FAIRCHILD MMBT3906SL_12

MMBT3906SL
PNP Epitaxial Silicon Transistor
Features
•
•
•
•
•
•
General purpose amplifier transistor
Ultra small surface mount package for all types (max 0.43mm tall)
Suitable for general switching & amplification
Well suited for portable application
As complementary type, NPN MMBT3904SL is recommended.
Pb free
COLLECTOR
3
C
1
BASE
E
B
SOT-923F
Absolute Maximum Ratings
Symbol
VCBO
VCEO
VEBO
IC
TJ
TSTG
2
EMITTER
Marking : AB
Ta = 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature Range
Value
Unit
-40
-40
-5
200
150
-55 ~ 150
V
V
V
mA
C
C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics* Ta = 25C unless otherwise noted
Symbol
Parameter
Max
Unit
PC
RJA
Collector Power Dissipation, by RJA
Thermal Resistance, Junction to Ambient
227
550
mW
C/W
* Minimum land pad.
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
www.fairchildsemi.com
1
MMBT3906SL — PNP Epitaxial Silicon Transistor
August 2012
Symbol
Parameter
BVCBO
BVCEO
BVEBO
ICEX
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
VCE (sat)
VBE (sat)
fT
Cob
Cib
td
tr
ts
tf
Test Condition
IC = -10A, IE = 0
IC = -1mA, IB = 0
IE = -10A, IC = 0
VCE = -30V, VEB(OFF) = -0.3V
VCE = 1V, IC = -0.1mA
VCE = 1V, IC = -1mA
VCE = 1V, IC = -10mA
VCE = 1V, IC = -50mA
VCE = 1V, IC = -100mA
Collector-Emitter Saturation Voltage IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
Base-Emitter Saturation Voltage
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
Current Gain Bandwidth Product
VCE = -20V, IC = -10mA,
f = 100MHz
Output Capacitance
VCB = -5V, IE = 0, f = 1MHz
Input Capacitance
VEB = -0.5V, IC = 0, f = 1MHz
Delay Time
VCC = -3V, IC = -10mA
IB1 = - IB2 = -1mA
Rise Time
Storage Time
Fall Time
Min.
Max.
Unit
-50
V
V
V
nA
-40
40
-5
60
80
100
60
30
-0.65
300
-0.25
-0.4
-0.85
-0.95
V
V
V
V
MHz
7.0
15
35
35
225
75
pF
pF
ns
ns
ns
ns
250
* DC Item are tested by Pulse Test: Pulse Width300us, Duty Cycle2%
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
www.fairchildsemi.com
2
MMBT3906SL — PNP Epitaxial Silicon Transistor
Electrical Characteristics* Ta = 25C unless otherwise noted
MMBT3906SL — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
1000
o
T J=125 C
o
T J=75 C
Ic=10*Ib
Collector-Emitter Voltage,[mV]
Vce=1V
o
T J=25 C
Current Gain
o
T J=-25 C
100
o
T J=125 C
o
T J=75 C
o
T J=25 C
100
o
T J=-25 C
10
1
10
100
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Figure 4. Collector- Base Leakage Current
100
Base-Collector Leakage Current,[nA]
Ic=10*Ib
o
Base- Emitter Voltage,[mV]
o
T J=25 C
T J=-25 C
1000
o
T J=75 C
o
T J=125 C
100
10
o
T J=125 C
10
o
T J=75 C
o
T J=25 C
o
T J=-25 C
1
10
100
Figure 5. Collector- Base Capacitance
30
40
Figure 6. Power Derating
12
300
f=1mhz
250
11
Power Dissipation, [mW]
Base- Collector Juntion Capacitance, Cob[pF]
20
Base-Collector Revere Voltage, [V]
Collector Current, [mA]
9
8
6
200
150
100
50
0
0
5
0
10
50
75
100
125
150
o
Ambient Temperature, Ta[ C]
Base- Collector Reverse Voltage, V cb[V]
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
25
www.fairchildsemi.com
3
MMBT3906SL — PNP Epitaxial Silicon Transistor
Package Dimensions
SOT-923F
•
Case: SOT-923F
•
Case Material (Molded Plastic): KTMC1060SC
•
UL Flammability classification rating: “V0”
•
Moisture Sensitivity level per JESD22-A1113B: MSL 1
• Lead terminals solderable per MIL-STD7502026 /JESD22A121
• Lead Free Plating: Pure Tin (Matte)
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Dimensions in Millimeters
© 2012 Fairchild Semiconductor Corporation
MMBT3906SL Rev. 1.1.0
www.fairchildsemi.com
4
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I61
© Fairchild Semiconductor Corporation
www.fairchildsemi.com