2SK4198FG Ordering number : ENA1369A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198FG General-Purpose Switching Device Applications Features • • • • ON-resistance RDS(on)=1.8Ω (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions VDSS VGSS Ratings Unit 600 IDc *1 Limited only by maximum temperature Tch=150°C IDpack *2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 IDP PW≤10μs, duty cycle≤1% V ±30 V 5 A 4 A 18 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 55 mJ Avalanche Current *5 EAS IAV Avalanche Energy (Repetition) EAR Tc=25°C (SANYO’s ideal heat dissipation condition)*3 4.5 Limited only by maximum temperature Tch=150°C 3 A mJ Note : *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=5mH, IAV=4.5A *5 L≤5mH, Single pulse Marking : K4198 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network 70710 TK IM TC-00002402 / N2608QB MS IM TC-00001733 No. A1369-1/6 2SK4198FG Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance Input Capacitance Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Ratings min typ Unit max 600 V 100 μA ±100 nA VDS=10V, ID=1mA 3 5 1.2 RDS(on) VDS=10V, ID=2.5A ID=2.5A, VGS=10V Ciss VDS=30V, f=1MHz 360 pF Output Capacitance Coss VDS=30V, f=1MHz 69 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr See specified Test Circuit. 28 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 39 ns Fall Time tf See specified Test Circuit. 15 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=5A 14.3 nC Gate-to-Source Charge Qgs 3.0 nC 8.2 0.9 2.4 1.8 Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=5A VDS=200V, VGS=10V, ID=5A Diode Forward Voltage VSD IS=5A, VGS=0V V S 2.34 Ω nC 1.2 V Package Dimensions unit : mm (typ) 7529-001 4.7 10.16 3.18 A 3.23 15.8 15.87 6.68 3.3 2.54 12.98 2.76 1.47 MAX DETAIL-A 0.8 1 2 3 (0.84) 0.5 FRAME 2.54 ( 1.0) EMC 2.54 Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3SG Avalanche Resistance Test Circuit VDD=200V PW=10μs D.C.≤0.5% L ID=2.5A RL=80Ω VGS=10V ≥50Ω RG VOUT D 10V 0V G P.G RGS=50Ω S 2SK4198FG 50Ω VDD 2SK4198FG No. A1369-2/6 2SK4198FG For this package, a part of inner electrode is exposed. Please refer to the package outline for the detailedstructure. So when mounting the device, please pay enough attention to the isolation with the heatsink. According to the device mounting method, sometimes the insulation voltage may be decreased. (refer to the below insulation characteristics) Insulation / Ta=25°C / RH75% Parameter Symbol Lead & resin insulation * Ratings Conditions min typ max Unit VISO1 Metal spacer Refer to Fig.1 1600 Vrms VISO2 Washer 5.8mm Refer to Fig.2 2100 Vrms VISO3 Insulated screw, Insulated washer 3900 Vrms * : AC voltage measurement Fig.1 Fig.2 IT14077 IT14078 Insulation Measuring Diagram Insulation voltage tester AC / 1 s M3 screw Washer Metal spacer Operating pin Washer Lead Al heatsink Al heatsink IT14079 No. A1369-3/6 2SK4198FG ID -- VDS 12 12 15V 8 Drain Current, ID -- A Drain Current, ID -- A VDS=20V 10V 10 8V 6 4 2 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 25°C 8 75°C 6 4 0 0 30 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V IT13521 RDS(on) -- VGS 6 °C Tc= --25 10 2 6V VGS=5V 0 ID -- VGS 14 Tc=25°C 20 IT13522 RDS(on) -- Tc 6 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 4 3 Tc=75°C 2 25°C --25°C 1 9 10 11 12 13 14 Gate-to-Source Voltage, VGS -- V 5°C --2 Tc= °C 75 1.0 7 5 3 25 50 75 100 125 150 IT13524 IS -- VSD 3 2 2 VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 0.01 0.2 7 10 IT13525 0.6 0.8 1.0 1.2 VDD=200V VGS=10V 1.4 IT13526 Ciss, Coss, Crss -- VDS 2 3 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 5 f=1MHz 1000 7 Ciss, Coss, Crss -- pF 2 100 7 td (off) 5 3 tr 2 tf 2 3 5 7 1.0 5 Ciss 3 2 100 Coss 7 5 3 Crss 2 td(on) 10 7 0.1 0 10 7 5 °C 25 2 --25 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 0.1 0.1 Switching Time, SW Time -- ns 15 VDS=20V 5 1 IT13523 | yfs | -- ID 7 S= VG 2 --25° C 8 =2 , ID V 0 1 25°C 7 .5A 3 5°C 6 4 0 --50 0 5 5 Tc=7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=2.5A 10 7 2 Drain Current, ID -- A 3 5 7 10 IT13527 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT13528 No. A1369-4/6 2SK4198FG VGS -- Qg 10 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC 0.5 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT13531 EAS -- Ta 120 1 10 0μs 0μ 1 s 10 ms m s 1 DC 00m s op er ati on IDc=5A IDpack=4A 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 40 PW≤10μs PD -- Tc 35 1.5 20 10 7 5 3 2 0.01 0.1 16 2.0 0 IDP=18A IT13529 PD -- Ta 2.5 0 ASO 5 VDS=200V ID=5A 5 71000 IT14229 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT13532 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1369-5/6 2SK4198FG Note on usage : Since the 2SK4198FG is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1369-6/6