SMP3003 Ordering number : ENA1655A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SMP3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=6.2mΩ (typ.) Input capacitance Ciss=13400pF 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% Unit --75 V ±20 V --100 A --400 A 90 W 150 °C Tc=25°C Channel Temperature PD Tch Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 468 mJ --60 A Avalanche Current *2 Note : *1 VDD=--48V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7001-003 • Package • JEITA, JEDEC : SMP-FD : SC-83, TO-220SMD SOT-404, D2PAK • Minimum Packing Quantity : 1000 pcs./reel 4.5 0.2 10.2 1.3 3.0 1 2 Marking MP3003 1.4 1.35 8.8 9.9 1.5M AX Packing Type: DL DL LOT No. 3 0.8 0 t o 0.3 1.2 2.55 0.4 2.55 Electrical Connection 2.7 2 2.55 1 : Gate 2 : Drain 3 : Source 2.55 SANYO : SMP-FD 1 3 http://semicon.sanyo.com/en/network O1211 TKIM TC-00002654/21710QA TKIM TC-00002253 No. A1655-1/5 SMP3003 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions V(BR)DSS IDSS min --75 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--75V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--50A --1.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--50A, VGS=--10V ID=--50A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance typ Unit max V --10 μA ±10 μA --2.6 140 V S 6.2 8.0 mΩ 8.0 11 mΩ 13400 pF 1000 pF Crss 740 pF 95 ns Rise Time td(on) tr 1000 ns Turn-OFF Delay Time td(off) 800 ns Fall Time tf 820 ns Total Gate Charge Qg 280 nC VDS=--20V, f=1MHz See Fig.2 Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD trr IS=--100A, VGS=0V See Fig.3 --1.0 Reverse Recovery Time 120 ns Reverse Recovery Charge Qrr IS=--100A, VGS=0V, di/dt=--100A/μs 380 nC VDS=--48V, VGS=--10V, ID=--100A Fig.1 Avalanche Resistance Test Circuit nC nC --1.5 V Fig.2 Switching Time Test Circuit L 0V --10V ≥50Ω RG VDD= --48V VIN ID= --50A RL=0.96Ω VIN SMP3003 0V --10V 50 55 VDD 50Ω D PW=10μs D.C.≤1% VOUT G P.G SMP3003 50Ω S Fig.3 Reverse Recovery Time Test Circuit SMP3003 D L G S VDD Driver MOSFET No. A1655-2/5 SMP3003 --140 --120 --100 --80 --60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --60 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 ID= --50A Single pulse 16 14 12 10 Tc=75°C 8 25°C 6 --25°C 4 2 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 2 °C --25 Tc= C 75° 1.0 7 5 3 2 0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 2 td (off) tr 100 td(on) 2 3 5 7 --1.0 2 3 75°C 25°C °C --25 --4.5 --5.0 IT16500 Single pulse 16 14 12 50A = -I D , 0A 4V = -= --5 VGS -10V, I D =VGS 10 8 6 4 2 0 --25 25 50 75 100 125 IS -- VSD --1000 7 5 3 2 150 IT16502 VGS=0V Single pulse --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Diode Forward Voltage, VSD -- V IT16504 Ciss, Coss, Crss -- VDS 100000 7 5 f=1MHz 2 Ciss 3 2 Coss 1000 7 5 Crss 3 2 7 5 --0.1 --4.0 Case Temperature, Tc -- °C Ciss, Coss, Crss -- pF 3 2 --3.5 10000 7 5 tf 5 --3.0 3 1000 7 --2.5 18 0 --50 5 7 --100 VDD= --48V VGS= --10V --2.0 RDS(on) -- Tc IT16503 SW Time -- ID 3 --1.5 20 Source Current, IS -- A 5°C 10 7 5 3 2 --1.0 Gate-to-Source Voltage, VGS -- V --10 VDS= --10V 100 7 5 3 2 --0.5 IT16501 | yfs | -- ID 1000 7 5 3 2 0 IT16499 RDS(on) -- VGS 18 0 --2.0 Tc=7 5°C 25°C --25°C --0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 20 Forward Transfer Admittance, | yfs | -- S --80 --20 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns --100 --40 VGS= --3V --20 0 --120 25° C --40 --140 Tc= 75° C --1 --160 Drain Current, ID -- A Drain Current, ID -- A --160 VDS= --10V --180 --4V 0V --180 ID -- VGS --200 --6 V --8 V Tc=25°C Tc= --2 5°C ID -- VDS --200 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT15359 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT16505 No. A1655-3/5 SMP3003 VGS -- Qg --10 --9 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --1000 7 5 3 2 VDS= --48V ID= --100A --7 --6 --5 --4 --3 --2 --1 0 0 50 100 150 200 250 Total Gate Charge, Qg -- nC PD -- Tc 350 70 60 50 40 30 20 10 20 40 60 80 100 ID= --100A --10 7 5 3 2 1m 10 s m DC 100m s op s era tio n 120 Case Temperature, Tc -- °C 140 160 IT15361 0μ s 10 μs Operation in this area is limited by RDS(on). --1.0 7 5 3 2 Tc=25°C 2 3 5 7 --10 2 3 5 7--100 2 IT15360 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 80 0 PW≤10μs 10 IT16506 90 0 IDP= --400A --0.1 Single pulse 5 7 --1.0 --0.1 2 3 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 100 300 --100 7 5 3 2 ASO 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT14184 No. A1655-4/5 SMP3003 Note on usage : Since the SMP3003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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