SFT1341 Ordering number : ENA1444 SANYO Semiconductors DATA SHEET SFT1341 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Symbol Conditions Ratings VDSS VGSS ID IDP PW≤10μs, duty cycle≤1% Unit --40 V ±10 V --10 A --40 A 1.0 W Allowable Power Dissipation PD 15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V Forward Transfer Admittance VGS(off) | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--5A, VGS=--4.5V ID=--5A, VGS=--2.5V ID=--2.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Ratings min typ max --40 V VDS=--40V, VGS=0V VGS=±8V, VDS=0V Marking : T1341 --0.4 4.6 Unit --1 μA ±10 μA --1.4 7.7 V S 86 112 mΩ 110 154 mΩ 140 210 mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 40809PA MS IM TC-00001932 No. A1444-1/4 SFT1341 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings Conditions min typ Unit max 650 pF 65 pF Crss VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz 50 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9.0 ns Rise Time tr td(off) See specified Test Circuit. 50 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge See specified Test Circuit. 81 tf Qg See specified Test Circuit. 80 ns VDS=--20V, VGS=--4.5V, ID=--10A 8.0 nC 1.4 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--20V, VGS=--4.5V, ID=--10A VDS=--20V, VGS=--4.5V, ID=--10A Diode Forward Voltage VSD IS=--10A, VGS=0V 2.5 --1.0 Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 V 2.3 2.3 5.5 0.5 0.6 2 3 2.3 2.3 7.5 2.5 0.8 0.8 1.6 0.85 1.2 1 0.5 2 3 0 t o 0.2 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 1.2 1.5 7.0 5.5 4 0.85 0.7 0.5 1.5 6.5 5.0 0.5 4 7.0 6.5 5.0 1 nC --1.5 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Switching Time Test Circuit 0V --4.5V VDD= --20V VIN ID= --5A RL=4Ω VIN D PW=10μs D.C.≤1% VOUT G P.G SFT1341 50Ω S No. A1444-2/4 SFT1341 --1.5V --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 220 200 --5A 180 160 140 120 100 80 60 40 --1 --2 --3 --4 --6 --5 --7 --8 Gate-to-Source Voltage, VGS -- V --9 C 75° --2.5 --3.0 IT14523 260 220 200 .5A = --2 I D , A .8V --5.0 = --1 I D= , VGS V .5 .0A = --5 = --2 VGS -4.5V, I D =VGS 180 160 140 120 100 80 60 40 --10 --40 --20 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 160 IT14525 IS -- VSD 3 2 140 VGS=0V = Ta 1.0 7 5 5°C --2 °C 75 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A SW Time -- ID 5 --0.01 5 7 --10 IT14526 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 3 VDD= --20V VGS= --4.5V 3 0 --25°C 2 3 2 25° C °C 25 3 5°C Source Current, IS -- A --10 7 5 10 7 5 0.1 7 --0.01 --2.0 240 20 0 --60 VDS= --10V 2 --1.5 RDS(on) -- Tc IT14524 | yfs | -- ID 3 --1.0 280 ID= --2.5A 240 --0.5 300 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 260 0 Gate-to-Source Voltage, VGS -- V Ta=25°C 280 20 0 0 0 --1.0 IT14522 RDS(on) -- VGS 300 --0.9 --1 Ta= 7 0 Ta = VGS= --1.2V --1 Forward Transfer Admittance, | yfs | -- S --3 --2 --2 --1.4 IT14527 f=1MHz 2 2 1000 td (off) 100 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --4 C --3 --5 25° --4 --6 °C --5 --7 75 °C Drain Current, ID -- A 8V . --1 --6 0 Ta= --25° C --8 --2 5 .5 V --7 --2 VDS= --10V --9 .5V --8 V --8 Drain Current, ID -- A V .5 --3 --4 --9 ID -- VGS --10 25° C ID -- VDS --10 tf 7 5 3 tr 2 td(on) 10 5 3 2 7 5 5 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 --10 2 3 IT14528 Coss 100 7 3 --0.1 Ciss 7 3 Crss 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14529 No. A1444-3/4 SFT1341 --4.0 VGS -- Qg 7 5 VDS= --20V ID= --10A PW≤10μs 10 2 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --10 7 5 ID= --10A DC 3 op Operation in this area is limited by RDS(on). 0μ s 1m 10 s ms er 2 --1.0 7 5 μs 10 ati on 10 0m s 3 --0.5 0 2 0 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC PD -- Ta 1.2 Allowable Power Dissipation, PD -- W ASO IDP= --40A 3 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 8 9 IT14530 Tc=25°C Single pulse --0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT14531 1.0 0.8 No he at 0.6 sin k 0.4 0.2 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14532 Note on usage : Since the SFT1341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2009. Specifications and information herein are subject to change without notice. PS No. A1444-4/4