SuperFET® II FCU900N60Z 600V N-Channel MOSFET Features • 675V @TJ = 150oC Description • Max. RDS(on) = 900mΩ SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Ultra Low Gate Charge (Typ. Qg = 13nC) • Low Effective Output Capacitance (Typ. Coss.eff = 49pF) • 100% Avalanche Tested This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • ESD Improved Capacity D G I-PAK S MOSFET Maximum Ratings TC = Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage 25oC unless otherwise noted* Parameter Rating 600 -DC ±20 -AC (f>1Hz) -Continuous (TC = 25oC) ±30 4.5 Units V V ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 1 A EAR Repetitive Avalanche Energy (Note 1) 0.52 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt -Continuous (TC = 100oC) - Pulsed MOSFET dv/dt (TC = 25oC) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC A (Note 1) 13.5 A (Note 2) 47.5 mJ 20 100 PD TL 2.8 V/ns 52 W 0.42 W/oC -55 to +150 oC 300 oC Rating Units Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 2.4 RθJA Thermal Resistance, Junction to Ambient 100 ©2012 Fairchild Semiconductor Corporation FCU900N60Z Rev. C0 1 oC/W www.fairchildsemi.com FCU900N60Z 600V N-Channel MOSFET August 2012 Device Marking FCU900N60Z Device FCU900N60Z Package I-PAK Reel Size - Tape Width - Quantity 75 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 1mA, VGS = 0V, TJ = 25oC 625 - - V ID = 1mA, VGS = 0V, TJ = 150oC 675 - - V - 0.72 - V/oC - 700 - V μA Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature ID = 1mA, Referenced to 25oC Coefficient Drain to Source Avalanche Breakdown VGS = 0V, ID = 4.5A Voltage VDS = 600V, VGS = 0V Zero Gate Voltage Drain Current VDS = 600V, TC = 125oC IDSS Gate to Body Leakage Current IGSS - - 1 - - 10 VGS = ±20V, VDS = 0V - - ±10 2.5 - 3.5 V - 0.82 0.90 Ω - 4.6 - S μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 2.3A VDS = 20V, ID = 2.3A (Note 4) Dynamic Characteristics - 534 710 pF - 399 530 pF - 19.7 30 pF - 11.1 - pF VDS = 0V to 480V, VGS = 0V - 48.6 - pF - 13.1 17 nC VDS = 380V, ID = 2.3A VGS = 10V - 2.2 - nC - 4.5 - nC - 2.4 - Ω - 10.9 32 ns - 5.3 21 ns - 33.6 77 ns - 11.9 34 ns Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1.0MHz Coss eff. Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25V, VGS = 0V f = 1MHz (Note 4) Drain open Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 2.3A VGS = 10V, RG = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 13.5 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 2.3A - - 1.2 V trr Reverse Recovery Time - 156 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 2.3A dIF/dt = 100A/μs - 1.3 - nC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 2.3A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature FCU900N60Z Rev. C0 2 www.fairchildsemi.com FCU900N60Z 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 20 VGS = 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V *Notes: 1. VDS = 20V 2. 250μs Pulse Test 10 ID, Drain Current[A] ID, Drain Current[A] 10 1 o 25 C o 150 C o -55 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 0.2 1 10 VDS, Drain-Source Voltage[V] 2 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] 50 1.6 1.2 VGS = 10V VGS = 20V 0.8 o 150 C 10 o 25 C 1 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.4 0 3 6 9 ID, Drain Current [A] 0.1 0.4 12 Figure 5. Capacitance Characteristics 1.6 10 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 Ciss 100 Coss 10 *Note: 1. VGS = 0V 2. f = 1MHz 1 0.5 0.1 FCU900N60Z Rev. C0 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.0 RDS(ON) [Ω], Drain-Source On-Resistance 4 6 VGS, Gate-Source Voltage[V] Crss 1 10 100 VDS, Drain-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 2.3A 0 600 0 3 3 6 9 12 Qg, Total Gate Charge [nC] 15 www.fairchildsemi.com FCU900N60Z 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 1mA 0.90 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 2.3A 0.5 -80 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current 20 5 10μs 4 ID, Drain Current [A] ID, Drain Current [A] 10 100μs 1 1ms 10ms DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o VGS = 10V 3 2 1 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] o RθJC = 1.5 C/W 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 2.8 2.4 EOSS, [μJ] 2.0 1.6 1.2 0.8 0.4 0.0 0 FCU900N60Z Rev. C0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 4 www.fairchildsemi.com FCU900N60Z 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCU900N60Z 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 3 0.5 1 0.2 t1 t2 0.05 0.02 0.01 Single pulse 0.1 -5 10 FCU900N60Z Rev. C0 PDM 0.1 *Notes: o 1. ZθJC(t) = 2.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 0 10 www.fairchildsemi.com FCU900N60Z 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCU900N60Z Rev. C0 6 www.fairchildsemi.com FCU900N60Z 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FCU900N60Z Rev. C0 7 www.fairchildsemi.com FCU900N60Z 600V N-Channel MOSFET Mechanical Dimensions Dimensions in Millimeters FCU900N60Z Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FCU900N60Z Rev. C0 9 www.fairchildsemi.com FCU900N60Z 600V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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