2SK4171 Ordering number : ENA0787 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4171 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS 60 V ±20 V ID 100 A 400 A Drain Current (Pulse) IDP Allowable Power Dissipation PD PW≤10µs, duty cycle≤1% Tc=25°C 1.75 W 75 W °C Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single pulse) *1 EAS 370 mJ Avalanche Current *2 IAV 65 A Note : *1 VDD=30V, L=100µH *2 L≤100µH, Single pulse Marking : K4171 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0507QA TI IM TC-00001044 No. A0787-1/5 2SK4171 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=50A RDS(on)1 RDS(on)2 ID=50A, VGS=10V ID=50A, VGS=4V Input Capacitance Ciss Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz Forward Transfer Admittance Static Drain-to-Source On-State Resistance Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time min ID=1mA, VGS=0V VDS=60V, VGS=0V VGS(off) ⏐yfs⏐ Cutoff Voltage Ratings Conditions typ Unit max 60 V ±10 µA µA 2.6 V 5.5 7.2 mΩ 7.5 10.5 mΩ 1 1.2 35 60 S 6900 pF 740 pF VDS=20V, f=1MHz See specified Test Circuit. 540 pF 48 ns See specified Test Circuit. 380 ns See specified Test Circuit. 500 ns See specified Test Circuit. 370 ns 135 nC 18 nC 1.0 Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=100A VDS=30V, VGS=10V, ID=100A VDS=30V, VGS=10V, ID=100A Diode Forward Voltage VSD IS=100A, VGS=0V 50 nC 1.2 V Package Dimensions unit : mm (typ) 7507-002 4.5 10.2 3.6 (5.6) 18.0 15.1 2.7 1.3 6.3 5.1 0.8 14.0 1.2 0.4 1 2 3 2.7 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=30V VIN 10V 0V L ID=50A RL=0.6Ω VIN D ≥50Ω VOUT PW=10µs D.C.≤1% 2SK4171 10V 0V G 50Ω VDD 2SK4171 P.G 50Ω S No. A0787-2/5 2SK4171 120 100 80 60 2 5° C 100 80 60 Tc =7 5° C 20 VGS=3V 0 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Drain-to-Source Voltage, VDS -- V 0 2.0 16 14 12 10 8 Tc=75°C 6 25°C --25°C 4 2 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 7 -25 =- 2 Tc Source Current, IS -- A 3 °C °C 75 10 7 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 2 IT12421 5 tf 3 2 tr 100 7 td(on) 5 4 2 0 --25 25 50 75 100 125 150 IT12420 IS -- VSD VGS=0V Single pulse 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 2.00E-01 4.00E-01 6.00E-01 8.00E-01 1.00E+00 1.20E+00 1.40E+00 IT12422 Ciss, Coss, Crss -- VDS f=1MHz 10k Ciss 7 5 3 2 Coss Crss 1k 7 5 3 2 0.1 6 2 Ciss, Coss, Crss -- pF td(off) 7 8 3 VDD=30V VGS=10V 1000 5.0 IT12418 Diode Forward Voltage, VSD -- V SW Time -- ID 2 4.5 A =50 , ID V =4 A V GS =50 , ID V 0 =1 VGS 10 0.1 7 5 3 2 0.01 0.00E+00 2 1.0 7 0.1 4.0 12 3 2 °C 25 3.5 Case Temperature, Tc -- °C VDS=10V Single pulse 5 3.0 14 IT12419 ⏐yfs⏐ -- ID 2 2.5 RDS(on) -- Tc 0 --50 0 4 2.0 Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 18 3 1.5 16 ID=50A Single pulse 2 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 20 0.5 IT12417 --25°C 0.4 °C 25°C 0.2 Tc=7 5 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 40 20 Forward Transfer Admittance, ⏐yfs⏐ -- S 140 25° --25°C C Drain Current, ID -- A V 4V 10 Drain Current, ID -- A 140 40 Switching Time, SW Time -- ns 5°C 160 160 100 VDS=10V Single pulse 180 75° C Tc=25°C Single pulse 6V 8V 180 ID -- VGS 200 Tc= --2 ID -- VDS 200 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT12423 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT12424 No. A0787-3/5 2SK4171 VGS -- Qg 10 VDS=30V ID=100A 7 6 4 3 2 1 0 0 50 100 Total Gate Charge, Qg -- nC 1.5 1.0 0.5 s s 1.0 7 5 3 2 op er at io n Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 3 2 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.75 1m C 5 7 100 IT12426 PD -- Tc 90 0 80 75 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 Ambient Temperature, Tc -- °C 160 IT12427 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12428 EAS -- Ta 120 Avalanche Energy derating factor -- % s Operation in this area is limited by RDS(on). IT12425 PD -- Ta 2.0 0m D 10 7 5 3 2 0.1 0.1 150 0µ 10 ID=100A 100 7 5 3 2 10 µs 10 s 5 PW≤10µs m Drain Current, ID -- A 8 IDP=400A 10 Gate-to-Source Voltage, VGS -- V 9 ASO 1000 7 5 3 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT12429 No. A0787-4/5 2SK4171 Note on usage : Since the 2SK4171 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2007. Specifications and information herein are subject to change without notice. PS No. A0787-5/5