2SK4179 Ordering number : ENA1269 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4179 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 75 V ±20 V ID 80 A 320 A Drain Current (Pulse) IDP Allowable Power Dissipation PD PW≤10μs, duty cycle≤1% Tc=25°C 1.75 W 70 W °C Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single pulse) *1 EAS 100 mJ Avalanche Current *2 IAV 48 A Note : *1 VDD=30V, L=50μH, IAV=48A *2 L≤50μH, Single pulse Marking : K4179 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72308QA TI IM TC-00001515 No. A1269-1/5 2SK4179 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=40A RDS(on) Ciss ID=40A, VGS=10V VDS=20V, f=1MHz Coss VDS=20V, f=1MHz VDS=20V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time min ID=1mA, VGS=0V VDS=75V, VGS=0V VGS(off) ⏐yfs⏐ Output Capacitance Ratings Conditions typ Unit max 75 V 1 ±10 2 21 4 35 μA μA V S 10.5 13.7 mΩ 5400 pF 480 pF 350 pF See specified Test Circuit. 62 ns See specified Test Circuit. 335 ns See specified Test Circuit. 220 ns See specified Test Circuit. 160 ns 100 nC 30 nC 1.07 Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=80A VDS=30V, VGS=10V, ID=80A VDS=30V, VGS=10V, ID=80A Diode Forward Voltage VSD IS=80A, VGS=0V 28 nC 1.5 V Package Dimensions unit : mm (typ) 7507-002 4.5 10.2 3.6 (5.6) 18.0 15.1 2.7 1.3 6.3 5.1 0.8 14.0 1.2 0.4 1 2 3 2.7 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=30V VIN 10V 0V L ID=40A RL=0.75Ω VIN D ≥50Ω VOUT PW=10μs D.C.≤1% 2SK4179 10V 0V G 50Ω VDD 2SK4179 P.G 50Ω S No. A1269-2/5 2SK4179 120 6V 100 80 60 VGS=5V 40 1.0 1.5 2.0 2.5 Tc = 0 24 22 20 18 Tc=75°C 16 14 12 25°C 10 --25°C 8 6 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 5 7 5 3 2 1.0 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 0 25 50 75 100 125 150 IT13867 IS -- VSD 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Diode Forward Voltage, VSD -- V 1.6 IT13869 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 Ciss 5 Ciss, Coss, Crss -- pF td(off) 3 2 tf 100 tr 7 td(on) 5 3 0.1 --25 VGS=0V Single pulse 0 VDD=30V VGS=10V 8 IT13865 5 5 7 100 IT13868 SW Time -- ID 7 7 10 Source Current, IS -- A C 5° --2 = °C Tc 75 6 15 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 °C 25 5 Case Temperature, Tc -- °C ⏐yfs⏐ -- ID 10 20 IT13866 VDS=10V 2 4 VGS=10V ID=40A Single pulse 0 --50 10 3 3 RDS(on) -- Tc 25 2 0 4 2 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 26 1 IT13864 ID=40A Single pulse 28 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3.0 RDS(on) -- VGS 30 Forward Transfer Admittance, ⏐yfs⏐ -- S 40 °C 25°C --25°C 0.5 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 60 Tc=7 5 0 5 80 0 0 7 100 20 20 100 120 25° C 140 7V Drain Current, ID -- A Drain Current, ID -- A 8V VDS=10V 25° --25°C C V 10 140 ID -- VGS 160 75 °C Tc=25°C Tc= --25° C 75° C ID -- VDS 160 3 2 1000 7 Coss 5 Crss 3 2 100 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT13870 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT13871 No. A1269-3/5 2SK4179 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 20 40 60 80 100 Total Gate Charge, Qg -- nC 1m 10 s 10 ms 0m s 100 7 5 3 2 10 7 5 3 2 Operation in this area is limited by RDS(on). 1.0 7 5 3 2 1.5 1.0 0.5 0μ DC op 10 μs s er ati on Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 3 2 5 7 100 IT13873 PD -- Tc 80 1.75 10 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 120 PW≤10μs ID=80A IT13872 0 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 Ambient Temperature, Tc -- °C 160 IT13874 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT13875 EAS -- Ta 120 Avalanche Energy derating factor -- % IDP=320A 0.1 0.1 PD -- Ta 2.0 ASO 1000 7 5 3 2 VDS=30V ID=80A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT12429 No. A1269-4/5 2SK4179 Note on usage : Since the 2SK4179 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1269-5/5