SFT1431 Ordering number : ENA1624 SANYO Semiconductors DATA SHEET SFT1431 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Motor drive application. Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 11 A Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% V 44 A 1.0 W Allowable Power Dissipation PD 15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max 35 V Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VDS=35V, VGS=0V VGS=±16V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=5.5A 5 RDS(on)1 ID=5.5A, VGS=10V 19 25 mΩ RDS(on)2 ID=3A, VGS=4.5V 28 39.5 mΩ RDS(on)3 ID=3A, VGS=4V 35 49 mΩ Static Drain-to-Source On-State Resistance Marking : T1431 1.2 1 μA ±10 μA 2.6 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network D0209PA TK IM TC-00002143 No. A1624-1/4 SFT1431 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time tr td(off) See specified Test Circuit. 40 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge pF 130 pF 84 pF See specified Test Circuit. 60 tf Qg See specified Test Circuit. 36 ns VDS=20V, VGS=10V, ID=11A 17.3 nC 3.2 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=20V, VGS=10V, ID=11A VDS=20V, VGS=10V, ID=11A Diode Forward Voltage VSD IS=11A, VGS=0V 3.6 0.88 Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 nC 1.2 V 2.3 2.3 5.5 0.5 0.6 2 3 2.3 2.3 7.5 2.5 0.8 0.8 1.6 0.85 1.2 1 0.5 2 3 0 t o 0.2 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 1.2 1.5 7.0 5.5 4 0.85 0.7 0.5 1.5 6.5 5.0 0.5 4 7.0 6.5 5.0 1 960 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Switching Time Test Circuit 10V 0V VDD=15V VIN ID=5.5A RL=2.7Ω VIN D PW=10μs D.C.≤1% VOUT G P.G SFT1431 50Ω S No. A1624-2/4 SFT1431 ID -- VDS V 18 16 5 VGS=3.0V 4 3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RDS(on) -- VGS 75 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 ID=5.5A 65 0.9 50 45 40 35 30 25 20 15 2 3 4 5 6 7 8 9 Tc= 2 C 75° 1.0 5 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 Ciss, Coss, Crss -- pF td(off) 5 tf 2 td(on) tr 10 10 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 0 2 25 50 75 100 125 3 IT15245 150 IT15242 IS -- VSD 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT15244 Ciss, Coss, Crss -- VDS f=1MHz Ciss 1000 7 5 3 2 Coss 100 5 5 --25 VGS=0V Single pulse 10 7 5 3 2 5 3 --2 5 15 7 2 °C 20 7 3 0.1 25 25 2 100 3 30 Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 7 35 3 2 4.0 IT15240 A =3.0 4.0, I D = VGS 3.0A , I D= 4.5V = VGS 5.5A , I D= 10.0V = VGS 40 IT15243 SW Time -- ID 3 3.5 45 0.01 7 5 3 2 0.001 7 3 0.1 3.0 Case Temperature, Tc -- °C Source Current, IS -- A 3 °C --25 2.5 Single pulse 3 2 25°C 2.0 50 IT15241 10 5 1.5 RDS(on) -- Tc 0 --50 VDS=10V 7 1.0 Gate-to-Source Voltage, VGS -- V 10 11 12 13 14 15 16 | yfs | -- ID 2 0.5 55 55 1 0 IT15239 3A 60 0 1.0 Tc=25°C Single pulse Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 6 Tc= 75°C 25° C --25° C 0.1 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 8 2 Tc=25°C Single pulse 1 10 10 4 2 0 12 5°C 6 14 °C 16.0 V 7 VDS=10V Single pulse Tc= 7 8 V Drain Current, ID -- A 9 ID -- VGS 20 3.5 4.0 10.0 V 8 .0 V 10 Drain Current, ID -- A 6.0V 4.5V 11 3 Crss 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 IT15246 No. A1624-3/4 SFT1431 VGS -- Qg 9 PW≤10μs 10 0μ s Drain Current, ID -- A 4 3 2 DC 100m op s era tio n s 5 ID=11A 3 2 Operation in this area is limited by RDS(on). 1.0 7 5 3 2 0 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC PD -- Ta 18 0.6 0.4 0.2 40 60 80 100 3 5 7 1.0 120 Ambient Temperature, Ta -- °C 140 160 IT15249 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 IT15248 PD -- Tc 20 0.8 20 2 IT15247 1.0 0 Tc=25°C Single pulse 0.1 0.1 Allowable Power Dissipation, PD -- W 1.2 16 s 1m 6 10 7 5 m 7 1 Allowable Power Dissipation, PD -- W IDP=44A 3 2 8 0 ASO 100 7 5 VDS=20V ID=11A 10 Gate-to-Source Voltage, VGS -- V 10 15 10 5 0 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT15250 Note on usage : Since the SFT1431 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2009. Specifications and information herein are subject to change without notice. PS No. A1624-4/4