SFT1446 Ordering number : ENA1742 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SFT1446 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)1=39mΩ(typ) 4V drive • • Input Capacitance Ciss=750pF(typ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 20 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% V 80 A 1 W Allowable Power Dissipation PD 23 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm (typ) 7003-004 0.5 1.5 5.5 0.5 1 2 2.3 0.8 1.2 7.5 0.8 1.6 0.6 1 2.3 2 3 0 t o 0.2 0.6 0.5 3 2.5 0.85 0.85 0.7 1 : Gate 2 : Drain 3 : Source 4 : Drain 1.2 1.5 4 7.0 5.5 4 2.3 6.5 5.0 0.5 7.0 2.3 6.5 5.0 1.2 2.3 2.3 SANYO : TP-FA SANYO : TP Product & Package Information Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT553 • Minimum Packing Quantity : 500 pcs./bag • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT428 • Minimum Packing Quantity : 700 pcs./reel Marking(TP, TP-FA) T1446 1 : Gate 2 : Drain 3 : Source 4 : Drain Taping Type(TP-FA) : TL LOT No. TL http://semicon.sanyo.com/en/network 60210PA TK IM TC-00002331 No. A1742-1/4 SFT1446 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Ratings Conditions min typ Unit max 60 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V 7.0 RDS(on)1 VDS=10V, ID=10A ID=10A, VGS=10V 39 51 mΩ RDS(on)2 ID=5A, VGS=4.5V 54 76 mΩ RDS(on)3 ID=5A, VGS=4V 62 87 mΩ Input Capacitance Ciss VDS=20V, f=1MHz 750 pF Output Capacitance Coss VDS=20V, f=1MHz 59 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 47 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8.5 ns Rise Time tr See specified Test Circuit. 31 ns Turn-OFF Delay Time td(off) tf See specified Test Circuit. 60 ns See specified Test Circuit. 48 ns 16 nC Static Drain-to-Source On-State Resistance Fall Time S Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=14A VDS=30V, VGS=10V, ID=14A 3.3 nC Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=14A 3.6 nC Diode Forward Voltage VSD IS=20A, VGS=0V 1.01 1.2 V Switching Time Test Circuit 10V 0V VDD=30V VIN ID=10A RL=3Ω VIN D PW=10μs D.C.≤1% VOUT G SFT1446 50Ω Drain Current, ID -- A 16. 12 10 3.5V 8 6 3.0V 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V 1.8 5 2.0 IT15539 °C 10 VGS=2.5V 0 25 Tc= 15 25 4 20 0 0 0.5 1.0 1.5 2.0 2.5 Tc= 75° --2 C 5°C V 6.0 25 4.0V 0V 14 --2 5°C VDS=10V Single pulse 4.5 10 .0V 16 ID -- VGS 30 V V 18 8.0 Tc=25°C Single pulse 75 °C ID -- VDS 20 Drain Current, ID -- A S °C P.G 3.0 3.5 4.0 4.5 5.0 Gate-to-Source Voltage, VGS -- V 5.5 6.0 IT15540 No. A1742-2/4 SFT1446 RDS(on) -- VGS 110 100 ID=5A 90 10A 80 70 60 50 40 30 20 1 2 3 4 5 6 7 8 9 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 25° 5 3 Tc= °C --25 2 C 75° 1.0 5 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns tr 7 2 3 5 7 10 Drain Current, ID -- A 2 3 10 7 5 3 2 2 1.0 7 5 1 3 2 3 8 10 0.8 12 Total Gate Charge, Qg -- nC 14 16 1.0 1.2 18 IT15547 1.4 IT15544 f=1MHz Ciss Coss Crss 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A 4 160 30 IT15546 ASO IDP=80A (PW≤10μs) 10 10 ID=20A μs 0μ s DC 10 op era tio n Operation in this area is limited by RDS(on). s 1m 5 140 IT15542 Ciss, Coss, Crss -- VDS 2 6 6 0.6 7 7 4 0.4 100 3 2 2 120 2 8 0 100 3 100 7 5 0 0.2 IT15545 VDS=30V ID=20A 9 80 5 2 5 VGS -- Qg 10 0 7 3 7 1.0 60 IS -- VSD 0.1 7 5 3 2 3 5 40 1.0 7 5 3 2 5 3 20 VGS=0V Single pulse 10 7 5 3 2 5 2 0 1000 2 td(on) --20 2 tf 10 --40 3 5 3 20 Diode Forward Voltage, VSD -- V td(off) 7 2 0.1 Gate-to-Source Voltage, VGS -- V 3 VDD=30V VGS=10V 100 40 IT15543 SW Time -- ID 2 =5A V, I D 5 . 4 = A =10 VGS V, I D 0 . 0 =1 VGS 60 0.01 7 5 3 2 0.001 7 3 0.1 =4.0 VGS 5 3 2 10 7 =5A , ID 80 Case Temperature, Tc -- °C VDS=10V Single pulse 2 100 IT15541 | yfs | -- ID 3 120 0 --60 10 11 12 13 14 15 16 Gate-to-Source Voltage, VGS -- V Single pulse Tc= 75°C 25° C --25° C 120 RDS(on) -- Tc 140 Tc=25°C Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 130 ms 10 0m s Tc=25°C 0.1 Single pulse 2 3 5 7 1.0 0.1 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT15548 No. A1742-3/4 SFT1446 PD -- Ta 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 100 PD -- Tc 30 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 120 Ambient Temperature, Ta -- °C 140 160 IT15549 25 23 20 15 10 5 0 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT15550 Note on usage : Since the SFT1446 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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