ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 4 V Collector Current IC 100 mA Emitter Current IE -100 mA Ptot 400 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 2SC3190 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group R hFE 40 - 80 - O hFE 70 - 140 - Y hFE 120 - 240 - ICBO - - 0.1 μA IEBO - - 1 μA VCE(sat) - - 0.4 V VBE(sat) - - 1 V fT 80 120 - MHz Cre - 2.2 3 pF Cc,rbb - 30 50 ps NF - 2 3.5 dB DC Current Gain at VCE=12V, IC=2mA Collector Cutoff Current at VCB=20V Emitter Cutoff Current at VEB=2V Collector Saturation Voltage at IC=10mA, IB=1mA Base Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=10V, IC=2mA Reverse Transfer Capacitance at VCE=10V, f=1MHz Collector Base Time Constant at VCE=10V, IE=-1mA, f=30MHz Noise Figure at VCE=10V, f=1MHz, IE=-1mA, Rg=50ς SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002