SavantIC Semiconductor Product Specification D44H10 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·For general purpose power amplification and switching regulators,converters and power amplifiers applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 10 A ICM Collector current-Peak 20 A PD Total power dissipation TC=25 50 Ta=25 1.67 Tj Junction temperature 150 Tstg Storage temperature -55~150 W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification D44H10 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=10mA IB=0, VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=0.8A 1.5 V ICES Collector cut-off current VCE=80V; VBE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=2A ; VCE=1V 35 hFE-2 DC current gain IC=4A ; VCE=1V 20 fT Transition frequency IC=0.5A ; VCE=10V 50 MHz Ccb Collector capacitance f=1MHz ; VCB=10V 130 pF 0.3 µs 0.5 µs 0.14 µs 80 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=5A IB1=- IB2=0.5A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 D44H10