BBS3002 Ordering number : ENA1357A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BBS3002 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=4.4mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% --60 V ±20 V --100 A --400 A 90 W 150 °C Tc=25°C Channel Temperature PD Tch Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 340 mJ --60 A Avalanche Current *2 Note : *1 VDD=--30V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7535-001 • Package : TO-263-2L • JEITA, JEDEC : SC-83, TO-263 • Minimum Packing Quantity : 800 pcs./reel 4.5 1.4 3.0 1.75 5.3 Electrical Connection 2, 4 0.9 7.9 4 8.0 1.3 9.2 13.4 1.2 10.0 0.254 1.27 0.8 LOT No. 1 0.5 2.4 2.54 0 to 0.25 2.54 BS3002 2 3 1.35 1 Marking 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 SANYO : TO-263-2L http://semicon.sanyo.com/en/network 12512 TKIM TC-00002684/N1208QA MSIM TC-00001708 No. A1357-1/4 BBS3002 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings Conditions V(BR)DSS IDSS min typ --60 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--50A --1.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--50A, VGS=--10V ID=--50A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Unit max V --1 μA ±10 μA --2.6 54 V 90 S 4.4 5.8 mΩ 6.4 9.0 mΩ 13200 pF 1300 pF Crss 950 pF 95 ns Rise Time td(on) tr 1000 ns Turn-OFF Delay Time td(off) 800 ns Fall Time tf 820 ns Total Gate Charge Qg 280 nC IS=--100A, VGS=0V Fig.1 Avalanche Resistance Test Circuit --1.0 0V --10V ≥50Ω RG D ID -- VDS BBS3002 5°C Tc= -2 --140 VGS= --3V --20 --80 --60 5°C --60 --100 --40 --20 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 IT14173 0 Tc= 7 --80 --120 C --100 --160 25° Drain Current, ID -- A --120 0 VDS= --10V 0 --0.5 --1.0 --1.5 --2.0 --2.5 --25 V --6 --8 V V --4V S ID -- VGS --180 --40 50Ω --200 Tc=25°C --1 0 Drain Current, ID -- A --160 VOUT G P.G --140 ID= --50A RL=0.6Ω PW=10μs D.C.≤1% VDD 50Ω --180 V VDD= --30V VIN VIN BBS3002 --200 --1.5 Fig.2 Switching Time Test Circuit L 0V --10V nC nC 75°C VSD 50 55 C Diode Forward Voltage VDS=--30V, VGS=--10V, ID=--100A 25° Qgs Qgd See Fig.2 °C Gate-to-Source Charge Gate-to-Drain “Miller” Charge VDS=--20V, f=1MHz --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V --4.5 --5.0 IT14174 No. A1357-2/4 BBS3002 RDS(on) -- VGS 16 14 12 10 8 Tc=75°C 6 25°C 4 --25°C 2 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V °C 25 3 °C -25 = Tc °C 75 2 10 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 25 50 100 125 150 IT14176 IS -- VSD 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT14178 Ciss, Coss, Crss -- VDS 3 f=1MHz 2 Ciss 2 td(off) Ciss, Coss, Crss -- pF 10000 1000 7 tf 5 3 2 tr 100 7 5 3 2 Coss Crss 1000 td(on) 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A Drain Current, ID -- A --7 --6 --5 --4 --3 --2 --1 50 100 150 200 Total Gate Charge, Qg -- nC --5 250 300 IT14181 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --1000 7 5 3 2 --8 0 0 IT14179 VDS= --30V ID= --100A --9 5 5 7 --100 VGS -- Qg --10 0 75 VGS=0V Single pulse IT14177 7 Gate-to-Source Voltage, VGS -- V 0 --25 Case Temperature, Tc -- °C VDD= --30V VGS= --10V 3 2 0 --50 SW Time -- ID 5 Switching Time, SW Time -- ns 5 7 --100 0A --5 I = 0V, D 1 = VGS Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 100 7 5 = -, ID --4V 4 --10 VDS= --10V 2 = VGS 6 IT14175 | yfs | -- ID 3 50A 8 5°C --3 10 Tc= 7 0 --2 Single pulse --25° C 18 RDS(on) -- Tc 12 25°C ID= --50A Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 20 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 ASO IDP= --400A PW≤10μs 10 0μ ID= --100A 1m s 10 --30 IT14180 10 μs s m DC Operation in this area is limited by RDS(on). 10 s 0m s op er ati on Tc=25°C --0.1 Single pulse 2 3 5 7 --1.0 --0.1 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT14182 No. A1357-3/4 BBS3002 PD -- Tc 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 EAS -- Ta 120 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 100 120 Case Temperature, Tc -- °C 140 160 IT14183 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT14184 Note on usage : Since the BBS3002 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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