SANYO 2SK4198FG

2SK4198FG
Ordering number : ENA1369A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4198FG
General-Purpose Switching Device
Applications
Features
•
•
•
•
ON-resistance RDS(on)=1.8Ω (typ.)
Input capacitance Ciss=360pF (typ.)
10V drive
Repetitive avalanche guarantee
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
Conditions
VDSS
VGSS
Ratings
Unit
600
IDc *1
Limited only by maximum temperature Tch=150°C
IDpack *2
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
IDP
PW≤10μs, duty cycle≤1%
V
±30
V
5
A
4
A
18
A
2.0
W
Allowable Power Dissipation
PD
30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
55
mJ
Avalanche Current *5
EAS
IAV
Avalanche Energy (Repetition)
EAR
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
4.5
Limited only by maximum temperature Tch=150°C
3
A
mJ
Note : *1 Shows chip capability.
*2 Package limited.
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=5mH, IAV=4.5A
*5 L≤5mH, Single pulse
Marking : K4198
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
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applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
http://semicon.sanyo.com/en/network
70710 TK IM TC-00002402 / N2608QB MS IM TC-00001733 No. A1369-1/6
2SK4198FG
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±30V, VDS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
Input Capacitance
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Ratings
min
typ
Unit
max
600
V
100
μA
±100
nA
VDS=10V, ID=1mA
3
5
1.2
RDS(on)
VDS=10V, ID=2.5A
ID=2.5A, VGS=10V
Ciss
VDS=30V, f=1MHz
360
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
69
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
15
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
13
ns
Rise Time
tr
See specified Test Circuit.
28
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
39
ns
Fall Time
tf
See specified Test Circuit.
15
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=5A
14.3
nC
Gate-to-Source Charge
Qgs
3.0
nC
8.2
0.9
2.4
1.8
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=5A
VDS=200V, VGS=10V, ID=5A
Diode Forward Voltage
VSD
IS=5A, VGS=0V
V
S
2.34
Ω
nC
1.2
V
Package Dimensions
unit : mm (typ)
7529-001
4.7
10.16
3.18
A
3.23
15.8
15.87
6.68
3.3
2.54
12.98
2.76
1.47 MAX
DETAIL-A
0.8
1
2
3
(0.84)
0.5
FRAME
2.54
( 1.0)
EMC
2.54
Switching Time Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3SG
Avalanche Resistance Test Circuit
VDD=200V
PW=10μs
D.C.≤0.5%
L
ID=2.5A
RL=80Ω
VGS=10V
≥50Ω
RG
VOUT
D
10V
0V
G
P.G
RGS=50Ω
S
2SK4198FG
50Ω
VDD
2SK4198FG
No. A1369-2/6
2SK4198FG
For this package, a part of inner electrode is exposed. Please refer to the package outline for the detailedstructure.
So when mounting the device, please pay enough attention to the isolation with the heatsink.
According to the device mounting method, sometimes the insulation voltage may be decreased.
(refer to the below insulation characteristics)
Insulation / Ta=25°C / RH75%
Parameter
Symbol
Lead & resin insulation *
Ratings
Conditions
min
typ
max
Unit
VISO1
Metal spacer Refer to Fig.1
1600
Vrms
VISO2
Washer 5.8mm Refer to Fig.2
2100
Vrms
VISO3
Insulated screw, Insulated washer
3900
Vrms
* : AC voltage measurement
Fig.1
Fig.2
IT14077
IT14078
Insulation Measuring Diagram
Insulation voltage tester
AC / 1 s
M3 screw
Washer
Metal spacer
Operating pin
Washer
Lead
Al heatsink
Al heatsink
IT14079
No. A1369-3/6
2SK4198FG
ID -- VDS
12
12
15V
8
Drain Current, ID -- A
Drain Current, ID -- A
VDS=20V
10V
10
8V
6
4
2
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
25°C
8
75°C
6
4
0
0
30
2
4
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS -- V
IT13521
RDS(on) -- VGS
6
°C
Tc= --25
10
2
6V
VGS=5V
0
ID -- VGS
14
Tc=25°C
20
IT13522
RDS(on) -- Tc
6
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
5
4
3
Tc=75°C
2
25°C
--25°C
1
9
10
11
12
13
14
Gate-to-Source Voltage, VGS -- V
5°C
--2
Tc=
°C
75
1.0
7
5
3
25
50
75
100
125
150
IT13524
IS -- VSD
3
2
2
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
0.01
0.2
7
10
IT13525
0.6
0.8
1.0
1.2
VDD=200V
VGS=10V
1.4
IT13526
Ciss, Coss, Crss -- VDS
2
3
0.4
Diode Forward Voltage, VSD -- V
SW Time -- ID
5
f=1MHz
1000
7
Ciss, Coss, Crss -- pF
2
100
7
td (off)
5
3
tr
2
tf
2
3
5
7
1.0
5
Ciss
3
2
100
Coss
7
5
3
Crss
2
td(on)
10
7
0.1
0
10
7
5
°C
25
2
--25
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
0.1
0.1
Switching Time, SW Time -- ns
15
VDS=20V
5
1
IT13523
| yfs | -- ID
7
S=
VG
2
--25°
C
8
=2
, ID
V
0
1
25°C
7
.5A
3
5°C
6
4
0
--50
0
5
5
Tc=7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
ID=2.5A
10
7
2
Drain Current, ID -- A
3
5
7
10
IT13527
0
10
20
30
40
Drain-to-Source Voltage, VDS -- V
50
IT13528
No. A1369-4/6
2SK4198FG
VGS -- Qg
10
3
2
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
Total Gate Charge, Qg -- nC
0.5
60
80
100
120
140
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
160
IT13531
EAS -- Ta
120
1
10 0μs
0μ
1
s
10 ms
m
s
1
DC 00m
s
op
er
ati
on
IDc=5A
IDpack=4A
1.0
7
5
3
2
Operation in
this area is
limited by RDS(on).
0.1
7
5
3
2
Tc=25°C
Single pulse
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.0
40
PW≤10μs
PD -- Tc
35
1.5
20
10
7
5
3
2
0.01
0.1
16
2.0
0
IDP=18A
IT13529
PD -- Ta
2.5
0
ASO
5
VDS=200V
ID=5A
5 71000
IT14229
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT13532
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1369-5/6
2SK4198FG
Note on usage : Since the 2SK4198FG is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of July, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1369-6/6