SAVANTIC D44H10

SavantIC Semiconductor
Product Specification
D44H10
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Fast switching speeds
·Low collector saturation voltage
APPLICATIONS
·For general purpose power amplification
and switching regulators,converters and
power amplifiers applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
80
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
10
A
ICM
Collector current-Peak
20
A
PD
Total power dissipation
TC=25
50
Ta=25
1.67
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
D44H10
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA IB=0,
VCEsat
Collector-emitter saturation voltage
IC=8A ;IB=0.8A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=0.8A
1.5
V
ICES
Collector cut-off current
VCE=80V; VBE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=2A ; VCE=1V
35
hFE-2
DC current gain
IC=4A ; VCE=1V
20
fT
Transition frequency
IC=0.5A ; VCE=10V
50
MHz
Ccb
Collector capacitance
f=1MHz ; VCB=10V
130
pF
0.3
µs
0.5
µs
0.14
µs
80
UNIT
V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A IB1=- IB2=0.5A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
D44H10