2SK3815 Ordering number : EN8053A SANYO Semiconductors DATA SHEET 2SK3815 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings Unit VDSS VGSS 60 V ±20 V ID 23 A IDP PW≤10µs, duty cycle≤1% 92 A 1.65 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 19.8 mJ Avalanche Current *2 IAV 23 Tc=25°C A Note : *1 VDD=20V, L=50µH, IAV=23A *2 L≤50µH, single pulse Marking : K3815 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2807 TI IM TC-00001041 / 93004QA TS IM TB-00000601 No.8053-1/5 2SK3815 Electrical Characteristics at Ta=25°C Symbol IDSS IGSS Gate-to-Source Leakage Current ID=1mA, VGS=0V VDS=60V, VGS=0V RDS(on)1 RDS(on)2 ID=12A, VGS=10V ID=12A, VGS=4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Turn-ON Delay Time td(on) tr td(off) tf Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD ±10 1.2 pF See specified Test Circuit. 11 ns See specified Test Circuit. 85 ns See specified Test Circuit. 72 ns See specified Test Circuit. 78 ns VDS=30V, VGS=10V, ID=23A VDS=30V, VGS=10V, ID=23A 19 nC 2.5 nC VDS=30V, VGS=10V, ID=23A IS=23A, VGS=0V 4.1 0.2 0.2 1.5MAX 8.8 9.9 1.3 3.0 1 2 3 0 to 0.3 1.2 2.55 2.7 1 : Gate 2 : Drain 3 : Source 2.7 0.4 2.55 3 2.55 2.55 V 0.8 0.4 11.0 1.5 4.5 1.6 11.5 nC 1.04 10.2 1.3 20.9 mΩ mΩ pF 1.2 (9.4) 55 85 105 4.5 2.55 42 60 pF unit : mm (typ) 7001-003 2 V S 125 unit : mm (typ) 7513-002 1 15 µA µA 775 Package Dimensions 0.8 2.6 9 Package Dimensions 10.2 V 1 VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=12A Forward Transfer Admittance Unit max 60 VGS(off) ⏐yfs⏐ Cutoff Voltage typ 1.4 V(BR)DSS Zero-Gate Voltage Drain Current min 1.35 Drain-to-Source Breakdown Voltage Ratings Conditions 8.8 Parameter 2.55 SANYO : SMP-FD SANYO : SMP Switching Time Test Circuit 1 : Gate 2 : Drain 3 : Source Unclamped Inductive Test Circuit VDD=30V VIN 10V 0V ≥50Ω RG ID=12A RL=2.5Ω VIN D L DUT VOUT PW=10µs D.C.≤1% 15V 0V G 50Ω VDD 2SK3815 P.G 50Ω S No.8053-2/5 2SK3815 4V 20 15 10 VGS=3V 15 10 5 25 5 20 °C Tc= 75 ° --25 C °C Drain Current, ID -- A 8V 6V 25 75° C Tc= --25 °C 10V VDS=10V 25 Drain Current, ID -- A ID -- VGS 30 Tc=25°C 25° C ID -- VDS 30 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 100 80 Tc=75°C 40 25°C --25°C 20 0 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 7 5 = Tc 3 5 --2 °C °C 75 2 1.0 7 5 3 0.1 3 5 2 7 1.0 3 5 7 2 10 20 --25 0 25 50 75 100 125 150 IT07803 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.3 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD -- V IT07804 IT07805 Ciss, Coss, Crss -- VDS 3 f=1MHz VDD=30V VGS=10V 2 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 40 3 SW Time -- ID 1000 2 td(off) 100 7 5 tf 3 tr 2 td(on) 10 1000 Ciss 7 5 3 2 Coss Crss 100 7 7 5 3 0.1 60 0.01 2 Drain Current, ID -- A 7 5 A =12 , ID V 4 = A V GS =12 , ID V 0 =1 VGS 80 100 7 5 3 2 °C 25 6 IT07801 Case Temperature, Tc -- °C 2 10 5 100 IT07802 VDS=10V 3 4 120 0 --50 10 ⏐yfs⏐ -- ID 5 3 RDS(on) -- Tc 140 120 60 2 Gate-to-Source Voltage, VGS -- V ID=12A 2 1 IT07800 RDS(on) -- VGS 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4.0 Tc=75 °C 25°C --25°C 0 5 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT07806 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT07807 No.8053-3/5 2SK3815 VGS -- Qg 10 8 100 7 5 7 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 6 5 4 1 3 2 10 15 20 Total Gate Charge, Qg -- nC 1.0 0.5 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT07809 PD -- Tc 40 35 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 140 Amibient Tamperature, Ta -- °C 160 IT07811 0 20 40 60 80 100 120 Case Tamperature, Tc -- °C 140 160 IT07810 EAS -- Ta 120 Avalanche Energy derating factor -- % n Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.5 tio Operation in this area is limited by RDS(on). 45 1.65 op era IT07808 PD -- Ta 2.0 DC 0.1 0.1 0 PW≤10µs 10 µs 10 0µ s 1m s 10 10 ms 0m s ID=23A 3 2 2 5 IDP=92A 10 7 5 1.0 7 5 3 0 ASO 2 VDS=30V ID=23A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No.8053-4/5 2SK3815 Note on usage : Since the 2SK3815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2007. Specifications and information herein are subject to change without notice. PS No.8053-5/5