CPH6332 Ordering number : ENA0726 SANYO Semiconductors DATA SHEET CPH6332 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V --6 A Drain Current (DC) ID Drain Current (Pulse) Allowable Power Dissipation IDP PD V PW≤10µs, duty cycle≤1% --24 A Mounted on a ceramic board (900mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0V VDS=--20V, VGS=0V Ratings min typ --20 V Forward Transfer Admittance VGS(off) yfs VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--3A ID=--3A, VGS=--4V ID=--1.5A, VGS=--2.5V 27 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 ID=--0.6A, VGS=--1.8V Cutoff Voltage Marking : YJ Unit max --0.4 5.8 --1 µA ±10 µA --1.4 V 9.6 S 36 mΩ 36 51 mΩ 58 88 mΩ Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31407PE TI IM TC-00000510 No. A0726-1/4 CPH6332 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Ratings Conditions min typ VDS=--10V, f=1MHz VDS=--10V, f=1MHz Unit max 1500 pF 230 pF VDS=--10V, f=1MHz See specified Test Circuit. 180 pF 17 ns 135 ns ns Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr td(off) See specified Test Circuit. See specified Test Circuit. 110 tf See specified Test Circuit. 140 ns Turn-OFF Delay Time Fall Time Qg VDS=--10V, VGS=--4V, ID=--6A 12 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--4V, ID=--6A VDS=--10V, VGS=--4V, ID=--6A 2.7 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--6A, VGS=0V Total Gate Charge 3.7 Package Dimensions ID= --3A RL=3.3Ω VIN 4 0.2 0.6 0V --4V 0.15 2.9 D VOUT PW=10µs D.C.≤1% 0.05 1.6 2.8 V VDD= --10V VIN 5 --1.5 Switching Time Test Circuit unit : mm (typ) 7018A-003 6 nC --0.82 2 0.95 3 0.4 0.9 0.2 0.6 G 1 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain CPH6332 P.G 50Ω S SANYO : CPH6 ID -- VDS --3 --2 --3 --2 VGS= --1.0V --0.2 --0.4 --0.6 --0.8 Drain-to-Source Voltage, VDS -- V --1.0 IT12168 25 °C --1 --1 0 0 --4 --25° C --1.5V Ta=7 5°C --4.0V --5 Drain Current, ID -- A --4 VDS= --10V --3.0 V Drain Current, ID -- A --5 ID -- VGS --6 --2.5 V --2. 0V --1 .8V --6 0 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT12169 No. A0726-2/4 CPH6332 RDS(on) -- VGS 140 RDS(on) -- Ta 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 80 --1.5A --3.0A 60 ID= --0.6A 40 20 0 0 --2 --4 --6 --20 0 20 40 60 80 100 120 140 160 IT12171 VGS=0V 3 C 5° 3 -2 =Ta °C 75 °C 25 2 1.0 7 5 3 2 2 --1.0 7 5 5°C 25 °C --25 °C 10 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S --40 IS -- VSD --10 7 5 3 2 --0.1 7 5 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.2 5 7 --10 IT12172 Drain Current, ID -- A td (off) tf 100 7 tr 5 3 --0.7 --0.8 --0.9 --1.0 IT12173 f=1MHz 2 Ciss 1000 7 5 3 td(on) 2 --0.6 3 Ciss, Coss, Crss -- pF 2 --0.5 Ciss, Coss, Crss -- VDS 5 VDD= --10V VGS= --4V 3 --0.4 --0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 5 Switching Time, SW Time -- ns 20 Ambient Temperature, Ta -- °C VDS= --10V 2 40 IT12170 yfs -- ID 3 6A = --0. 8V, I D . 1 -= VGS --1.5A , I D= V 5 . 2 = -VGS .0A I = --3 --4.0V, D V GS= 60 0 --60 --8 Gate-to-Source Voltage, VGS -- V 80 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 120 Coss 2 Crss 100 10 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 3 2 --3.0 --2.5 --2.0 --1.5 --1.0 --10 7 5 0 1 2 3 4 5 6 7 --8 8 9 Total Gate Charge, Qg -- nC 10 11 12 IT12176 --10 --12 --14 --16 --18 --20 IT12175 ASO PW≤10µs 10 0µ 10 s ms 1m s IDP= --24A ID= --6A DC 3 2 10 0m op s era tio n( --1.0 7 5 Ta = 25 °C ) Operation in this area is limited by RDS(on). 3 2 --0.1 7 5 3 2 --0.5 0 --6 5 VDS= --10V ID= --6A --3.5 --4 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 IT12174 VGS -- Qg --4.0 --2 0 7 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT12177 Drain-to-Source Voltage, VDS -- V No. A0726-3/4 CPH6332 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 1.6 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d (9 00 0.6 m m2 ✕ 0. 0.4 8m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12178 Note on usage : Since the CPH6332 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. PS No. A0726-4/4