BMS3004 Ordering number : ENA1908A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3004 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=6.5mΩ (typ.) Input capacitance Ciss=13400pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) PW≤10μs, duty cycle≤1% Unit --75 V ±20 V --68 A --272 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 380 mJ --54 A Avalanche Current *2 Tc=25°C Note : *1 VDD=--48V, L=100μH, IAV=--54A (Fig.1) *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7529-001 • Package • JEITA, JEDEC • Minimum Packing Quantity 4.7 10.16 3.18 Electrical Connection 2 15.87 A 3.23 MS3004 LOT No. 1 2.76 12.98 1.47 MAX DETAIL-A 0.8 1 2 3 FRAME EMC 2.54 2.54 3 (0.84) 0.5 ( 1.0) 15.8 Marking 6.68 3.3 2.54 : TO-220F-3SG : SC-67 : 50 pcs./magazine 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3SG http://semicon.sanyo.com/en/network 41112QA TKIM TC-00002740/10511QA TKIM TC-00002547 No. A1908-1/5 BMS3004 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--75V, VGS=0V typ Unit max --75 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--34A 120 RDS(on)1 ID=--34A, VGS=--10V 6.5 8.5 mΩ RDS(on)2 ID=--34A, VGS=--4V 8.3 11.4 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss --1.2 --10 μA ±10 μA --2.6 VDS=--20V, f=1MHz V S 13400 pF 1000 pF Reverse Transfer Capacitance Crss 740 pF Turn-ON Delay Time td(on) 70 ns Rise Time tr 245 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=--68A, VGS=0V Reverse Recovery Time trr See Fig.3 146 ns Reverse Recovery Charge Qrr IS=--68A, VGS=0V, di/dt=--100A/μs 470 nC See Fig.2 ns 300 nC 30 nC 70 L 0V --10V BMS3004 50Ω --1.5 V VDD= --48V VIN ID= --34A RL=1.4Ω VIN S nC --0.9 Fig.2 Switching Time Test Circuit ≥50Ω RG G 0V --10V ns 650 VDS=--48V, VGS=--10V, ID=--68A Fig.1 Avalanche Resistance Test Circuit D 1400 VDD D PW=10μs D.C.≤1% VOUT G P.G BMS3004 50Ω S Fig.3 Reverse Recovery Time Test Circuit BMS3004 D L G S VDD Driver MOSFET No. A1908-2/5 BMS3004 VDS= --10V 4V -- --120 --60 --40 --80 --60 Tc=7 5°C --80 --100 --40 --0.6 --0.8 --1.0 --1.2 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --34A Single pulse 18 16 14 12 10 Tc=75°C 8 25°C 6 --25°C 4 2 0 0 --1 --2 --3 --4 --5 --6 --7 --8 2 °C 25 3 C 5° --2 = Tc °C 75 10 7 5 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 tr 100 7 5 td(on) 3 12 °C 4A = --3 , ID V 4A 4 == --3 , ID VGS V 0 1 = -VGS 10 8 6 4 2 --25 0 25 50 75 100 125 150 IT16255 IS -- VSD VGS=0V Single pulse --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 100000 7 5 --1.4 IT16257 f=1MHz Ciss 3 2 Coss 1000 7 5 Crss 3 2 2 10 --0.1 --5.0 IT16253 10000 7 5 tf 3 2 --4.5 14 --0.1 7 5 3 2 --0.01 Ciss, Coss, Crss -- pF 1000 7 5 --4.0 16 3 2 td(off) --3.5 Single pulse --1000 7 5 3 2 5 7 --100 VDD= --48V VGS= --10V --3.0 18 IT16256 SW Time -- ID 10000 7 5 --2.5 Case Temperature, Tc -- °C 2 3 --2.0 RDS(on) -- Tc 0 --50 3 2 --1.5 20 --10 3 1.0 --0.1 Switching Time, SW Time -- ns --9 VDS= --10V 2 --1.0 IT16254 | yfs | -- ID 100 7 5 --0.5 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 1000 7 5 0 IT16252 RDS(on) -- VGS 20 0 --1.4 25°C --0.4 Tc= 75°C --0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --25 --20 --20 0 25 °C VGS= --3V --25°C --100 Drain Current, ID -- A --1 Drain Current, ID -- A 0V --120 ID -- VGS --140 --6 V --8 V Tc=25°C Tc= --25 °C 75°C 25° C ID -- VDS --140 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT16258 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT16259 No. A1908-3/5 BMS3004 VGS -- Qg --10 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --6 --5 --4 --3 --1 0 50 100 150 200 250 Total Gate Charge, Qg -- nC PD -- Ta 1.5 1.0 0.5 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C EAS -- Ta Avalanche Energy derating factor -- % 120 2 3 140 160 IT16249 0μ s 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V PD -- Tc 45 2.0 1m s 1 10 0ms 0m DC s op era tio n Tc=25°C Single pulse IT16260 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 Operation in this area is limited by RDS(on). --0.1 --0.1 300 10 μs 10 ID= --68A --10 7 5 3 2 --1.0 7 5 3 2 --2 0 IDP= --272A (PW≤10μs) --100 7 5 3 2 --7 0 ASO --1000 7 5 3 2 VDS= --48V ID= --68A 5 7 --100 IT16261 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16250 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16251 No. A1908-4/5 BMS3004 Note on usage : Since the BMS3004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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