BFL4001 Ordering number : ENA1638A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4001 General-Purpose Switching Device Applications Features • • Low ON-resistance Avalanche resistance guarantee • • High-speed switching 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Unit 900 V ±30 V A IDc*1 Limited only by maximum temperature Tch=150°C 6.5 IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 4.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation PD 2.0 W Channel Temperature Drain Current (DC) 37 W Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 223 mJ 6.5 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6.5A *5 L≤10mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 2.54 Electrical Connection 6.68 3.3 Marking 3.23 FL4001 LOT No. 2.76 1 12.98 15.8 15.87 2 1.47 MAX 0.8 3 1 2.54 2 3 0.5 2.54 1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS http://semicon.sanyo.com/en/network 22912 TKIM TC-00002729/31010QB TK IM TC-00002256 No.A1638-1/5 BFL4001 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=720V, VGS=0V min typ Unit max 900 V 1.0 mA ±100 nA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=3.25A Static Drain-to-Source On-State Resistance RDS(on) ID=3.25A, VGS=10V Input Capacitance Ciss VDS=30V, f=1MHz 850 pF Output Capacitance Coss VDS=30V, f=1MHz 130 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 43 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr See specified Test Circuit. 49 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 156 ns Fall Time tf See specified Test Circuit. 52 ns VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A 44 nC 7.0 nC 22 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 2.0 4.0 1.8 S 2.1 VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V Switching Time Test Circuit V 3.6 2.7 0.85 Ω 1.2 V Avalanche Resistance Test Circuit VDD=200V PW=10μs D.C.≤0.5% L ID=3.25A RL=61.5Ω VGS=10V D ≥50Ω RG VOUT BFL4001 10V 0V G VDD 50Ω BFL4001 P.G S RGS=50Ω ID -- VDS 14 ID -- VGS 14 Tc=25°C 12 VDS=20V 12 10 20V Drain Current, ID -- A Drain Current, ID -- A 10V 7V 8 6 6V 4 5V 2 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 8 25°C 6 75°C 4 2 VGS=4V 0 Tc= --25°C 10 40 IT15294 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT15295 No.A1638-2/5 BFL4001 RDS(on) -- VGS 6 RDS(on) -- Tc 7 Tc=75°C 3 25°C 2 --25°C 1 5 6 7 8 9 10 11 12 13 Gate-to-Source Voltage, VGS -- V °C -25 = 1.0 Tc 7 °C 75 5 3 2 0.1 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 50 75 100 125 150 IT15297 VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 IT15299 Ciss, Coss, Crss -- VDS 5 f=1MHz 3 2 3 td (off) 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 25 Diode Forward Voltage, VSD -- V 100 7 5 tf 3 tr td(on) 2 Ciss 1000 7 5 3 2 Coss 100 7 5 Crs s 3 2 10 7 0.1 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 10 3 100 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 40 45 50 IT15302 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V VDS=200V ID=6.5A 9 5 0 IT15300 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 0 IS -- VSD 0.01 0.2 5 7 10 IT15298 VDD=200V VGS=10V 5 --25 3 2 Drain Current, ID -- A 7 1 3 2 °C 25 2 2 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 =3 I V, D 0 =1 V GS 0 --50 15 VDS=20V 5 3 IT15296 | yfs | -- ID 7 14 A .25 5°C 4 4 Tc= 7 0 5 --25° C 4 6 25°C 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=3.25A 10 7 5 3 2 ASO IDP=13A (PW≤10μs) 1.0 7 5 3 2 0.1 7 5 3 2 10 IDc(*1)=6.5A 10 IDpack(*2)=4.1A Operation in this area is limited by RDS(on). Tc=25°C Single pulse 0.01 0.1 2 3 5 7 1.0 50 IT15301 1m 10 s m DC 100 s ms op er ati on μs 0μ s *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V 5 71000 IT16791 No.A1638-3/5 BFL4001 PD -- Ta 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT15304 EAS -- Ta 120 PD -- Tc 40 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 37 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15305 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No.A1638-4/5 BFL4001 Note on usage : Since the BFL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2012. Specifications and information herein are subject to change without notice. PS No.A1638-5/5