SavantIC Semiconductor Product Specification D45H8 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·For general purpose power amplifications and switching regulators,converters and power amplifiers applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -10 A ICM Collector current-Peak -20 A PD Total power dissipation TC=25 50 Ta=25 1.67 Tj Junction temperature 150 Tstg Storage temperature -55~150 W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification D45H8 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA IB=0, VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.4A -1.0 V VBEsat Base-emitter saturation voltage IC=-8A ;IB=-0.8A -1.5 V ICES Collector cut-off current VCE=-80V; VBE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE-1 DC current gain IC=-2A ; VCE=-1V 60 hFE-2 DC current gain IC=-4A ; VCE=-1V 40 fT Transition frequency IC=-0.5A ; VCE=-10V 40 MHz Ccb Collector capacitance f=1MHz ; VCB=-10V 230 pF 135 ns 0.5 µs 0.10 µs -60 UNIT V Switching times ton Turn-on time ts Storage time tf Fall time IC=-5A IB1=- IB2=-0.5A 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 D45H8