μ s 1m s *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 71000 IT16814 No. A0553-3/5 2SK4085LS PD -- Ta 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT11730 EAS -- Ta 120 PD -- Tc 45 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11742 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0553-4/5 2SK4085LS Note on usage : Since the 2SK4085LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2012. Specifications and information herein are subject to change without notice. PS No. A0553-5/5