Inchange Semiconductor Product Specification D45H10 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Fast switching speeds ・Low collector saturation voltage APPLICATIONS ・For general purpose power amplifications and switching regulators,converters and power amplifiers applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 体 导 半 Absolute maximum ratings (Tc=25℃) 固电 SYMBOL VCBO PARAMETER EM S E G N A H D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter -80 V Collector-emitter voltage Open base -80 V Emitter-base voltage Open collector -5 V Collector current (DC) -10 A ICM Collector current-Peak -20 A PD Total power dissipation VCEO VEBO IC INC TC=25℃ 50 Ta=25℃ 1.67 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 2.5 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification D45H10 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA IB=0, VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -1.0 V VBEsat Base-emitter saturation voltage IC=-8A ;IB=-0.8A -1.5 V ICES Collector cut-off current VCE=-80V; VBE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-2A ; VCE=-1V 35 hFE-2 DC current gain IC=-4A ; VCE=-1V 20 fT Transition frequency IC=-0.5A ; VCE=-10V Ccb Collector capacitance f=1MHz ; VCB=-10V Switching times ton ts tf 固电 体 导 半 EM S E NG Turn-on time A H C IN Storage time Fall time CONDITIONS TYP. MAX -80 UNIT V 40 R O T UC D N O IC IC=-5A IB1=- IB2=-0.5A 2 MIN MHz 230 pF 135 ns 0.5 μs 0.1 μs Inchange Semiconductor Product Specification D45H10 Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3