FAIRCHILD FCU900N60Z

SuperFET® II
FCU900N60Z
600V N-Channel MOSFET
Features
• 675V @TJ = 150oC
Description
• Max. RDS(on) = 900mΩ
SuperFET®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and lower
gate charge performance.
• Ultra Low Gate Charge (Typ. Qg = 13nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 49pF)
• 100% Avalanche Tested
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET®II is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
• ESD Improved Capacity
D
G
I-PAK
S
MOSFET Maximum Ratings TC =
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
25oC
unless otherwise noted*
Parameter
Rating
600
-DC
±20
-AC
(f>1Hz)
-Continuous (TC =
25oC)
±30
4.5
Units
V
V
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
1
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.52
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
-Continuous (TC = 100oC)
- Pulsed
MOSFET dv/dt
(TC =
25oC)
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Derate above 25oC
A
(Note 1)
13.5
A
(Note 2)
47.5
mJ
20
100
PD
TL
2.8
V/ns
52
W
0.42
W/oC
-55 to +150
oC
300
oC
Rating
Units
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
2.4
RθJA
Thermal Resistance, Junction to Ambient
100
©2012 Fairchild Semiconductor Corporation
FCU900N60Z Rev. C0
1
oC/W
www.fairchildsemi.com
FCU900N60Z 600V N-Channel MOSFET
August 2012
Device Marking
FCU900N60Z
Device
FCU900N60Z
Package
I-PAK
Reel Size
-
Tape Width
-
Quantity
75
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
ID = 1mA, VGS = 0V, TJ = 25oC
625
-
-
V
ID = 1mA, VGS = 0V, TJ = 150oC
675
-
-
V
-
0.72
-
V/oC
-
700
-
V
μA
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
ΔTJ
BVDS
Breakdown Voltage Temperature
ID = 1mA, Referenced to 25oC
Coefficient
Drain to Source Avalanche Breakdown
VGS = 0V, ID = 4.5A
Voltage
VDS = 600V, VGS = 0V
Zero Gate Voltage Drain Current
VDS = 600V, TC = 125oC
IDSS
Gate to Body Leakage Current
IGSS
-
-
1
-
-
10
VGS = ±20V, VDS = 0V
-
-
±10
2.5
-
3.5
V
-
0.82
0.90
Ω
-
4.6
-
S
μA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 2.3A
VDS = 20V, ID = 2.3A
(Note 4)
Dynamic Characteristics
-
534
710
pF
-
399
530
pF
-
19.7
30
pF
-
11.1
-
pF
VDS = 0V to 480V, VGS = 0V
-
48.6
-
pF
-
13.1
17
nC
VDS = 380V, ID = 2.3A
VGS = 10V
-
2.2
-
nC
-
4.5
-
nC
-
2.4
-
Ω
-
10.9
32
ns
-
5.3
21
ns
-
33.6
77
ns
-
11.9
34
ns
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380V, VGS = 0V, f = 1.0MHz
Coss eff.
Effective Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 25V, VGS = 0V
f = 1MHz
(Note 4)
Drain open
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380V, ID = 2.3A
VGS = 10V, RG = 4.7Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
4.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
13.5
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 2.3A
-
-
1.2
V
trr
Reverse Recovery Time
-
156
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 2.3A
dIF/dt = 100A/μs
-
1.3
-
nC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 1.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 2.3A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature
FCU900N60Z Rev. C0
2
www.fairchildsemi.com
FCU900N60Z 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
20
VGS = 10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
10
ID, Drain Current[A]
ID, Drain Current[A]
10
1
o
25 C
o
150 C
o
-55 C
1
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
0.1
0.1
0.2
1
10
VDS, Drain-Source Voltage[V]
2
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
IS, Reverse Drain Current [A]
50
1.6
1.2
VGS = 10V
VGS = 20V
0.8
o
150 C
10
o
25 C
1
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
0.4
0
3
6
9
ID, Drain Current [A]
0.1
0.4
12
Figure 5. Capacitance Characteristics
1.6
10
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
Ciss
100
Coss
10
*Note:
1. VGS = 0V
2. f = 1MHz
1
0.5
0.1
FCU900N60Z Rev. C0
2. 250μs Pulse Test
0.8
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10000
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.0
RDS(ON) [Ω],
Drain-Source On-Resistance
4
6
VGS, Gate-Source Voltage[V]
Crss
1
10
100
VDS, Drain-Source Voltage [V]
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
*Note: ID = 2.3A
0
600
0
3
3
6
9
12
Qg, Total Gate Charge [nC]
15
www.fairchildsemi.com
FCU900N60Z 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.15
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 1mA
0.90
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 2.3A
0.5
-80
160
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
160
Figure 10. Maximum Drain Current
20
5
10μs
4
ID, Drain Current [A]
ID, Drain Current [A]
10
100μs
1
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
o
VGS = 10V
3
2
1
1. TC = 25 C
o
0.01
0.1
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
o
RθJC = 1.5 C/W
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Eoss vs. Drain to Source Voltage
2.8
2.4
EOSS, [μJ]
2.0
1.6
1.2
0.8
0.4
0.0
0
FCU900N60Z Rev. C0
100
200
300
400
500
VDS, Drain to Source Voltage [V]
600
4
www.fairchildsemi.com
FCU900N60Z 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCU900N60Z 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
Thermal Response [ZθJC]
3
0.5
1
0.2
t1
t2
0.05
0.02
0.01
Single pulse
0.1
-5
10
FCU900N60Z Rev. C0
PDM
0.1
*Notes:
o
1. ZθJC(t) = 2.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
5
-1
10
0
10
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FCU900N60Z 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCU900N60Z Rev. C0
6
www.fairchildsemi.com
FCU900N60Z 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FCU900N60Z Rev. C0
7
www.fairchildsemi.com
FCU900N60Z 600V N-Channel MOSFET
Mechanical Dimensions
Dimensions in Millimeters
FCU900N60Z Rev. C0
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FCU900N60Z Rev. C0
9
www.fairchildsemi.com
FCU900N60Z 600V N-Channel MOSFET
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