SavantIC Semiconductor Product Specification BUX80 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·Motor control ·High frequency and efficiency converters PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 5 A PT Total power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.1 UNIT /W SavantIC Semiconductor Product Specification BUX80 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=1 A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=2.5 A 3.0 V VBEsat-1 Base-emitter saturation voltage IC=5 A;IB=1 A 1.4 V VBEsat-2 Base-emitter saturation voltage IC=8 A;IB=2.5 A 1.8 V ICES Collector cut-off current VCE=800V;VBE=0 TC=125 1.0 3.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 10 mA hFE DC current gain IC=1.2A ; VCE=5V 0.5 µs 3.5 µs 0.5 µs 400 UNIT V 30 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A ;IB1=1A; IB2=-2A VCC=-250V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX80